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    Untitled

    Abstract: No abstract text available
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    Original     		PDF M48T513Y M48T513V M48T513Y: M48T513V:

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A

    TSOP32 FOOTPRINT

    Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
    Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave


    Original     		PDF NL-5652 FLNVRAM/1000 TSOP32 FOOTPRINT NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V

    asm eagle

    Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
    Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:


    Original     		PDF BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860

    m48t35

    Abstract: NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V
    Text: ZEROPOWER and TIMEKEEPER NVRAMs BATTERY-BACKED SRAMS, OPTIONAL CLOCK/CALENDAR ZEROPOWER products integrate low power SRAMs with a powerfail control circuit and a long-life lithium battery. The power-fail circuit monitors the external power supply voltage. If this falls below


    Original     		PDF programmable33-3) FLZERO/1198 286-CJ103 m48t35 NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V

    M48Z2M1

    Abstract: M48Z2M1Y a20 Schottky diode st
    Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y PMLDIP36 M48Z2M1: M48Z2M1Y: M48Z2M1/2M1Y M48Z2M1 M48Z2M1Y a20 Schottky diode st

    M48T201

    Abstract: M48T513V M48T513Y
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    Original     		PDF M48T513Y M48T513V M48T513Y: M48T513V: M48T201 M48T513V M48T513Y

    Untitled

    Abstract: No abstract text available
    Text: M48T513Y M48T513V 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and


    Original     		PDF M48T513Y M48T513V 512Kb M48T513Y: M48T513V: PMLDIP36

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: M48Z2M1 M48Z2M1Y 16 Mb 2Mb x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y M48Z2M1: M48Z2M1Y: M48Z2M1/2M1Y A0-A20 PMLDIP36 M48Z2M1 M48Z2M1Y

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


    Original     		PDF operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi

    M48T201

    Abstract: M48T513V M48T513Y Backup output protect 36Pin-DIP
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    Original     		PDF M48T513Y M48T513V M48T513Y: M48T513V: AI02307 A0-A18 M48T513Y) M48T513V) PMLDIP36 M48T201 M48T513V M48T513Y Backup output protect 36Pin-DIP

    PJ 1179

    Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
    Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a


    Original     		PDF

    M48T201

    Abstract: M48T513V M48T513Y
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    Original     		PDF M48T513Y M48T513V M48T513Y: M48T513V: AI02307 A0-A18 M48T513Y) M48T513V) PMLDIP36 M48T201 M48T513V M48T513Y

    M48Z2M1

    Abstract: M48Z2M1Y a20 Schottky diode st
    Text: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y PMLDIP36 M48Z2M1: M48Z2M1Y: M48Z2M1/2M1Y M48Z2M1 M48Z2M1Y a20 Schottky diode st

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: M48Z2M1 M48Z2M1Y 16 Mb 2Mb x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z2M1 M48Z2M1Y M48Z2M1: M48Z2M1Y: PMLDIP36 M48Z2M1/2M1Y M48Z2M1 M48Z2M1Y

    TAG 9109

    Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
    Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in


    Original     		PDF 286-CJ103 TAG 9109 M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16 Mb 2Mb x 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y 48Z2M M48Z2M1Y LDIP36 M48Z2M1/2M1Y 204ce, M48Z2M1, PMLDIP36-

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: w , M48Z2M1 M 48Z 2M 1Y S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 16 Mb 2Mb X 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y M48Z2M1: M48Z2M1Y 2048K M48Z2M1, PMLDIP36 PMLDIP36

    Untitled

    Abstract: No abstract text available
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ YEAR 2000 COMPLIANT-CENTURY REGISTER ■ BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		PDF M48T513Y M48T513V PMLDIP36 48T513Y: 48T513V: iM48T513Y) M48T513Y, PMLDIP36

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y SGS-THOMSON 16 Mb 2Mb x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y 48Z2M 48Z2M1/2M1Y 2048K 152words

    2A183

    Abstract: No abstract text available
    Text: M48T513Y M48T513V nZ J SG S-T H O M SO N 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL » YEAR 2000 COMPLIANT-CENTU RY REGISTER « BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		PDF M48T513Y M48T513V M48T513Y: M48T513V: AI02307 M48T513Y) M48T513V) PMLDIP36 A0-A18 M48T513Y, 2A183

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y SCS-THOMSON 16 Mb 2Mb x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y M48Z2M1 M48Z2M1Y: M48Z2M1/2M1Y M48Z2M1, PMLDIP36

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y S G S -T H O M S O N n i ii5 in i * r a ( § s 16 Mb (2Mb x 8 ZEROPOWER® SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y LDIP36 M48Z2M1Y: M48Z2M1/2M1Y

    M48Z2M1

    Abstract: M48Z2M1Y
    Text: M48Z2M1 M 48Z 2M 1Y k7 #» RitlDÊlMIlilLIKËinSMQtÊS w , S G S -T H O M S O N 16 Mb 2Mb x 8 ZER O PO W ER SRAM P R E L IM IN A R Y D A TA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES


    OCR Scan     		PDF M48Z2M1 M48Z2M1Y M48Z2M1 M48Z2M1Y 2048K 152words M48Z2M1, PMLDIP36