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    RF AMPLIFIER MARKING A04 Search Results

    RF AMPLIFIER MARKING A04 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    RF AMPLIFIER MARKING A04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A09 N03 MOSFET

    Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
    Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04


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    PDF AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190


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    PDF AF190 2002/95/EC)

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190


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    PDF AF190 2002/95/EC)

    MAR-4

    Abstract: mmic mar-4 MAR4
    Text: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629


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    PDF MSA-0485 VV105 2002/95/EC) C/85RH MAR-4 mmic mar-4 MAR4

    marking A04

    Abstract: A04 monolithic amplifier AF190 ram-4 RF AMPLIFIER marking A04 MMIC Amplifier A04
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190


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    PDF AF190 2002/95/EC) marking A04 A04 monolithic amplifier AF190 ram-4 RF AMPLIFIER marking A04 MMIC Amplifier A04

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629


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    PDF AF190 2002/95/EC)

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629


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    PDF AF190

    A04 monolithic amplifier

    Abstract: marking A04 RF AMPLIFIER marking A04 monolithic amplifier A04 AF190 MMIC Amplifier A04 ram-4 A04 RF amplifier
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190


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    PDF AF190 2002/95/EC) A04 monolithic amplifier marking A04 RF AMPLIFIER marking A04 monolithic amplifier A04 AF190 MMIC Amplifier A04 ram-4 A04 RF amplifier

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629


    Original
    PDF AF190

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629


    Original
    PDF AF190

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629


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    PDF AF190

    MMIC MAR-4

    Abstract: A04 monolithic amplifier MAR-4SM MMIC marking A04 monolithic amplifier MAR MAR-4SM MSA-0485 VV105 WW107 MAR-4
    Text: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629


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    PDF MSA-0485 VV105 2002/95/EC) MMIC MAR-4 A04 monolithic amplifier MAR-4SM MMIC marking A04 monolithic amplifier MAR MAR-4SM MSA-0485 VV105 WW107 MAR-4

    MRF9030NR1

    Abstract: marking z17 100B470JP
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


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    PDF MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP

    MRF9060L

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


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    PDF MRF9060LR1 MRF9060LSR1 MRF9060L

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


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    PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1

    93F2975

    Abstract: 865 marking amplifier MRF9120LR3
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


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    PDF MRF9120R3 MRF9120LR3 93F2975 865 marking amplifier

    VIPer 32

    Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


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    PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1 VIPer 32 MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 marking z17

    MRF9060MR1

    Abstract: 93F2975
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


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    PDF MRF9060MR1 MRF9060MBR1 93F2975

    MRF9030N

    Abstract: wb1 99 MRF9030NBR1 A113 MRF9030NR1 marking wb2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030NR1 MRF9030NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


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    PDF MRF9030N MRF9030NR1 MRF9030NBR1 MRF9030NR1 MRF9030N wb1 99 MRF9030NBR1 A113 marking wb2

    93F2975

    Abstract: marking 865 amplifier 100B120JP 865 marking amplifier
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


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    PDF MRF9135LR3 MRF9135LSR3 93F2975 marking 865 amplifier 100B120JP 865 marking amplifier

    TO-270-2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


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    PDF MRF9030M MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 TO-270-2

    100B270JP500X

    Abstract: NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


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    PDF MRF9210R3 100B270JP500X NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier

    MARKING WB1

    Abstract: 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060 MRF9060LSR1 MRF9060S T491D106K035AT
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9060LSR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


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    PDF MRF9060LSR1 MRF9060 MARKING WB1 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060LSR1 MRF9060S T491D106K035AT

    MARKING WB1

    Abstract: ATC100B0R5BT500XT ATC100B470JT500XT MRF9060 MRF9060LR1 MRF9060S T491D106K035AT
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


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    PDF MRF9060 MRF9060LR1 MARKING WB1 ATC100B0R5BT500XT ATC100B470JT500XT MRF9060LR1 MRF9060S T491D106K035AT