A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190
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AF190
2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190
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AF190
2002/95/EC)
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MAR-4
Abstract: mmic mar-4 MAR4
Text: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629
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MSA-0485
VV105
2002/95/EC)
C/85RH
MAR-4
mmic mar-4
MAR4
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marking A04
Abstract: A04 monolithic amplifier AF190 ram-4 RF AMPLIFIER marking A04 MMIC Amplifier A04
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190
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AF190
2002/95/EC)
marking A04
A04 monolithic amplifier
AF190
ram-4
RF AMPLIFIER marking A04
MMIC Amplifier A04
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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AF190
2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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AF190
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A04 monolithic amplifier
Abstract: marking A04 RF AMPLIFIER marking A04 monolithic amplifier A04 AF190 MMIC Amplifier A04 ram-4 A04 RF amplifier
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-4+ CASE STYLE: AF190
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AF190
2002/95/EC)
A04 monolithic amplifier
marking A04
RF AMPLIFIER marking A04
monolithic amplifier A04
AF190
MMIC Amplifier A04
ram-4
A04 RF amplifier
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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AF190
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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AF190
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Untitled
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • Cascadable ceramic package • Internally Matched to 50 Ohms • Low noise figure, 6.5 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629
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AF190
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MMIC MAR-4
Abstract: A04 monolithic amplifier MAR-4SM MMIC marking A04 monolithic amplifier MAR MAR-4SM MSA-0485 VV105 WW107 MAR-4
Text: Drop-In Monolithic Amplifier DC-1 GHz Product Features • Wideband, DC to 1 GHz • High IP3, 25.5 dBm typ. • Low noise figure, 7.0 dB typ. • Exact foot print substitute for MSA-0485 • Cascadable, unconditionally stable • Aqueous washable • Protected by US Patent 6,943,629
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MSA-0485
VV105
2002/95/EC)
MMIC MAR-4
A04 monolithic amplifier
MAR-4SM MMIC
marking A04
monolithic amplifier MAR
MAR-4SM
MSA-0485
VV105
WW107
MAR-4
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MRF9030NR1
Abstract: marking z17 100B470JP
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9030MBR1)
MRF9030NR1
MRF9030MR1
MRF9030MBR1
marking z17
100B470JP
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MRF9060L
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9060LR1
MRF9060LSR1
MRF9060L
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors
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MRF9030NR1/NBR1.
MRF9030M
MRF9030MR1
MRF9030MBR1
MRF9030MR1
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93F2975
Abstract: 865 marking amplifier MRF9120LR3
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these
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MRF9120R3
MRF9120LR3
93F2975
865 marking amplifier
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VIPer 32
Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors
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MRF9030NR1/NBR1.
MRF9030M
MRF9030MR1
MRF9030MBR1
MRF9030MR1
VIPer 32
MARKING WB1
viper gate control circuits
MRF9030M
VIPER 300 series
A113
MRF9030MBR1
marking z17
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MRF9060MR1
Abstract: 93F2975
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9060MR1
MRF9060MBR1
93F2975
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MRF9030N
Abstract: wb1 99 MRF9030NBR1 A113 MRF9030NR1 marking wb2
Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030NR1 MRF9030NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9030N
MRF9030NR1
MRF9030NBR1
MRF9030NR1
MRF9030N
wb1 99
MRF9030NBR1
A113
marking wb2
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93F2975
Abstract: marking 865 amplifier 100B120JP 865 marking amplifier
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135LR3
MRF9135LSR3
93F2975
marking 865 amplifier
100B120JP
865 marking amplifier
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TO-270-2
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9030M
MRF9030NR1
MRF9030NBR1
MRF9030MR1
MRF9030MBR1
TO-270-2
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100B270JP500X
Abstract: NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier
Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9210R3
100B270JP500X
NIPPON CAPACITORS
MRF9210
DS0978
TRANSISTOR J408
865 marking amplifier
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MARKING WB1
Abstract: 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060 MRF9060LSR1 MRF9060S T491D106K035AT
Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9060LSR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
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MRF9060LSR1
MRF9060
MARKING WB1
945 mosfet n
945 TRANSISTOR
marking us capacitor pf l1
marking Z4
ATC100B470JT500XT
MRF9060LSR1
MRF9060S
T491D106K035AT
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MARKING WB1
Abstract: ATC100B0R5BT500XT ATC100B470JT500XT MRF9060 MRF9060LR1 MRF9060S T491D106K035AT
Text: Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
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MRF9060
MRF9060LR1
MARKING WB1
ATC100B0R5BT500XT
ATC100B470JT500XT
MRF9060LR1
MRF9060S
T491D106K035AT
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