MARKING W3 SOT23 TRANSISTOR
Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
MARKING W3 SOT23 TRANSISTOR
rf transistor mark code H1
transistor marking code ne SOT-23
marking code w2 sot23
pnp rf transistor
sot23 Transistor marking p2
sot-23 Marking 3D
marking 3d sot-23
Marking code mps
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Untitled
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
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CBVK741B019
Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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MPSH20
MMBTH20
MPSH20
OT-23
CBVK741B019
F63TNR
MMBTH20
PN2222N
Q100
transistor mark code t1
Ohmite RF
Z-235
MPS-H20
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transistor j210
Abstract: 212 t sot-23
Text: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from
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MMBFJ210
MMBFJ211
MMBFJ212
OT-23
transistor j210
212 t sot-23
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212 s sot-23
Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
Text: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient
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MMBFJ211
MMBFJ212
MMBFJ211
OT-23
212 s sot-23
62w sot-23
rf transistor mark code H1
212 t sot-23
J212
J211 TOP
CBVK741B019
F63TNR
J211
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MPSH10 fairchild transistor
Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
MPSH10 fairchild transistor
MMBTH10 Spice Model
transistor top mark 3E L
transistor bel 100
CBVK741B019
F63TNR
MMBTH10
PN2222N
TRANSISTOR C 3223
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CBVK741B019
Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
CBVK741B019
F63TNR
MMBTH10
PN2222N
PAP transistor power high frequency
transistor bel 100
rf transistor mark code H1
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Untitled
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
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CBVK741B019
Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
CBVK741B019
F63TNR
MMBT918
PN2222N
RF 107
transistor tc 144
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mmbt918
Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
mmbt918
Intermediate frequency Semiconductor RF
CBVK741B019
F63TNR
PN2222N
npn transistor wc
14inch
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MPSH10 s parameters
Abstract: No abstract text available
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
MPSH10 s parameters
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nk90
Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
nk90
mje321
BF-133
CBVK741B019
F63TNR
MMBTH81
PN2222N
pnp rf transistor
Bf133
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
D3000
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CBVK741B019
Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
transistor 26
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Untitled
Abstract: No abstract text available
Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency
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PN5179
MMBT5179
OT-23
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Transistor J310
Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
Text: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
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MMBFJ309
MMBFJ310
OT-23
Transistor J310
J309
J310
J310 applications
CBVK741B019
F63TNR
MMBFJ309
MMBFJ310
PN2222N
J310 Application Note
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PN5179
Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency
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PN5179
MMBT5179
OT-23
PN5179
CBVK741B019
F63TNR
MMBT5179
MPS5179
PN2222N
TRANSISTOR C 3223
MJC2
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Untitled
Abstract: No abstract text available
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
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6u sot-23
Abstract: j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 MMBFJ309
Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and
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MMBFJ309
MMBFJ310
MMBFJ309
OT-23
6u sot-23
j310 equivalent
1175 yig oscillator
J309 application note
rf transistor mark code H1
CBVK741B019
F63TNR
J309
J310
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6u sot-23
Abstract: J309 CBVK741B019 F63TNR J310 MMBFJ309 MMBFJ310 PN2222N J309-J310 UA309
Text: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and
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MMBFJ309
MMBFJ310
MMBFJ309
OT-23
6u sot-23
J309
CBVK741B019
F63TNR
J310
MMBFJ310
PN2222N
J309-J310
UA309
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mpsh81 model
Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
mpsh81 model
MMBTH81
CBVK741B019
F63TNR
PN2222N
NE-21
BF-133
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH24
MPSH11
PN2222N
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CBVK741B019
Abstract: F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
CBVK741B019
F63TNR
MMBTH24
MPSH11
PN2222N
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erf5e
Abstract: ERF10E ERF2E
Text: Wirewound Resistors Thin Type Wirewound Resistors (Thin Type) Type: ERF2E, 3E, 5E, 10E (2 W, 3 W, 5 W, 10 W) These low inductance and non-flammable resistors have been developed for the applications such as protection of output transistor in AV equipment and current detection of switching power supply.
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