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    RJK6015DPM Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK6015DPM-00#T1 Renesas Electronics Corporation Nch Single Power Mosfet 600V 21A 360Mohm To-3Pfm Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RJK6015DPM-00-T1

    MOSFET N-CH 600V 21A TO3PFM
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    RJK6015DPM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK6015DPM Renesas Technology MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : -; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff ( us) typ: -; Package: TO-3PFM Original PDF
    RJK6015DPM-00#T1 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO3PFM Original PDF

    RJK6015DPM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    to3pfm

    Abstract: PRSS0003ZA-A RJK6015DPM RJK6015DPM-00-T1
    Text: RJK6015DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G1752-0100 Rev.1.00 Nov 13, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM D 1. Gate


    Original     		PDF RJK6015DPM REJ03G1752-0100 PRSS0003ZA-A to3pfm PRSS0003ZA-A RJK6015DPM RJK6015DPM-00-T1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6015DPM R07DS0438EJ0200 Previous: REJ03G1752-0100 Rev.2.00 Jun 21, 2012 600V - 21A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.315  typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current


    Original     		PDF RJK6015DPM R07DS0438EJ0200 REJ03G1752-0100) PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6015DPM R07DS0438EJ0200 Previous: REJ03G1752-0100 Rev.2.00 Jun 21, 2012 600V - 21A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.315  typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current


    Original     		PDF RJK6015DPM R07DS0438EJ0200 REJ03G1752-0100) PRSS0003ZA-A

    RJK6015DPM

    Abstract: RJK6015DPM-00-T1 PRSS0003ZA-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK