Untitled
Abstract: No abstract text available
Text: 3DE P • 7^ 5 3 7 OQgqflqi S G S -T H O M S O N I Li(g?GMO(gS 4 ■ n _ r 3 <ì - i S s~ T ì ^ hoMSo n — SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • VDSS 500 V ^DS(on 0.20 ß 30 A ISOLATED POWERMOS MODULE
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SGS30MA050D1
A050D1
7SB1B37
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Untitled
Abstract: No abstract text available
Text: r= 7 S C S -T H O M S O N M « I[L [I * ( M Û ( g S SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • ^DSS 500 V ^DS(on 0.20 0 *D 30 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE
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SGS30MA050D1
A050D1
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SGS30MA050D1
Abstract: No abstract text available
Text: SGS-THOMSON ^ 7 # M g[M i[L[I(gra(Q)Rl(gS SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS(on) SGS30MA050D1 500 V 0.20 • • • • • U 30 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL
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SGS30MA050D1
SC-0162
SGS30MA050D1
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ISOWATT220
Abstract: No abstract text available
Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30
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O-220
ISOWATT220
ISOWATT22Q
STH107N50
STH10N50
STHI10N50
STHI10N50FI
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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P-220
ISOWATT220
O-220
O-220
STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
sgs*P381
ISOWATT218 IGBT
STLT20
MTP3055AFI
SGSP381
IRFP453FI
SGSP579
SGSP591
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BUV48 SE
Abstract: SGSD00036 kkz 10
Text: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous
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SGS30MA050D1
250fi
SGS30M
SGS40TA045D:
SGS400T045D
O-24Q
BUV48 SE
SGSD00036
kkz 10
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kkz 10
Abstract: BUV48
Text: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO WER MOS will, in many applications, gradually re place power bipolar devices due to the numerous
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SGS30MA050D1
SGS40TA045D:
S400T045D
kkz 10
BUV48
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TSD4M450V
Abstract: TSD4M250V IRF740 smd Isotop SGS100MA010D1 SGSP363 TSD4M150V IRF621 IRF621FI IRF622
Text: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100
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IRFP150
IRFP150FI
SGS100MA010D1
TSD4M150V
SGS150MA010D1
IRF623
IRF623FI
IRF621
IRF621FI
IRF622
TSD4M450V
TSD4M250V
IRF740 smd
Isotop
SGSP363
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ISOWATT220
Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00
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STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
O-220
ISOWATT22Û
ISOWATT22Q
ISOWATT220
MTP3055AFI
IRF722FI
IRFP453FI
SGSP579
SGSP591
SGS35MA050D1
SGSP382
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sgs*P381
Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
ISS 355
IRFp150 To3 package
IRFP350FI
MTP3055AFI
SGSP591
SGSP239
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TSD4M450V
Abstract: TSD4M250V TSD4M350V TSD4M451V TSD5MG40V SGS100MA010D1 TSD4M351V TSD4M150V SGS30MA050D1 ISOTOP
Text: Æ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL Ä 7# KitlO [S©IlLi©ra©öiflO Si POWER MODULES ISOTOP: Faston version ISOTOP Standard version TO 240 Internal schematic diagram -+*- 2 3 -O O - 60 POWER MOS IN TO 240 > Type Ip V(BR DSS r DS (on) max (V) (0)
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SGS100MA010D1
SGS150MA010D1
SGS30MA050D1
SGS35MA050D1
TSD4M150V
TSD4M250V
TSD4M351V
TSD4M450V
TSD4M350V
TSD4M451V
TSD5MG40V
ISOTOP
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irfp 950
Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6
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SGS35MA050D1
TSD4M450V
MTP3N60
MTP3N60FI
MTH6N60FI
MTP6N60
STHV82
STHV102
TSD5MG40V
STHI07N50FI
irfp 950
SGSP479
transistor BUZ45
SGSP369
BUZ74
IRFP 740
IRF 950
SGSP239
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ISOWATT-220
Abstract: mtp15n05 BU210A ISOWATT220
Text: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00
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O-220
ISOWATT220
ISOWATT220
STH107N50
STH10N50
STHI10N50
STHI10N50FI
ISOWATT-220
mtp15n05
BU210A
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sgs*P381
Abstract: IRFp150 To3 package bu245a BR 1300
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
IRFp150 To3 package
bu245a
BR 1300
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TSD4M450V
Abstract: SGSP479 SGSP239 tsd4m45 IRF840FI SGSP369 SGSP474 STHV82 TSD4M250V TSD4M351V
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS V BR DSS RDS(on) max (V) <n> 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500
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IRF831
IRF831FI
SGSP364
IRF843
IRF843FI
IRF841
IRF841FI
SGSP474
SGSP574
IRF453
TSD4M450V
SGSP479
SGSP239
tsd4m45
IRF840FI
SGSP369
STHV82
TSD4M250V
TSD4M351V
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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