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    SI8424 Price and Stock

    Vishay Siliconix SI8424CDB-T1-E1

    MOSFET N-CH 8V 4MICROFOOT
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    DigiKey SI8424CDB-T1-E1 Digi-Reel 1,980 1
    • 1 $0.68
    • 10 $0.453
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    • 1000 $0.2222
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    SI8424CDB-T1-E1 Cut Tape 1,980 1
    • 1 $0.68
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    SI8424CDB-T1-E1 Reel 3,000
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    Skyworks Solutions Inc SI8424BB-D-IS

    LINEAR IC'S
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    DigiKey SI8424BB-D-IS Tube 96
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    Mouser Electronics SI8424BB-D-IS
    • 1 $3.35
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    Richardson RFPD SI8424BB-D-IS 1
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    Skyworks Solutions Inc SI8424AB-D-IS

    LINEAR IC'S
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    DigiKey SI8424AB-D-IS Tube 96
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    Mouser Electronics SI8424AB-D-IS
    • 1 $2.6
    • 10 $1.88
    • 100 $1.87
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    Richardson RFPD SI8424AB-D-IS 1
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    Vishay Siliconix SI8424DB-T1-E1

    MOSFET N-CH 8V 12.2A 4MICROFOOT
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    DigiKey SI8424DB-T1-E1 Reel
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    SI8424DB-T1-E1 Digi-Reel 1
    • 1 $1
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    Skyworks Solutions Inc SI8424BB-D-ISR

    LINEAR IC'S
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    DigiKey SI8424BB-D-ISR Reel 2,500
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    Mouser Electronics SI8424BB-D-ISR
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    Richardson RFPD SI8424BB-D-ISR 1
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    Find more SI8424 price and stock on Findchips.com

    SI8424 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8424CDB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V MICROFOOT Original PDF
    SI8424DB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V 12.2A 2X2 4-MFP Original PDF

    SI8424 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


    Original     		PDF Si8424DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8424DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8424DB 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 VDS (V) 8


    Original     		PDF Si8424CDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8424CDB AN609, 1164m 2215m 1109m 5687m 7434m 7950m 28-Sep-12

    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 ID (A)a, e RDS(on) () Max. 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 Qg (Typ.) 25 nC


    Original     		PDF Si8424CDB 8424C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    62030

    Abstract: SI8424 Si8424DB marking 8424
    Text: Si8424DB Vishay Siliconix New Product N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ)


    Original     		PDF Si8424DB 08-Apr-05 62030 SI8424 marking 8424

    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 ID (A)a, e RDS(on) () Max. 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 Qg (Typ.) 25 nC


    Original     		PDF Si8424CDB 8424C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8424CDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8424CDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


    Original     		PDF Si8424DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8424DB

    Abstract: 8942 AN609
    Text: Si8424DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8424DB AN609 22-Aug-07 8942

    TR 610

    Abstract: Si8424DB si8424
    Text: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


    Original     		PDF Si8424DB 18-Jul-08 TR 610 si8424

    Untitled

    Abstract: No abstract text available
    Text: Si8424DB Vishay Siliconix N-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 8 ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 Qg (Typ.) 20 nC


    Original     		PDF Si8424DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


    Original     		PDF Si8424DB 11-Mar-11

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    LCD Iphone 3G

    Abstract: cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g
    Text: Industry News: Breaking News in the Industry and around the World MEMORY Interfaces WIRELESS COMMUNICATIONS: Ultra-wideband CONSUMER ELECTRONICS: HANDHELD GAMING DEVICES PORTABLE POWER: PARTITIONING for POWER Featured Product: Texas Instruments TMS320DM355


    Original     		PDF TMS320DM355 LLP-16 LP5551 LLP-36 LP5552 SMD-36 LCD Iphone 3G cd player amplifier double ic 4440 hynix lpddr2 Amphenol Connectors CATALOG iphone camera module Hynix Semiconductor lpddr2 samsung lpddr2 samsung* lpddr2 Rockchip lcd touchscreen iphone 3g

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		PDF SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SiB914

    Abstract: SiA427DJ si2329ds si8802
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS


    Original     		PDF SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    SiB431EDK

    Abstract: No abstract text available
    Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,


    Original     		PDF LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477