G9SX-BC202
Abstract: T11T12 T21T22 transistor s34 automatic 3 phase changer block diagram of plc s7 KM6 II preset switch G9SX-BC202-RT 6 channel relay to control robot plc wiring diagram s7 200
Text: Flexible Safety Unit G9SX Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. • Solid-state outputs excluding Expansion Units . • Detailed LED indications enable easy diagnosis. • TÜV Product Service certification for compliance
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Original
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IEC/EN61508
EN954-1
J150-E1-04
75-344-7093/Fax:
G9SX-BC202
T11T12 T21T22
transistor s34
automatic 3 phase changer
block diagram of plc s7
KM6 II
preset switch
G9SX-BC202-RT
6 channel relay to control robot
plc wiring diagram s7 200
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PDF
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Untitled
Abstract: No abstract text available
Text: BENCHMARÛ MICROELEC bflE D • 137001e] QOGIET? T33 HIBEN l3C|2012 Gas Gauge 1C Preliminary f e j BENCHMARQ Features General Description >- Conservative and repeatable measurement of available charge in rechargeable batteries The bq2012 Gas Gauge IC is in
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OCR Scan
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137001e
bq2012
bq2012
G0G1314
16-pin
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PDF
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15n50
Abstract: STH15N50 STW15N50 STH15N50FI ISOWATT218
Text: _71S1237 QG45T2fl T33 • S G T H STH15N50/FI STW15N50 SGS-THOMSON ilIO T « ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 STH15N50FI STW 15N50 . ■ . . ■ . V dss RDS on Id 500 V 500 V 500 V < 0.4 Î2 < 0.4 n < 0.4 fi 15 A 9 .3 A
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OCR Scan
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71S1237
QG45T2fl
STH15N50/FI
STW15N50
STH15N50
STH15N50FI
15N50
15N50
STH15N50/FI-STW15N50
STW15N50
ISOWATT218
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PDF
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dual tracking power supply
Abstract: CA3094T thermistor ntc 180m CA3094 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
Text: M3DES71 H A OGSSTTD R R T33 • H AS I S C * A S E M I C O N D U C T O R M 'I f i Q d M Programmable Power Switch/Amplifier for Control and General Purpose Applications April 1994 Features Description • • • • • The CA3094 is a differential input power control switch/
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OCR Scan
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M3DES71
CA3094T,
CA3094AT,
CA3094BT,
AN6048
AN6048.
CA3094
dual tracking power supply
CA3094T
thermistor ntc 180m
0MA810
AN6048
transistor 2sc 1014
P-8609
CA3080
CA3094A
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PDF
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2N3571
Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT32 BFT33 BFT34 BFT35 BFT36
Text: Discrete Semiconductors T e x a s In s t r u m e n t s Polarity High C u rren t A m p lifiers and S w itch es Device Type M axim um ratings Case BV BV BV CBO CEO EBO IC M Ic V V mA mA min. max. mA min. 30 30 30 30 30 30 V BFT32 hFE1 hFE 2 BF T33 BF T34 NPN
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OCR Scan
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BFT32
BFT33
BFT34
fBFT35
BFT35
BFT36
BFT37
Max50
2N3571
2N3570
2N4253
2N4252
2N3571 NPN
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PDF
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T0-202
Abstract: 045H5 d4104 T0202 D40C4 D40C7 d44c8 D41D5 D40C5 D40C1
Text: hfl E S L S G 1 1 3 D 0 0 3 ^ 5 3 ^ T33 NATL S E M I C O N D VcEO sutt (Volts) Min Device NPN PNP lc Cant (Am ps) Max I1« I g VcE(iat)® le Min M ax (Am ps) 60 180 0.02 (Volts) M ax (Am ps) h (D I S C R E T E ) P D (A m l» p O(Casa) MHz M in (Watts)
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OCR Scan
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D40N2
T0-202
D40C1
D40C4
D40C5
D40C7
045H5
d4104
T0202
D40C4
D40C7
d44c8
D41D5
D40C5
D40C1
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PDF
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2N1423
Abstract: 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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OCR Scan
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NPN110.
B170024
4000n
2N1423
2N5577
2N5579
MD38
1401-0207
MT1836
2SD223
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PDF
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BUV98
Abstract: BUV98A ATT25 BUV98AV BUV98V
Text: PHI L IP S I N T E R N A T I O N A L 4SE D El 711002b 0031127 O E2PHIN BUV98 V BUV98A(V) T-33-/3 SILIC O N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-current, high-speed transistors, assembled in the isolated ISO T O P package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.
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OCR Scan
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711002t,
BUV98
BUV98A
T-33-/3
OT227B
BUV98V
BUV98AV)
98AIV)
7ZB19IS
ATT25
BUV98AV
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PDF
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transistor LT5210
Abstract: LT5210 BSV20A NPN transistor Ic 50A td tr ts tf 2ns1110 10n60m BSX83 AC179 LT5202 AD165
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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OCR Scan
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NPN110.
B170024
4000n
transistor LT5210
LT5210
BSV20A
NPN transistor Ic 50A td tr ts tf
2ns1110
10n60m
BSX83
AC179
LT5202
AD165
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PDF
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RX1214B150W
Abstract: No abstract text available
Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
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OCR Scan
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bb53131
RX1214B150W
RX1214B150W
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PDF
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1401-1407
Abstract: 2N1423 MT1836 2SC1005 2N5577 2N5579 MD38 MT49 STC3741 2sc999
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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OCR Scan
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NPN110.
500kSA
MT14a
2SD222t
2SD223t
2SD224t
TRL2015
20MSA
TRL2255S
20M5A
1401-1407
2N1423
MT1836
2SC1005
2N5577
2N5579
MD38
MT49
STC3741
2sc999
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PDF
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2N725
Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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OCR Scan
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NPN110.
B170024
4000n
2N725
L51A
BSV20A
DM-58
2N625
BSX86
fr 153/30 r
T072
UC340
UC803
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PDF
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BD436 cross reference
Abstract: BD434 BD436-25 BD439 BD433 BD435 BD436 BD437 BD438 BD440
Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTE RNA TI ONA L DESCRIPTION SbE D • 7 1 1 G fl2 b O O M E T lb Ö T2 ■ P H IN QUICK REFERENCE DATA SYMBOL -VcES PINNING - TO-126 SOT32 “ VoEO DESCRIPTION
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OCR Scan
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D434/436/438/440/442
aTO-126
BD433,
BD435,
BD437,
BD439
BD441
O-126
711DflSb
BD434
BD436 cross reference
BD434
BD436-25
BD433
BD435
BD436
BD437
BD438
BD440
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PDF
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fa08a
Abstract: VS-2500 transistor 902 E113A FT45
Text: A E fi CORP 17E D OOETMSb OOGTM'i? 7 BU 902 ;iì3 iK s K e le c tro n ic CfeatveTechnotogtes Silicon NPN Power Transistor r - 3 S 'l3 A p p lio atio n : Sw itching mode power supply Features: • In triple diffusion technique • Short sw itching time • Glass passivation
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OCR Scan
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curreT-33-13
T-33-13
002TM2b
fa08a
VS-2500
transistor 902
E113A
FT45
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PDF
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10A 600 VOLT DIODE
Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
Text: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes
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OCR Scan
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72T4b21
T-33-35
KE724S0110
T-33-
KE72450110
10A 600 VOLT DIODE
transistor 13a 600v
westinghouse DIODES
827 d transistor
KE72
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PDF
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78m5
Abstract: mt59 PT2622
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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OCR Scan
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PDF
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KE724502
Abstract: DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72
Text: 7 2 9 4 6 2 1 POWERËX INC T Ë Ï>I"| 72=141.51 00QCH47 b | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E Inches 4.80 4.33 3.86 .236 .472 .213+ ¿°08 F G H I J K L M N O P .394 .709 .512 .276 1.02 1.5 1.18 .787 .315 .157 T-33-35 20 Amperes 450 Volts
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OCR Scan
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00QCH47
T-33-35
KE72450210
KE7245021Û
KE72450210
KE724502
DARLINGTON 20A
WESTINGHOUSE ELECTRIC
powerex cd
KE72
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PDF
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STC1015D
Abstract: 2n725 DTS104 L51A DTS103 DTS106 DTS108 DM-36 sdt2110 2n1422
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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OCR Scan
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NPN110.
B170024
4000n
STC1015D
2n725
DTS104
L51A
DTS103
DTS106
DTS108
DM-36
sdt2110
2n1422
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PDF
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TF80/30
Abstract: 2N1504 TF80/60 ZA24 Transistor 2N625 OD603 2SB84 2SB107 tf80-30 NS1110
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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OCR Scan
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NPN110.
B170024
4000n
TF80/30
2N1504
TF80/60
ZA24 Transistor
2N625
OD603
2SB84
2SB107
tf80-30
NS1110
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PDF
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K1502
Abstract: Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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OCR Scan
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NPN110.
B170024
4000n
K1502
Transistors 2n551
transistor k1502
BFX82
AN L61C
2N3113
RN1030
P1027
T03A
MT101B
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PDF
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RZ2833B45W
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E ObE D _1_L bbSB^l • 0015551 1 RZ2833B45W r- ss-is PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base ciass-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.
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OCR Scan
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100/us;
0015S55
RZ2833B45W
7Z24143
RZ2833B45W
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PDF
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vr182
Abstract: BDT29 BDT30 BDT30A BDT30B
Text: ri N AMER PH ILI P S/ DI SC RE T E- bbS3ia 1 O d l U b ? a • BDT30;A BDT30B;C SSE D J T-33-/7 SILICON EPITAXIAL BASE POWER TRANSISTORS -P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The T IP 3 0 series is an equivalent type
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OCR Scan
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BDT30
BDT30B
T-33-/7
BDT29
T-33-19
7Z82166
vr182
BDT30A
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PDF
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MM2102
Abstract: BSW30 ft06 310M 200S A190 A192 A193 A390 T072
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. I I M IN . I DERATE J to C W /C M A X Pc T 6 T T FREE I'A E I
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OCR Scan
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NPN110.
B170024
4000n
MM2102
BSW30
ft06
310M
200S
A190
A192
A193
A390
T072
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PDF
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t33b
Abstract: No abstract text available
Text: 45E D PHILIPS INTERN ATIONAL a 711002b 0D31DTS 2 E 3 PH IN BUV28F BUV28AF T-33M I SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 1 8 6 envelope w ith electrically isolated mounting base, intended fo r use in converters,' inverters, switching regulators, m otor control
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OCR Scan
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711002b
0D31DTS
BUV28F
BUV28AF
T-33M
t33b
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PDF
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