SI5461EDC
Abstract: No abstract text available
Text: SPICE Device Model Si5461EDC P-Channel 20-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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Si5461EDC
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Abstract: No abstract text available
Text: SPICE Device Model Si3407DV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si3407DV
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP85N03-3m6P Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SUP85N03-3m6P
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQD30N05-20L Vishay Siliconix N-Channel 55 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQD30N05-20L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si8483DB
Abstract: No abstract text available
Text: SPICE Device Model Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MSOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8483DB
11-Mar-11
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mos 6560
Abstract: diode M1
Text: SPICE Device Model SUM90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SUM90N08-4m8P
11-Mar-11
mos 6560
diode M1
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SUM90N04-3m3P
11-Mar-11
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si23
Abstract: No abstract text available
Text: SPICE Device Model Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si2324DS
11-Mar-11
si23
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA441DJ www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA441DJ
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8416DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8416DB
11-Mar-11
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SI4202DY
Abstract: No abstract text available
Text: SPICE Device Model Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4202DY
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR812DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR812DP
11-Mar-11
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SIR878ADP
Abstract: sir878
Text: SPICE Device Model SiR878ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR878ADP
11-Mar-11
sir878
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S-112-302
Abstract: SiA436DJ 63605
Text: SPICE Device Model SiA436DJ www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA436DJ
11-Mar-11
S-112-302
63605
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si3437DV www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si3437DV
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SQ4840EY
Abstract: No abstract text available
Text: SPICE Device Model SQ4840EY Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQ4840EY
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQ4840EY
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63635
Abstract: Si8487DB
Text: SPICE Device Model Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8487DB
11-Mar-11
63635
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si8802
Abstract: No abstract text available
Text: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8802DB
11-Mar-11
si8802
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SI1922EDH
Abstract: No abstract text available
Text: SPICE Device Model Si1922EDH www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si1922EDH
11-Mar-11
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si2338
Abstract: Si2338DS
Text: SPICE Device Model Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si2338DS
11-Mar-11
si2338
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS444DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiS444DN
11-Mar-11
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sis376dn
Abstract: No abstract text available
Text: SPICE Device Model SiS376DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiS376DN
11-Mar-11
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Abstract: No abstract text available
Text: SPICE Device Model SQJ960EP Vishay Siliconix Dual N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQJ960EP
11-Mar-11
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Abstract: No abstract text available
Text: SPICE Device Model Si1428EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si1428EDH
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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