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    TK40A Search Results

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    TK40A Price and Stock

    Toshiba America Electronic Components TK40A06N1,S4X

    MOSFET N-CH 60V 40A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK40A06N1,S4X Tube 291 1
    • 1 $1.72
    • 10 $1.72
    • 100 $1.72
    • 1000 $0.53007
    • 10000 $0.445
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    Mouser Electronics TK40A06N1,S4X 757
    • 1 $1.54
    • 10 $1.49
    • 100 $0.687
    • 1000 $0.477
    • 10000 $0.445
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    Toshiba America Electronic Components TK40A10N1,S4X

    MOSFET N-CH 100V 40A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK40A10N1,S4X Tube 26 1
    • 1 $2.51
    • 10 $2.51
    • 100 $2.51
    • 1000 $0.81873
    • 10000 $0.74625
    Buy Now
    Mouser Electronics TK40A10N1,S4X 64
    • 1 $2.24
    • 10 $2.02
    • 100 $1.09
    • 1000 $0.746
    • 10000 $0.746
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    Toshiba America Electronic Components TK40A10N1

    Trans MOSFET N-CH 100V 90A 3-Pin TO-220SIS - Rail/Tube (Alt: TK40A10N1,S4X)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK40A10N1 Tube 16 Weeks 50
    • 1 -
    • 10 -
    • 100 $0.88953
    • 1000 $0.80595
    • 10000 $0.80595
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    Toshiba America Electronic Components TK40A06N1

    Trans MOSFET N-CH 60V 60A 3-Pin TO-220SIS - Rail/Tube (Alt: TK40A06N1,S4X)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK40A06N1 Tube 16 Weeks 50
    • 1 -
    • 10 -
    • 100 $0.53044
    • 1000 $0.4806
    • 10000 $0.4806
    Buy Now

    Toshiba America Electronic Components TK40A10J1(Q)

    Trans MOSFET N-CH Si 100V 40A 3-Pin(3+Tab) TO-220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TK40A10J1(Q) 100 100
    • 1 -
    • 10 -
    • 100 $1.6026
    • 1000 $1.6026
    • 10000 $1.6026
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    TK40A Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK40A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TK40A Unknown Discontinued Transistor Data Book 1975 Scan PDF
    TK40A06N1 Toshiba TK40A06N1 - Nch 30V Original PDF
    TK40A06N1 Toshiba Transistors - Mosfets Original PDF
    TK40A06N1 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK40A06N1,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 60A TO220SIS Original PDF
    TK40A10K3 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK40A10K3 Toshiba Transistors - Mosfets Original PDF
    TK40A10N1 Toshiba TK40A10 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TK40A10N1 Toshiba Transistors - Mosfets Original PDF
    TK40A10N1 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK40A10N1,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A TO-220 Original PDF
    TK40A10N1,S4X(S Toshiba TK40A10N1 - TK40A10N1,S4X(S Original PDF

    TK40A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K40A10K3

    Abstract: TK40A10K3
    Text: TK40A10K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ TK40A10K3 スイッチングレギュレーター用 単位: mm : RDS (ON) = 11.5 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 80 S (標準)


    Original
    PDF TK40A10K3 SC-67 2-10U1B K40A10K3 TK40A10K3

    TK40A08K3

    Abstract: K40A08K3 TK40A
    Text: TK40A08K3 シリコンNチャネルMOS形 U-MOSⅣ 東芝電界効果トランジスタ TK40A08K3 スイッチングレギュレーター用 単位: mm :RDS (ON) = 7.0 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。:|Yfs| = 93 S (標準)


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    PDF TK40A08K3 SC-67 2-10U1B 20070701-JA TK40A08K3 K40A08K3 TK40A

    Untitled

    Abstract: No abstract text available
    Text: TK40A10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK40A10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 6.8 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V)


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    PDF TK40A10N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


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    PDF TK40A10N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK40A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK40A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 8.4 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original
    PDF TK40A06N1 O-220SIS

    TK40A10J1

    Abstract: K40A10J
    Text: TK40A10J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ TK40A10J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。 : Qg= 76 nC (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 90 S (標準)


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    PDF TK40A10J1 SC-67 2-10U1B TK40A10J1 K40A10J

    Untitled

    Abstract: No abstract text available
    Text: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


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    PDF TK40A06N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original
    PDF TK40A10N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original
    PDF TK40A06N1 O-220SIS

    K40A10J

    Abstract: k40a10 K40A
    Text: TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •


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    PDF TK40A10J1 K40A10J k40a10 K40A

    Untitled

    Abstract: No abstract text available
    Text: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original
    PDF TK40A06N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original
    PDF TK40A10N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original
    PDF TK40A06N1 O-220SIS

    TK40A10J1

    Abstract: No abstract text available
    Text: TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •


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    PDF TK40A10J1 TK40A10J1

    Untitled

    Abstract: No abstract text available
    Text: TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS TK40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)


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    PDF TK40A10K3 137led

    Untitled

    Abstract: No abstract text available
    Text: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original
    PDF TK40A10N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original
    PDF TK40A10N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


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    PDF TK40A06N1 O-220SIS

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


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    PDF SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan
    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29