BD160
Abstract: 2SC3303 2SD1147 to-53 2sb550
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .
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Original
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2N3192
2N1208
2N1250
2N2384
2N4902
2N5867
2N5869
2N4905
2N5068
2N4914
BD160
2SC3303
2SD1147
to-53
2sb550
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PDF
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sgsp531
Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92
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Original
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VN0640N2
TX106
IRF712
VN0340N2
MTD1N40
MTD1N40-1
RFP1N40
IRFF312
IRFF312
sgsp531
2sk76
irf33
unitrode
VN0340N5
sfn02806
stm231
stm331
650P
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PDF
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SDT85502
Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913
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Original
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2N2657
2N2658
2N2877
2N2878
2N2879
2N2880
2N2890
2N2891
2N3744
2N3745
SDT85502
SDT849
a/TO111
2N5002
SDT3403
SDT6314
BU208
2N2657
2N2877
2N2879
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PDF
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TU201
Abstract: TU111-B01 2N3658 TO111 TU108-B01 TU208-B01 TU137-B01 2n5384 2N3599 S2N2658-1
Text: Device Type Control Drawing VCBO VCEO ES/B IC CONT. POWER @ 100º C. Case Type MILLIJOULE MAX. WATTS 5.0 4.0 TO-5 BOLTS BOLTS 150 100 150 90 2.00 20.0 175.0 TO-63 100 80 - 20.0 100.0 TO-63 100 100 80 80 - 20.0 5.0 100.0 4.0 TO-63 TO-5 150 100 - 5.0 30.0
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Original
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O-111/I
TU131-B03
TU201
TU111-B01
2N3658
TO111
TU108-B01
TU208-B01
TU137-B01
2n5384
2N3599
S2N2658-1
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PDF
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VN1210N5
Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10
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Original
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RRF120
RRF520
UFN132
IRrj120
RRF522
SFN02802
SFN02812
SFN106A3
YTF520
IRF120
VN1210N5
BR 115N
sfn02202
RRF530
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PDF
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2SB5950
Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15
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Original
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SDT6316
SDT6416
SML1643
SML1653
2SB747
2N1211
2N1617
2SB5950
2SD5250
2SB616 NEC
2SD586
to-53
2SC940 NEC
2sb616
2SB595Y
2SB616 2SD586
2SD52
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PDF
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2SK2690-01
Abstract: SC-65 TO228AA
Text: I.Scope This specifies Fuji Power MOS FET 2SK2690-01 2.Construction N-Channel enhancement mode power MOSFET 3,Applications for Switching 4.0utview T0-3P Outview See to 5/13 page S.Absolute Maximum Ratings at Tc=25°C unless otherwise specified Symbol Description
|
OCR Scan
|
2SK2690-01
0257-R-003a
R-003a
2SK2690-01
SC-65
TO228AA
|
PDF
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N57R
Abstract: 7PNN
Text: _ I - _ _ SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2690-01 SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. D ATE NAM E . APPROVED Fuji Electric Co.,Ltd.
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OCR Scan
|
2SK2690-01
2SK2690-01
57-R-003a
0257-R-003a
N57R
7PNN
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PDF
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Untitled
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC 35E D • 03bt011 0002314 S * S S I T - 3 9 - o ff Solid State Devices, Inc. Power MosfetS* Continued 14849 Firestone Boulevard • La Mirada, C A 90638 Phone (213)921-9660 • Fax (714)522-7424 25°C Electrical Characteristics V D S*^#D S O N W *
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OCR Scan
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03bt011
O-254C
SFF9I30C
SFF9230C
SFF9140C
SFF9240C
O-254
SFF9130M
SFF9230M
SFF9140M
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PDF
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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OCR Scan
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2N2387
2N2988
2N2S89
2N2990
2N2991
2N2992
2N2993
2N2994
2N3439
2N3440
2NS604
2NS540
2NS154
SD716
SDT13305
2N5671
2N5005
SDT425
SDT7605
SDT96302
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PDF
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2N5286
Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT
|
OCR Scan
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2N2657
2N2658
2N2877
O-111
2N2878
2N2879
2N2880
2N5286
2N5290
SOLITRON
2N5740
SDT13305
SDT3775
SDT85502
2N439S
2N5610
2N6562
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PDF
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2N5672 solitron
Abstract: TU105-B01 2N5004 SDT55907 2N3658 TU201 TU108-B01 TU206-B01
Text: SOLITRON DEVICES INC K ¿eÆ liÊron _ r a Q i g H U ? © M M , ! Devices. Inc. DEVICE TYPE ito S P A C E FLIGHT PO W ER TRAIMSISTORS CONTROL DRAWING VCBO VOLTS VCEO VOLTS 2N5038 2N5074 2N5153 2N5539 2N5672 5203/009-01B 4203/022-01B
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OCR Scan
|
27flS
2N5038
2N5074
2N5153
2N5539
2N5672
2N6307
SDT3229
SDT55907
2N5672 solitron
TU105-B01
2N5004
2N3658
TU201
TU108-B01
TU206-B01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC 3SE D •! Ö3bb011 0002317 0 * S S I N-FET 28.0 100 0.077 SFF140V N-FET 18.0 200 0.180 SFF240V N-FET 10.0 400 0.550 SFF340V N-FET 8.0 500 0.850 SFF440V N-FET 30.0 100 0.055 SFF150V N-FET 30.0 200 0.085 SFF250V N-FET 15.0 400 0.300
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OCR Scan
|
3bb011
SFF140V
SFF240V
SFF340V
SFF440V
SFF150V
SFF250V
SFF350V
SFF450V
SFF9130V
|
PDF
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2N3599
Abstract: 1b01
Text: -JoütroiI S P A C E FLIG H T P O W E R T R A N S IS T O R S POWER @ 100“C WATTS CASE TYPE 5.0 5.0 5.0 5.0 5.0 4.0 30.0 30.0 30.0 30.0 TO-5 TO-111 TO-111 T O - l ll / I T O -1 l l / I 5.0 5.0 2.0 2.0 2.0 5.0 4.0 4.0 4.0 TO-5 TO-5* TO-5 TO-5 TO-5 5.00 —
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OCR Scan
|
S2N2S58
S2N2880
S2N2380-1
S2N3749
S2N3749-1
S2N4150
S2N4I50-1
S2N4863
2SN4863-1
S2N4B63-2
2N3599
1b01
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PDF
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|
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Dual Schottky Rectifiers
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC 3SE D • 03^011 g0//cystate Devices, Inc. 14849 Firestone Boulevard • La Mirada, CA 90638 Phone 213 921-9660 • Fax (714)522-7424 0005307 a * S S I f~23-07 Dual Schottky Rectifiers* Common Catho<Îe Configuration 25°C Electrical Characteristics Per Leg
|
OCR Scan
|
O-257
SSR2045CTJ
SSR2010CTJ
O-254C
R2045CTC
SSR2010CTC
O-254
SSR2045CTM
SSR2010CTM
T0-254Z
Dual Schottky Rectifiers
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOLID STATE D E V I C E S INC 3SE D M fl3bb011 00 02 31 0 A « S S I j l So//c/ State sS l Dual Ultrafast Rectifiers 25°C Electrical Characteristics Per Leg A Package Style TO-257 J v v IO ;% & -V F V Devices, Inc. 14849 Firestone Boulevard • La Mirada, CA 90638
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OCR Scan
|
fl3bb011
O-257
O-254C
O-254
O-254Z
O-228AA
SPD620CTJ
SPD620CTC
SDR625CTJ
SDR625CTC
|
PDF
|
TO-228AA
Abstract: No abstract text available
Text: TELEDYNE COMPONENTS T W X m EÖE D M öWbUS ^ æ QüQb417 3 J * r 3s m i 2 7 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE VERTICAL D-MOS FET ULTRA LOW-LEAKAGE ORDERING INFORMATION SD1127BD TO-228AA TO-92 Plastic Package SD1127CHP Sorted Chips in Waffle Pack
|
OCR Scan
|
Qb417
O-228AA
SD1127BD
SD1127CHP
OT-143)
TO-228AA
|
PDF
|
2SK2690
Abstract: 2SK2690-01 SC-65 TI SVG
Text: SPECIFICATION DEVICE NAME : Power M O SFET TYPE NAME 2SK2690-01 : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED DRAWN CHECKED -¿a Fuji Electric Co.,Ltd. V, & 1.Scope This specifies Fuji Power MO S F ET 2 S K2690-01
|
OCR Scan
|
2SK2690-01
0257-R-003a
R-003a
2SK2690
2SK2690-01
SC-65
TI SVG
|
PDF
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TU201
Abstract: 2N5004 2N5005 Solitron Devices TU115-B01 S2N4150 S2N2658 S2N2880-1 S2N3749 S2N3749-1
Text: _ 6 3 6 8 6 0 2 SOL I TRON DEVICES INC_ 95D 0 2 784 D T » *3 ^ - q / S0 LITR0 N DEVICES INC T5 DEI fl3 t.flbDa □0 DE7 Û4 h [ p ia » © ’!!’ © A T M ,© _ ^ r n E C F B E S S P A C E FLIGHT POW ER TRANSISTORS
|
OCR Scan
|
S2N2658
85M03767
S2N2880
85M02709
O-111
S2N2880-1
S2N3749
85M03775
TU201
2N5004
2N5005
Solitron Devices
TU115-B01
S2N4150
S2N3749-1
|
PDF
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1506-50
Abstract: TO228AA 25020 1506 60 D3103 SDRY1210 SDRY1220 SDRY430 SDRY440 SDRY450
Text: SOLITRON DEVICES INC D • T-o5- 1 03bfibDS DÜD31D3 S ■ T-03- If FAST RECOVERY RECTIFIERS (isolated packages PIV (V) VF 0 (A) SDRY810 SDRYS2C SDRY430 SDRY440 SDRY450 100 200 300 400 500 1.0508 1.1508 1.15(34 1.2504 1.2504 50 50 50 50 50 30 30 30 50 50
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OCR Scan
|
03bfibDS
D31D3
SDRY810
SDRY430
SDRY440
SDRY450
SDRY1210
SDRY1220
SDRY630
SDRY640
1506-50
TO228AA
25020
1506 60
D3103
|
PDF
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kt 714
Abstract: SFF220C
Text: SOLID STATE DEVICES INC 35E D B Ô3bb011 00Q2313 3 BISSI ^ ll Solid State Devices, Inc. 14849 Firestone Boulevard * La Mirada, CA 90638 Phone 213 921-9660 • Fax (714)522-7424 Silicon Controlled Rectifiers (SCRs) 25°C Electrical Characteristics Polarity
|
OCR Scan
|
3bb011
00Q2313
SFS2080J
SFS6344<
SFS2080C
SFS6344C
fr04257
O-254C
O-254
SFS2002M
kt 714
SFF220C
|
PDF
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SDT84
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC 95 D S0LITR0N DEVICES INC TS 02766 D T' J ?3- DE ö 3 h ö b ü 2 □ 00S7t.b 4 Devices. Inc. PLANAR POWER TRANSISTORS M [continued] (A fT MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 0.30 0.30 0.30 0.30 0.25 2.0
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OCR Scan
|
00S7t
SDT40302
SDT40303
SDT40304
SDT40305
SDT41301
SDT41302
SDT41303
SDT41304
SDT41305
SDT84
|
PDF
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