TRANSISTOR 81 110 W 74 Search Results

TRANSISTOR 81 110 W 74 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 81 110 W 74 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
philips ferroxcube 4c6 Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703 Text: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER	Original	PDF	BLF245 NCO8602 SCA57 philips ferroxcube 4c6 Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
sot446 Abstract: LWE2010S SC15 SOT446A Text: DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor	Original	PDF	LWE2010S SCA53 127147/00/02/pp12 sot446 LWE2010S SC15 SOT446A
MB4213 Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors	Original	PDF	SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
transistor SMD DK rc Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications	Original	PDF	BLS2731-110 OT423A SCA57 125108/00/04/pp12 transistor SMD DK rc transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
IDG-500 Abstract: BLF244 idg 500 NCO8701 NCO8702 Text: APPLICATION NOTE Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 NCO8702 Philips Semiconductors Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 CONTENTS	Original	PDF	BLF244 NCO8702 NCO8701 SCA57 IDG-500 BLF244 idg 500 NCO8702
BFQ235A Abstract: BFQ255A Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D066 BFQ235A NPN video transistor Product specification Supersedes data of 1997 Oct 02 1998 Oct 06 Discrete Semiconductors Product specification NPN video transistor BFQ235A FEATURES DESCRIPTION • High breakdown voltages	Original	PDF	M3D066 BFQ235A OT128B O-202) BFQ255A. MGA323 SCA60 125102/00/03/pp8 BFQ235A BFQ255A
BF588 Abstract: BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF588 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification PNP high-voltage transistor	Original	PDF	M3D067 BF588 O-202 MBH792 O-202) SCA52 117041/00/02/pp8 BF588 BP317
2SC2340 Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers	OCR Scan	PDF	L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e
transistor c s z 44 v Abstract: OC36 transistor 27F272 PH2729-110M Text: M a n A M P ic o m p a n y Radar Pulsed Power Transistor, 110W, 100ns Pulse, 10% Duty 2.7-2.9 GHz PH2729-110M V2.00 Features • • • • • • • • NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d C lass C O p e ra tio n	OCR Scan	PDF	100ns PH2729-110M 500S41W104KP4 ATC100A 73030833-07BOARD 73030837-U transistor c s z 44 v OC36 transistor 27F272 PH2729-110M
400 watt hf mosfet Abstract: 200 watt hf mosfet LF40100M "RF MOSFET" VDD400 Text: an A M P company RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz LF40100M V2.00 Features • • • • Gold Metallized • Common Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Lower Capacitances for Broadband Linear Operation	OCR Scan	PDF	LF40100M 120BIAS LF401Ã 45E05 400 watt hf mosfet 200 watt hf mosfet "RF MOSFET" VDD400
AX1209 Abstract: LF40100M LF40100 Text: A fa tjm m an A M P com pany RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz Features r.i Gold Metallized • Com m on Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Broadband Linear O peration Lower Capacitances for	OCR Scan	PDF	LF40100M AX1209 LF40100M LF40100

NE24300 Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318 Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator	OCR Scan	PDF	b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318
NE243187 Abstract: NE243188 Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The	OCR Scan	PDF	NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499
transistor K 1413 Abstract: 5607 transistor E243287 chip die npn transistor NE243287 Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH O SCILLATO R POW ER O UTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The	OCR Scan	PDF	NE243 NE24300 transistor K 1413 5607 transistor E243287 chip die npn transistor NE243287
transistor 81 110 w 63 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •	OCR Scan	PDF	MRF581 transistor 81 110 w 63
AT-60535 Abstract: No abstract text available Text: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz	OCR Scan	PDF	0QGbS13 AT-60535 AT-60535 310-371-8717or310-371-8478
2272 t4 Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz	OCR Scan	PDF	44A-01 RF177 MRF177M MRF177 MRF177M MRF177 P/RM77 2272 t4 c17 dual mos 1N5347B equivalent MRF177 equivalent
AT60535 Abstract: No abstract text available Text: AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Whpt H E W L E T T mL'tia P a c k a r d Features • • • • • 35 micro-X Package Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz	OCR Scan	PDF	AT-60535 AT60535
2sc2065 Abstract: Low Distortion Amplifiers ne22 TRANSISTOR ne22 NE22100 NE22120 S21E NE221 Text: N E C / 1SE D CALIFORNIA NEC • V b 4a ?414 O D D i a a ? 4 NPN MEDIUM POWER UHF-VHF TRANSISTOR NE22100 NE22120 ABSOLUTE MAXIMUM RATINGS FEATURES SYMBOLS • ULTR A-LINEAR B R O A D -B A N D A M P L IF IE R • LO W D IS T O R T IO N A T H IG H PO W E R PERFORMANCE SPECIFICATIONS	OCR Scan	PDF	NE22100 NE22120 NE221 NE22120 100mA--- 2sc2065 Low Distortion Amplifiers ne22 TRANSISTOR ne22 S21E
Transistor BFr 99 Abstract: No abstract text available Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	Q62702-F1219 OT-23 flE35b05 900MHz Transistor BFr 99
BF0235 Abstract: BF0235A BF023 Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BF0235A NPN video transistor Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors 1998 Oct 06 PHILIPS Discrete Semiconductors Product specification NPN video transistor BFQ235A FEATURES DESCRIPTION	OCR Scan	PDF	BF0235A BFQ235A OT128B O-202) BFQ255A. OT128B; 125102/00/03/pp8 BF0235 BF0235A BF023

TRANSISTOR 81 110 W 74 Search Results

TRANSISTOR 81 110 W 74 Result Highlights (5)

TRANSISTOR 81 110 W 74 Datasheets Context Search

philips ferroxcube 4c6

sot446

MB4213

alternator diode 1776 B

oz960

MN1280

transistor SMD DK rc

IDG-500

BFQ235A

BF588

2SC2340

transistor c s z 44 v

400 watt hf mosfet

AX1209

NE24300

NE243187

transistor K 1413

transistor 81 110 w 63

AT-60535

2272 t4

AT60535

2sc2065

Transistor BFr 99

BF0235