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    TRANSISTOR D 379 Search Results

    TRANSISTOR D 379 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 379 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    6c596

    Abstract: No abstract text available
    Text: TPIC6C596 POWER LOGIC 8ĆBIT SHIFT REGISTER SLIS093C − MARCH 2000 − REVISED APRIL 2005 D Low rDS on . . . 7 Ω Typ D Avalanche Energy . . . 30 mJ D Eight Power DMOS Transistor Outputs of D D D D D D D, N, OR PW PACKAGE (TOP VIEW) VCC SER IN DRAIN0 DRAIN1


    Original     		PDF TPIC6C596 SLIS093C 100-mA 250-mA 6c596

    smd transistor LY

    Abstract: smd transistor ISS smd transistor ISS 7
    Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		PDF BST120 MDA77S smd transistor LY smd transistor ISS smd transistor ISS 7

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    ESM379

    Abstract: esm diodes
    Text: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal


    OCR Scan     		PDF CB-146 ESM379 esm diodes

    mjec15030

    Abstract: transistor motorola parameters S transistor NPN mjec15031 2N6416 2N6418 5031-PNP 2N6417 MJE-15031 SILICON DICE motorola
    Text: MOTOROLA [ SC 34 {D IO D E S /O PTO 6367255 MOTOROLA SC D [F|b3b75S5 DIODES/OPTO 34c SILICON POWER TRANSISTOR DICE (continued) DIE NPN PNP 37967 y. NO.MJEC15030—NPN LINE SOURCE — PL500.E532 0D37Tb7 DIE ^ NO.MJEC1 5031—PNP LINE SOURCE — PL500.E533


    OCR Scan     		PDF b3b75S5 0D37Tb7 MJEC15030-- 5031--PNP PL500 2N6416 2N6417 D44H10 D44H11 mjec15030 transistor motorola parameters S transistor NPN mjec15031 2N6418 5031-PNP MJE-15031 SILICON DICE motorola

    Untitled

    Abstract: No abstract text available
    Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V


    OCR Scan     		PDF SN75468, SN75469 SLRS023B 500-mA ULN2003A ULN2004A, SN75468 SN75469 ilbl724 DlD10b2

    SILICON SMALL-SIGNAL DICE

    Abstract: opto transistor 2N2605 SILICON DICE motorola
    Text: MOTOROLA SC -CDIODES/OPTO} ¡ 6367255 MOTOROLA SC ~34 D E ^ L,3b7S5S DD37TÌ1 ? <DIO D E S /OPTO 34C 379g ! D SILICON SMALL-SIGNAL TRANSISTOR DICE continued) 2C3799 — d ie n o . PNP LINE SOURCE — DSL555 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF DD37T DSL555 2N2604 2N2605 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 SILICON SMALL-SIGNAL DICE opto transistor SILICON DICE motorola

    2N3773 MOTOROLA

    Abstract: 2N6029 MJ15003 MJ15004 motorola transistor PNP 2N6031 MOTOROLA 2NC6 mj15004 pnp 2C603 2nc60
    Text: MOTOROLA SC i D I O D E S / O P T O J 6367255 MOTOROLA "Im SC D F | b 3 b 7 2 S S 0037^3 3 D ( D IO D E S / OPTO 34 C 3793Ó T'33-Ot SIL'CON POWER TRANSISTOR DICE (continued) 2C5631 DIE NO. — NPN LINE SOURCE — PL500.34 NPN PNP D 2C6031 die no. — PNP


    OCR Scan     		PDF 33-Ot PL500 2C5631 2C6031 2N3773 2N5630 2N5631 MJ3773 MJ6302 2N3773 MOTOROLA 2N6029 MJ15003 MJ15004 motorola transistor PNP 2N6031 MOTOROLA 2NC6 mj15004 pnp 2C603 2nc60

    TRANSISTOR mosfet BF998

    Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
    Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF BF998 OT143 MCB346 MCB345 TRANSISTOR mosfet BF998 BF998 depletion UCB343 dual gate mosfet

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    MJ1800

    Abstract: 12HF 2N5839 motorola 352 transistor
    Text: M O T O R O L A SC { D I O D E S / O P T O } 6367255 34 MOTOROLA SC Dlf| L.3L.75SS D D 3 7 ‘ìS4 1 DIODES/OPTO 34C 37954 D SILICON POWER TRANSISTOR DICE (continued) 2C6543 d ie n o . LINE SOURCE — PL500.352 & This die provides performance equal to or better than that of


    OCR Scan     		PDF PL500 2N5838 2N5839 2NS840 2N6542 2N6543 MJ1800 MJ3260 MJ4400 MJ4401 12HF motorola 352 transistor

    T1P49

    Abstract: T1P50 T1P-50 motorola dice
    Text: MOTOROLA SC ÎDIODE S/ OPTOÏ 6367255 MOTOROLA T m SC D eT | t>3b7S5S □□37'ibfl 1 D IO D ES/O PTO 3^ c 37968 D 7~ 33"Oi SILICON POWER TRANSISTOR DICE (continued) TIPC47 DIE NO. — NPN LINE SOURCE — PL500.E572 This die provides performance equal to or better than that of


    OCR Scan     		PDF PL500 T1P48 T1P49 T1P50 TIPC47 350Vdc T1P50 T1P-50 motorola dice

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


    OCR Scan     		PDF 2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1

    2NC5339

    Abstract: 2N5349 2N6187 2n4877 2N6191 2N534B 2N5346 2n5430 2N6186 2nc53
    Text: MOTOROLA SC O I O D E S / O P T O } S367255 MOTOROLA 34 SC D I O D E S ]>F| L,3L,7S55 □ Q B 7 ti34 t. | ~ /O P TO 34C 37934 SILICON POWER TRANSISTOR DICE (continued) 2C5339 DIE NO. — NPN LINE SOURCE — PL500.68 NPN D r - 3 3 ^ '/ 2C6193 / DIE NO.


    OCR Scan     		PDF S367255 PL500 2C5339 2C6193 2N4877 2N5336 2N5337 2N5338 2NS339 2NC5339 2N5349 2N6187 2N6191 2N534B 2N5346 2n5430 2N6186 2nc53

    transistor 2N929

    Abstract: 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 2n929 2N5172 SILICON DICE motorola MPS5133
    Text: NOTOROLA SC {DIODES/OPTO* 6367255 MOTOROLA SC 34 D I O D E S /OPTO ' ÏF|bBb7ESS 0 0 3 7 ^ 34C 37999 . SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 7 " D ~7 2C5088 DIE NO. — NPN LINE SOURCE: DMB100 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF DMB100 2N929 2N930 2N5172 MMCM930 MMT930 MPS929 MPS930 MPS5133 MPS5172 transistor 2N929 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 SILICON DICE motorola

    2N6067

    Abstract: 2N3244 SILICON SMALL-SIGNAL DICE 2N3467 motorola dice
    Text: MOTOROLA SC - C D I O D E S / O P T O } 34 i 6367255 MOTOROLA SC DE | b3b72S5 D O B ? 1^ <D I O D E S / O P T O 34C SILICON SMALL-SIGNAL TRANSISTOR DICE continued) fi 37983 D T "" 3 7 - / / 2C3468 DIE NO. — PNP LINE SOURCE — DSL337 f4 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF b3b72S5 DSL337 2C3468 2N3244 2N3245 2N3467 2N3468 2N6067 MM3726* SILICON SMALL-SIGNAL DICE motorola dice

    2N6576

    Abstract: SILICON DICE motorola 2N6578
    Text: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA 34 SC DE|b3b75S5 D I O D E S /O P T O GD37ma 37942 D T '3 3 ~0 ( SILICON POW ER TRANSISTOR DICE (continued) 2C6056 DIE NO. — NPN LINE SOURCE — PL500.10 T his die provides perform ance equal to or better than that of


    OCR Scan     		PDF b3b75S5 GD37ma PL500 2C6056 2N6383 2N6384 2N6385 2N6576 2N6577 2N6578 SILICON DICE motorola

    Diode LT 404

    Abstract: 100-P BUK456 BUK456-100A BUK456-100B T0220AB
    Text: N AMER P H IL IP S /D IS C R E T E h^E T> • bbSBTBl ODBDbûO P h ilip s S e m ico n d u cto rs PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF D030bfll BUK456-100A/B T0220AB BUK456 -100A -100B /V-20/ Diode LT 404 100-P BUK456-100A BUK456-100B

    2N5345

    Abstract: MJ4647 2n5344 SILICON DICE motorola transistor motorola 2C5345 mj4646
    Text: MOTOROLA 3M SC -CDIODES/OPTOJ 6367255 MOTOROLA SC » F lt.3 t.7 S S S D IO D E S /O P T O 34C 0037=135 37935 6 D „q j SILICON POWER TRANSISTOR DICE (continued) 2C5345 DIE NO. LINE SOURCE — PL500.77 This die provides performance equal to or better than that of


    OCR Scan     		PDF PL500 2C5345 2N5344 2N5345 MJ4645 MJ4646 MJ4647 MJ4648 SILICON DICE motorola transistor motorola 2C5345

    transistor T330

    Abstract: MJ205 MJ12002 MJ-12002
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DËT|L,3b7E5S D IO D E S /O P TO 34C 1 □ 0 3 7 ci5fl 37958 T-33-0« SILICON POWER TRANSISTOR DICE (continued) BUC205 DIE NO. — NPN LINE SOURCE — PL500.332 This die provides performance equal to or better than that of


    OCR Scan     		PDF T-33-0« PL500 BU205 MJ205 MJ701 MJ702 MJ704 MJ721 MJ723 MJ12002 transistor T330 MJ12002 MJ-12002

    MOTOROLA 2N6277

    Abstract: 2N6277 applications MOTOROLA 2N6277 DIE 2N6382 3-7946 2N6277 2N6380
    Text: MOTOROLA SC O I O D E S / O P T O J 6367255 MOTOROLA SC 34 DE I b 3 b ? a S S <D I O D E S / O P T O 34C 0D37i4ti S | ~ 37946 1 SILICON POWER TRANSISTOR DICE continued) 2C6277 PNP 3 3 - 0 / 2C6379 / DIE NO. — NPN LINE SOURCE — PL500.70 NPN ~ ~ D die n o .


    OCR Scan     		PDF 0D37i4ti PL500 2C6277 2N6274 2N627S 2N6276 2N6277 2C6379 2N6278 MOTOROLA 2N6277 2N6277 applications MOTOROLA 2N6277 DIE 2N6382 3-7946 2N6277 2N6380

    SILICON SMALL-SIGNAL DICE

    Abstract: No abstract text available
    Text: MOTOROLA SC {D IO DES /OPTO} 34 SILICON SMALL-SIGNAL TRANSISTOR DICE continued D I b3fc725S D037TÌD 34C 37990 T- 3 7 " ( S ' 2C3762 DIE NO. — PNP LINE SOURCE — DSL60 This die provides performance similar to that of the following device types: (SÌ 2N3762


    OCR Scan     		PDF b3fc725S D037T DSL60 2C3762 2N3762 2N3763 2N3764 2N3765 SILICON SMALL-SIGNAL DICE