TRANSISTOR D 379 Search Results

TRANSISTOR D 379 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR D 379 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
smd transistor LY Abstract: smd transistor ISS smd transistor ISS 7 Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.	OCR Scan	BST120 MDA77S smd transistor LY smd transistor ISS smd transistor ISS 7	PDF
transistor NEC D 822 P Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2 Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters	OCR Scan	2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P	PDF
ESM379 Abstract: esm diodes Text: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal	OCR Scan	CB-146 ESM379 esm diodes	PDF
mjec15030 Abstract: transistor motorola parameters S transistor NPN mjec15031 2N6416 2N6418 5031-PNP 2N6417 MJE-15031 SILICON DICE motorola Text: MOTOROLA [ SC 34 {D IO D E S /O PTO 6367255 MOTOROLA SC D [F\|b3b75S5 DIODES/OPTO 34c SILICON POWER TRANSISTOR DICE (continued) DIE NPN PNP 37967 y. NO.MJEC15030—NPN LINE SOURCE — PL500.E532 0D37Tb7 DIE ^ NO.MJEC1 5031—PNP LINE SOURCE — PL500.E533	OCR Scan	b3b75S5 0D37Tb7 MJEC15030-- 5031--PNP PL500 2N6416 2N6417 D44H10 D44H11 mjec15030 transistor motorola parameters S transistor NPN mjec15031 2N6418 5031-PNP MJE-15031 SILICON DICE motorola	PDF
Untitled Abstract: No abstract text available Text: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V	OCR Scan	SN75468, SN75469 SLRS023B 500-mA ULN2003A ULN2004A, SN75468 SN75469 ilbl724 DlD10b2	PDF
SILICON SMALL-SIGNAL DICE Abstract: opto transistor 2N2605 SILICON DICE motorola Text: MOTOROLA SC -CDIODES/OPTO} ¡ 6367255 MOTOROLA SC ~34 D E ^ L,3b7S5S DD37TÌ1 ? <DIO D E S /OPTO 34C 379g ! D SILICON SMALL-SIGNAL TRANSISTOR DICE continued) 2C3799 — d ie n o . PNP LINE SOURCE — DSL555 This die provides performance similar to that of the following device types:	OCR Scan	DD37T DSL555 2N2604 2N2605 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 SILICON SMALL-SIGNAL DICE opto transistor SILICON DICE motorola	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
2N3773 MOTOROLA Abstract: 2N6029 MJ15003 MJ15004 motorola transistor PNP 2N6031 MOTOROLA 2NC6 mj15004 pnp 2C603 2nc60 Text: MOTOROLA SC i D I O D E S / O P T O J 6367255 MOTOROLA "Im SC D F \| b 3 b 7 2 S S 0037^3 3 D ( D IO D E S / OPTO 34 C 3793Ó T'33-Ot SIL'CON POWER TRANSISTOR DICE (continued) 2C5631 DIE NO. — NPN LINE SOURCE — PL500.34 NPN PNP D 2C6031 die no. — PNP	OCR Scan	33-Ot PL500 2C5631 2C6031 2N3773 2N5630 2N5631 MJ3773 MJ6302 2N3773 MOTOROLA 2N6029 MJ15003 MJ15004 motorola transistor PNP 2N6031 MOTOROLA 2NC6 mj15004 pnp 2C603 2nc60	PDF
TRANSISTOR mosfet BF998 Abstract: BF998 depletion BF998 UCB343 dual gate mosfet Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor	OCR Scan	BF998 OT143 MCB346 MCB345 TRANSISTOR mosfet BF998 BF998 depletion UCB343 dual gate mosfet	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
MJ1800 Abstract: 12HF 2N5839 motorola 352 transistor Text: M O T O R O L A SC { D I O D E S / O P T O } 6367255 34 MOTOROLA SC Dlf\| L.3L.75SS D D 3 7 ‘ìS4 1 DIODES/OPTO 34C 37954 D SILICON POWER TRANSISTOR DICE (continued) 2C6543 d ie n o . LINE SOURCE — PL500.352 & This die provides performance equal to or better than that of	OCR Scan	PL500 2N5838 2N5839 2NS840 2N6542 2N6543 MJ1800 MJ3260 MJ4400 MJ4401 12HF motorola 352 transistor	PDF
T1P49 Abstract: T1P50 T1P-50 motorola dice Text: MOTOROLA SC ÎDIODE S/ OPTOÏ 6367255 MOTOROLA T m SC D eT \| t>3b7S5S □□37'ibfl 1 D IO D ES/O PTO 3^ c 37968 D 7~ 33"Oi SILICON POWER TRANSISTOR DICE (continued) TIPC47 DIE NO. — NPN LINE SOURCE — PL500.E572 This die provides performance equal to or better than that of	OCR Scan	PL500 T1P48 T1P49 T1P50 TIPC47 350Vdc T1P50 T1P-50 motorola dice	PDF
2N3055 MOTOROLA Abstract: MJ2953 MJ2950 MJE34 pnp MJ2954 mjE34 2N5983 MJ2951 MJE34 power transistor 2N5876 Text: 34 MOT O RO LA SC -CDIODES/OPTO} 6367255 MOTOROLA SC D ^ \| b 3 b ? a S S 0Q37TS3 Q \| ~ D IO D E S /O P T O 34C 37953 SILICON POWER TRANSISTOR DICE (continued) 2C6488 PNP ~01 2C6491 / DIE NO. — NPN LINE SOURCE — PL500.E228 NPN ”^ - 3 3 D DIE NO. — PNP	OCR Scan	0Q37TS3 PL500 2C6488 2N3055 2N4347 2N5983 2NS984 2N5985 2N6486 2N6487 2N3055 MOTOROLA MJ2953 MJ2950 MJE34 pnp MJ2954 mjE34 MJ2951 MJE34 power transistor 2N5876	PDF

2NC5339 Abstract: 2N5349 2N6187 2n4877 2N6191 2N534B 2N5346 2n5430 2N6186 2nc53 Text: MOTOROLA SC O I O D E S / O P T O } S367255 MOTOROLA 34 SC D I O D E S ]>F\| L,3L,7S55 □ Q B 7 ti34 t. \| ~ /O P TO 34C 37934 SILICON POWER TRANSISTOR DICE (continued) 2C5339 DIE NO. — NPN LINE SOURCE — PL500.68 NPN D r - 3 3 ^ '/ 2C6193 / DIE NO.	OCR Scan	S367255 PL500 2C5339 2C6193 2N4877 2N5336 2N5337 2N5338 2NS339 2NC5339 2N5349 2N6187 2N6191 2N534B 2N5346 2n5430 2N6186 2nc53	PDF
6c596 Abstract: No abstract text available Text: TPIC6C596 POWER LOGIC 8ĆBIT SHIFT REGISTER SLIS093C − MARCH 2000 − REVISED APRIL 2005 D Low rDS on . . . 7 Ω Typ D Avalanche Energy . . . 30 mJ D Eight Power DMOS Transistor Outputs of D D D D D D D, N, OR PW PACKAGE (TOP VIEW) VCC SER IN DRAIN0 DRAIN1	Original	TPIC6C596 SLIS093C 100-mA 250-mA 6c596	PDF
transistor 2N929 Abstract: 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 2n929 2N5172 SILICON DICE motorola MPS5133 Text: NOTOROLA SC {DIODES/OPTO* 6367255 MOTOROLA SC 34 D I O D E S /OPTO ' ÏF\|bBb7ESS 0 0 3 7 ^ 34C 37999 . SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 7 " D ~7 2C5088 DIE NO. — NPN LINE SOURCE: DMB100 This die provides performance similar to that of the following device types:	OCR Scan	DMB100 2N929 2N930 2N5172 MMCM930 MMT930 MPS929 MPS930 MPS5133 MPS5172 transistor 2N929 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 SILICON DICE motorola	PDF
2N6067 Abstract: 2N3244 SILICON SMALL-SIGNAL DICE 2N3467 motorola dice Text: MOTOROLA SC - C D I O D E S / O P T O } 34 i 6367255 MOTOROLA SC DE \| b3b72S5 D O B ? 1^ <D I O D E S / O P T O 34C SILICON SMALL-SIGNAL TRANSISTOR DICE continued) fi 37983 D T "" 3 7 - / / 2C3468 DIE NO. — PNP LINE SOURCE — DSL337 f4 This die provides performance similar to that of the following device types:	OCR Scan	b3b72S5 DSL337 2C3468 2N3244 2N3245 2N3467 2N3468 2N6067 MM3726* SILICON SMALL-SIGNAL DICE motorola dice	PDF
2N6576 Abstract: SILICON DICE motorola 2N6578 Text: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA 34 SC DE\|b3b75S5 D I O D E S /O P T O GD37ma 37942 D T '3 3 ~0 ( SILICON POW ER TRANSISTOR DICE (continued) 2C6056 DIE NO. — NPN LINE SOURCE — PL500.10 T his die provides perform ance equal to or better than that of	OCR Scan	b3b75S5 GD37ma PL500 2C6056 2N6383 2N6384 2N6385 2N6576 2N6577 2N6578 SILICON DICE motorola	PDF
Diode LT 404 Abstract: 100-P BUK456 BUK456-100A BUK456-100B T0220AB Text: N AMER P H IL IP S /D IS C R E T E h^E T> • bbSBTBl ODBDbûO P h ilip s S e m ico n d u cto rs PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	D030bfll BUK456-100A/B T0220AB BUK456 -100A -100B /V-20/ Diode LT 404 100-P BUK456-100A BUK456-100B	PDF
2N5345 Abstract: MJ4647 2n5344 SILICON DICE motorola transistor motorola 2C5345 mj4646 Text: MOTOROLA 3M SC -CDIODES/OPTOJ 6367255 MOTOROLA SC » F lt.3 t.7 S S S D IO D E S /O P T O 34C 0037=135 37935 6 D „q j SILICON POWER TRANSISTOR DICE (continued) 2C5345 DIE NO. LINE SOURCE — PL500.77 This die provides performance equal to or better than that of	OCR Scan	PL500 2C5345 2N5344 2N5345 MJ4645 MJ4646 MJ4647 MJ4648 SILICON DICE motorola transistor motorola 2C5345	PDF
transistor T330 Abstract: MJ205 MJ12002 MJ-12002 Text: MOTOROLA SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DËT\|L,3b7E5S D IO D E S /O P TO 34C 1 □ 0 3 7 ci5fl 37958 T-33-0« SILICON POWER TRANSISTOR DICE (continued) BUC205 DIE NO. — NPN LINE SOURCE — PL500.332 This die provides performance equal to or better than that of	OCR Scan	T-33-0« PL500 BU205 MJ205 MJ701 MJ702 MJ704 MJ721 MJ723 MJ12002 transistor T330 MJ12002 MJ-12002	PDF
MOTOROLA 2N6277 Abstract: 2N6277 applications MOTOROLA 2N6277 DIE 2N6382 3-7946 2N6277 2N6380 Text: MOTOROLA SC O I O D E S / O P T O J 6367255 MOTOROLA SC 34 DE I b 3 b ? a S S <D I O D E S / O P T O 34C 0D37i4ti S \| ~ 37946 1 SILICON POWER TRANSISTOR DICE continued) 2C6277 PNP 3 3 - 0 / 2C6379 / DIE NO. — NPN LINE SOURCE — PL500.70 NPN ~ ~ D die n o .	OCR Scan	0D37i4ti PL500 2C6277 2N6274 2N627S 2N6276 2N6277 2C6379 2N6278 MOTOROLA 2N6277 2N6277 applications MOTOROLA 2N6277 DIE 2N6382 3-7946 2N6277 2N6380	PDF
SILICON SMALL-SIGNAL DICE Abstract: No abstract text available Text: MOTOROLA SC {D IO DES /OPTO} 34 SILICON SMALL-SIGNAL TRANSISTOR DICE continued D I b3fc725S D037TÌD 34C 37990 T- 3 7 " ( S ' 2C3762 DIE NO. — PNP LINE SOURCE — DSL60 This die provides performance similar to that of the following device types: (SÌ 2N3762	OCR Scan	b3fc725S D037T DSL60 2C3762 2N3762 2N3763 2N3764 2N3765 SILICON SMALL-SIGNAL DICE	PDF

TRANSISTOR D 379 Search Results

TRANSISTOR D 379 Result Highlights (5)

TRANSISTOR D 379 Datasheets Context Search

smd transistor LY

transistor NEC D 822 P

ESM379

mjec15030

Untitled

SILICON SMALL-SIGNAL DICE

tip122 tip127 audio amp schematic

2N3773 MOTOROLA

TRANSISTOR mosfet BF998

2N2222A 338

y51 h 120c

MJ1800

T1P49

2N3055 MOTOROLA

2NC5339

6c596

transistor 2N929

2N6067

2N6576

Diode LT 404

2N5345

transistor T330

MOTOROLA 2N6277

SILICON SMALL-SIGNAL DICE