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    TRANSISTOR LD25 Search Results

    TRANSISTOR LD25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LD25 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR LD25

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


    OCR Scan     		BUK581-100A OT223 BUK581 -100A TRANSISTOR LD25 PDF

    LD25C

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		BUK553-100A/B BUK553 -100A -100B BUK553-1OOA/B LD25C PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		BUK545-60A/B BUK545 BUK545-60A/B PDF

    k552

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BU K552-1OOA/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		K552-1OOA/B BUK552 -100A -100B BUK552-100A/B k552 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		BUK542-100A/B BUK542 -100A -100B OT186 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK566-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


    OCR Scan     		BUK566-60H BUK566-60H PDF

    LD25C

    Abstract: GS12-16
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		BUK565-200A LD25C GS12-16 PDF

    LD25C

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche


    OCR Scan     		PHD3055L LD25C PDF

    TRANSISTOR S 838

    Abstract: 600 V logic level fet
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK562-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		BUK562-100A SQT404 BUK562-100A TRANSISTOR S 838 600 V logic level fet PDF

    BUK416-1OOAE

    Abstract: BUK416-100BE BUK416-100AE transistor 136 138 140
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK416-100AE/BE BUK416 -100AE -100BE OT227B BUK416-1OOAE/BE BUK416-1OOAE BUK416-100BE BUK416-100AE transistor 136 138 140 PDF

    ht 25 transistor

    Abstract: BUK638-500B
    Text: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		BUK638-500B 711DflSb ODb431S ht 25 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK437-400B Fig13. PDF

    lg ipm

    Abstract: PHT11N06T 25C312
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET PHT11N06T GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the


    OCR Scan     		PHT11N06T OT223 OT223. lg ipm PHT11N06T 25C312 PDF

    ld 18

    Abstract: TRANSISTOR LD25
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		BUK482-100A OT223 OT223. ld 18 TRANSISTOR LD25 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		0Db431b T0220AB BUK655-500B 711002b aab432D PDF

    PHB80N06T

    Abstract: T404
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    OCR Scan     		PHB80N06T OT404 PHB80N06T T404 PDF

    PHB65N06T

    Abstract: T404
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    OCR Scan     		PHB65N06T OT404 PHB65N06T T404 PDF

    GIS 110 kV

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification BUK9880-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very


    OCR Scan     		BUK9880-55 OT223 OT223. 35\im GIS 110 kV PDF

    BUK454-500B

    Abstract: BUK454 BUK454-500A T0220AB
    Text: Philips Components BUK454-500A BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK454-500A BUK454-500B BUK454 -500A -500B T0220AB M89-1160/RC BUK454-500B BUK454-500A PDF

    BUK443-60A

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK443-60A/B BUK443 OT186 BUK443-60A PDF

    EUK442

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK442-100A/B EUK442 -100A -100B PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		BUK7508-55 T0220AB -ID/100 PDF

    BUK445

    Abstract: BUK445-60A BUK445-60B
    Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		711002b BUK445-60A/B -SOT186 DS/V-12/ ID/100 BUK445 BUK445-60A BUK445-60B PDF

    LD25V

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		BUK9510-30 T0220AB LD25V PDF