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    TRANSISTOR S11 S12 S21 S22 Search Results

    TRANSISTOR S11 S12 S21 S22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S11 S12 S21 S22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 5929 transistor

    Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
    Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz


    Original     		PDF UPA802T NE681 UPA802T UPA802T-T1-A 24-Hour c 5929 transistor transistor k 2541 Transistor C 4927 741 LEM 2955 transistor lem 723 733 transistor c 5299

    transistor s11 s12 s21 s22

    Abstract: UPA802T 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 NE681 transistor j50
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz


    Original     		PDF UPA802T NE681 UPA802T UPA802T-T1 24-Hour transistor s11 s12 s21 s22 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 transistor j50

    UPA802T

    Abstract: a 3120 0537 741 LEM NE681 S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz


    Original     		PDF UPA802T NE681 UPA802T a 3120 0537 741 LEM S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299

    transistor k 4110

    Abstract: mje 3007 UPA800T 3019 Transistor BJT 5240
    Text: SILICON TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • UPA800T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz


    Original     		PDF NE680 UPA800T UPA800T 24-Hour transistor k 4110 mje 3007 3019 Transistor BJT 5240

    transistor 8730

    Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		PDF UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240

    transistor pt 6007

    Abstract: NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478
    Text: SILICON TRANSISTOR UPA807T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz


    Original     		PDF UPA807T NE686 UPA807T 24-Hour transistor pt 6007 NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478

    transistor j50

    Abstract: c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 NE686 S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz


    Original     		PDF UPA807T NE686 UPA807T low12 24-Hour transistor j50 c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 S21E

    AZ 2535 08 101

    Abstract: transistor 9747 c 5929 transistor C 5478 transistor UPA807T 6292 transistor NE686 S21E UPA807T-T1 UPA807T-T1-A
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz


    Original     		PDF UPA807T NE686 UPA807T AZ 2535 08 101 transistor 9747 c 5929 transistor C 5478 transistor 6292 transistor S21E UPA807T-T1 UPA807T-T1-A

    TRANSISTOR C 6090 npn

    Abstract: ic 7407 PT 3195 rf power transistor UPA800T nec K 3570 NEC 5623 UPA800T-T1-A LB 11910 NE680 Mje 1533
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		PDF UPA800T NE680 UPA800T TRANSISTOR C 6090 npn ic 7407 PT 3195 rf power transistor nec K 3570 NEC 5623 UPA800T-T1-A LB 11910 Mje 1533

    transistor K 2937

    Abstract: TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor
    Text: SILICON TRANSISTOR UPA806T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz


    Original     		PDF NE685 UPA806T UPA806T 24-Hour transistor K 2937 TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor

    TRANSISTOR C 6090 npn

    Abstract: TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 NE685 S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 12 GHz


    Original     		PDF UPA806T NE685 UPA806T 24-Hour TRANSISTOR C 6090 npn TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 S21E

    TRANSISTOR C 6090

    Abstract: transistor pt 6020 TRANSISTOR C 6090 npn Transistor 17567 transistor 5910 transistor 9740 Bf 148 TRANSISTOR 13270 transistor
    Text: SILICON TRANSISTOR UPA808T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz


    Original     		PDF UPA808T NE687 UPA808T 24-Hour TRANSISTOR C 6090 transistor pt 6020 TRANSISTOR C 6090 npn Transistor 17567 transistor 5910 transistor 9740 Bf 148 TRANSISTOR 13270 transistor

    high power FET transistor s-parameters

    Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1

    transistor s11 s12 s21 s22

    Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21

    RF transistors with s-parameters

    Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
    Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar


    Original     		PDF 5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave

    transistor s11 s12 s21 s22

    Abstract: NE856M02-T1-AZ NE856M02
    Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor


    Original     		PDF OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ

    TRANSISTOR 3358

    Abstract: transistor 9527 LB 4890 NE685 S21E UPA806T UPA806T-T1 UPA806T-T1-A of IC 9290 transistor k 4110
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 12 GHz


    Original     		PDF UPA806T NE685 UPA806T TRANSISTOR 3358 transistor 9527 LB 4890 S21E UPA806T-T1 UPA806T-T1-A of IC 9290 transistor k 4110

    TRANSISTOR C 6090

    Abstract: TRANSISTOR C 6090 npn transistor pt 6020 NE687 S21E UPA808T UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • LOW CURRENT OPERATION


    Original     		PDF UPA808T NE687 UPA808T TRANSISTOR C 6090 TRANSISTOR C 6090 npn transistor pt 6020 S21E UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz


    Original     		PDF OT-89 NE856M02 24-Hour

    transistor s11 s12 s21 s22

    Abstract: 2SC5336 NE856M02 NE856M02-T1 S21E NEC JAPAN 2415 0458 npn
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz


    Original     		PDF OT-89 NE856M02 NE856M0in transistor s11 s12 s21 s22 2SC5336 NE856M02-T1 S21E NEC JAPAN 2415 0458 npn

    ic 7738

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE851M13 NE851M13 15e-12 170e-15 ic 7738

    transistor 224-1 base collector emitter

    Abstract: transistor 0588
    Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector


    Original     		PDF NE461M02 OT-89 NE461M02 24-Hour transistor 224-1 base collector emitter transistor 0588

    ic 7738

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance


    Original     		PDF NE851M13 NE851M13 ic 7738

    ls 7413 n

    Abstract: V 8623 transistor UPA800T HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor
    Text: UPA800T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: • HIGH GAIN: • EXCELLENT LOW VOLTAGE, LOW CURRENT


    OCR Scan     		PDF NE680 UPA800T UPA800T 24-Hour ls 7413 n V 8623 transistor HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor