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    TRANSISTOR TO-126 OUTLINE DIMENSIONS Search Results

    TRANSISTOR TO-126 OUTLINE DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2712 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC3325 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2713 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=0.1 A / hFE=200~700 / VCE(sat)=0.3 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC4116 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-323 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-126 OUTLINE DIMENSIONS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Darlington Power Transistor Features: • Silicon NPN • Darlington • High DC current gain Fig. 1 Simplified Outline TO-126 and Symbol Pinning Pin Description 1 Emitter 2 Collector; connected to mounting base 3 Base Absolute Maximum Ratings (Ta = 25°C)


    Original     		O-126) element14 PDF

    toshiba mosfet

    Abstract: jeita To-126 transistor to6 trangister TO126 package
    Text: Trangister Outline Package TO-126 Package Outline Dimensions Outline Dimensions Unit: mm 8.3 max 11.0 ±0.3 3.5 φ3.1 ±0.1 1.9 max 0.75 ±0.15 2.3 ±0.1 2 3 0.75 ±0.15 3.4 max 1 1.6 2.3 ±0.1 14.0 min 1.9 max 1.0 max Toshiba package name Toshiba package code


    Original     		O-126 toshiba mosfet jeita To-126 transistor to6 trangister TO126 package PDF

    TRANSISTOR nf 842

    Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz


    OCR Scan     		NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534 PDF

    TRANSISTOR nf 842

    Abstract: D 843 Transistor transistor su 312
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:


    OCR Scan     		NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 * EMITTER 3 « COLLECTOR 2.6 2.4 _ 1.02 0.8ST 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		CMBT4403 PDF

    cd 1191 cb

    Abstract: lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS HIGH fT : Units in mm PACKAGE OUTLINE M01 14 G Hz T Y P at 3 V, 10 mA LOW NOISE FIGURE: TOP VIEW IMF = 1 .6 dB TYP at 2 GHz — HIGH GAIN: 2.1 ± 0.1 - -1.25 ± 0 .1 -*


    OCR Scan     		NE696M01 NE696M01 NE685) OT363 7e-16 1e-13 4e-12 18e-12 696M01 cd 1191 cb lex m01 001 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00


    OCR Scan     		CMBT4403 23A33T4 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P -N - P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .14 "Iprüi Pin configuration 1 = BASE 2 » EMITTER 3 * COLLECTOR ABSOLUTE MAXIMUM RATINGS Colleetor-emitter voltage Collector current DC


    OCR Scan     		CMBT4403 PDF

    CMBT4403

    Abstract: No abstract text available
    Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N -P transistor M arking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 _L 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 1.2 2.4 R0.1 .004 "


    OCR Scan     		CMBT4403 CMBT4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE b 2 4 ci ß 2 ci D017222 13b • _ M57764 806-825MHZ, 12.5V, 20W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm B LO C K DIAGRAM PIN : Pin © VCCI @VCC2 @ VCC3 PO © G ND : RF INPUT : 1st. DC S U P P LY : 2nd. DC S U PPLY


    OCR Scan     		D017222 M57764 806-825MHZ, PDF

    IC 4047

    Abstract: bf 695 NE685 NE696M01 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 IC 4047 bf 695 NE685 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001 PDF

    nec K 3570

    Abstract: bf 695 bjt 522 NE685 NE696M01 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE


    Original     		NE696M01 NE696M01 NE685) OT363 4e-12 18e-12 696M01 nec K 3570 bf 695 bjt 522 NE685 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001 PDF

    NE685

    Abstract: NE696M01 NE696M01-T1 S21E lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 NE685 NE696M01-T1 S21E lex m01 001 PDF

    ic CD 4047

    Abstract: lex m01 001 ha 431 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE696M01 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M01 HIG H fT: 14 GHz TYP at 3 V, 10 mA TOP VIEW LOW N O IS E F IG U R E : NF = 1.6 dB TYP at 2 GHz - HIG H G A IN : •— 1.25 + 0.1-»


    OCR Scan     		NE696M01 NE696M01 NE685) OT363 05e-12 15e-12 22e-9 5e-12 13e-12 15e-9 ic CD 4047 lex m01 001 ha 431 transistor PDF

    transistor c 458

    Abstract: BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor
    Text: DISCRETE SEMICONDUCTORS BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors


    OCR Scan     		BD132 O-126; BD131. MAM272 O-126 transistor c 458 BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor PDF

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1 PDF

    F1 J37

    Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm


    Original     		NEL200101-24 NEL2001012-24 F1 J37 class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035 PDF

    TRANSISTOR BI 243

    Abstract: tr/TRANSISTOR BI 243
    Text: E Q SLOTTED OPTICAL SWITCH OP TO E L E CT R ON I CS H21A4/5/6 PACKAGE DIMENSIONS SYMBOL -D1 - ©T — lX 3 | g b! SECTION X - xT~ LEAD PROFILE S T 1339-01 MILLIMETERS M!N. MAX. INCHES MIN. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119


    OCR Scan     		H21A4/5/6 ST1144-11 ST1141-11 ST1145-11 ST1142-11 ST1143-11 TRANSISTOR BI 243 tr/TRANSISTOR BI 243 PDF

    st1143

    Abstract: ic st1143 TRANSISTOR BI 243 STI339-02 H21A5 H21A H21A4 H21A6
    Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS H21A4/5/6 PACKAGE DIMENSIONS SYMBOL - D i - i D2h- MILLIMETERS MIN. — I »>i i © "t= r p ¿ 5 b! SECTION X - X LEAD PROFILE ST1339-01 T MAX. INCHES MIN. MAX. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 A,


    OCR Scan     		H21A4/5/6 STI339-02 ST1140-11 ST1144-11 ST1145-11 ST1142-11 ST1143-11 st1143 ic st1143 TRANSISTOR BI 243 STI339-02 H21A5 H21A H21A4 H21A6 PDF

    IC 7107

    Abstract: IB 6410 NE685 NE696M01 NE696M01-T1 NE696M01-T1-A S21E lex m01 001
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE


    Original     		NE696M01 NE696M01 NE685) OT363 IC 7107 IB 6410 NE685 NE696M01-T1 NE696M01-T1-A S21E lex m01 001 PDF

    LB 1639

    Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem PDF

    TRANSISTOR BI 243

    Abstract: ST1318 CNY28 ST1317 ST1609 ST1315 tip 147 TRANSISTOR
    Text: C ? Q SLOTTED OPTICAL SWITCH OPTOELECTRONICS CNY28 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. r -4>p A INCHES MIN. MAX. 10.7 11.0 .422 .433 .125 i b,r L A, 3.0 3.2 .119 bi Aj 3.0 3.2 .119 .125 .024 .030 SECTIO N X - X f LEAD PROFILE @b b, .750 .50 NOM.


    OCR Scan     		CNY28 ST1339 ST1609 ST1315 ST1317 ST1318 TRANSISTOR BI 243 CNY28 ST1317 ST1609 ST1315 tip 147 TRANSISTOR PDF

    2SC1365

    Abstract: 2SC1252 NE741 NE74113 2SC*1365 NE74100 NE74114
    Text: N E C / C A L IF O R N I A Sb E NEC D b4S74m ÜGQ547Ö b S l H N E C C NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR T *^ "3 > -0 £ > OUTLINE DIMENSIONS FEATURES Unita In mm NE74100 (CHIP) • H IG H GAIN BAN DW IDTH P R O D U C T : fr = 1.7 GHz


    OCR Scan     		b4274m 0G0547Ã NE74100 NE74113 NE74114 NE741 NE74100) NE74114 2SC1365 2SC1252 2SC*1365 PDF

    transistor k 265

    Abstract: NE64700
    Text: K-BAND BIPOLAR OSCILLATOR TRANSISTOR NE64700 OUTLINE DIMENSIONS Units in jun FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64700 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES Bonding Area ELECTRICAL CHARACTERISTICS ( t a - 25-cj


    OCR Scan     		NE64700 25-cj NE64700 IS12S21I transistor k 265 PDF