VN2410L
Abstract: 70204 TN2410L VN2406D VN2406L VN2410LS
Text: TN2410L, VN2406D/E, VN2410L/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN2410L VN2406D rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V
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TN2410L,
VN2406D/E,
VN2410L/LS
VN2406D
TN2410L
VN2410L
VN2410LS
VN2406L
S-58620--Rev.
21-Jun-99
VN2410L
70204
TN2410L
VN2406D
VN2406L
VN2410LS
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Untitled
Abstract: No abstract text available
Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2410L
VN2406L
VN2410M
VN2406M
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VN2406D
Abstract: vn2410 2406L 2410L TN2410L VN2406L VN2410L VN2410LS vishay siliconix code marking Siliconix TO-92S
Text: TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2
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TN2410L,
VN2406D/L,
VN2410L/LS
TN2410L
VN2406D
VN2410L
VN2410LS
VN2406L
18-Jul-08
VN2406D
vn2410
2406L
2410L
TN2410L
VN2406L
VN2410L
VN2410LS
vishay siliconix code marking
Siliconix TO-92S
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VN2410M
Abstract: VN2406D VN2406L VN2406M VN2410L TN2410L VN2410* mosfet tn2410 siliconix to-18
Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2410L
VN2406L
VN2410M
VN2406M
VN2406D
VN2410M
VN2406M
VN2410L
TN2410L
VN2410* mosfet
tn2410
siliconix to-18
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VN2410M
Abstract: TN2410L VN2406D VN2406L VN2406M VN2410L vn2406
Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 VN2406L 6 @ VGS = 10 V 0.8 to 2
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2410L
VN2406L
VN2410M
VN2406M
VN2406D
VN2410M
TN2410L
VN2406M
VN2410L
vn2406
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TN2410L
Abstract: VN2406D VN2406L VN2406M VN2410L VN2410M
Text: TN2410L, VN2406/2410 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Number rDS on Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2406L
VN2406M
VN2410L
VN2410M
TN2410L
VN2406D
VN2406L
VN2406M
VN2410L
VN2410M
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tn2010l
Abstract: TN2010 TN201
Text: BW 5P& TN201 OL, TN241 OL N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BRJDSS PART NUMBER 'X ' •d (A) TN2010L 200 10 0.18 TN2410L 240 10 0.18 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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TN201
TN241
O-226AA)
TN2010L
TN2410L
VNDB24
TN2010
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VNDB24
Abstract: TN201 VN2406L
Text: VNDB24 N-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-220 • VN2406D Single TO-92 TO-226AA • VN2406L, TN201 OL, TN2410L Single TO-237 • VN2406M Single Chip • Available as VNDB1CHP DEVICE TYPICAL CHARACTERISTICS 1 2 3 4 5 V DS (V) 1 2 V GS (V)
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VNDB24
O-220
O-226AA)
O-237
VN2406D
VN2406L,
TN201
TN2410L
VN2406M
VNDB24
VN2406L
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VN2410M
Abstract: VN2410L VN2410
Text: ^Sifconix S S 2 ‘ ~ ìn Gt VN2410 SERIES N-Channel Enhancem ent-M ode MOS Transistors PRODUCT SUMMARY TO-92 PART NUMBER V 8R DSS rDS(ON) (Í1) (V) BOTTOM VIEW <D (A) PACKAGE VN241QL 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 (See Section 7)
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VN2410
VN2410L
VN2410M
O-237
VNDB24
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TN2010L
Abstract: No abstract text available
Text: .Zf in c o rp o ra te d VNDB1 DIE N-Channel Enhancement-Mode MOS Transistor V N D B 1C H P * TN2010L TN2410L VN2406D/L/M VN2410L/M ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves VNDB24.
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TN2010L
TN2410L
VN2406D/L/M
VN2410L/M
VNDB24.
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VN2406M
Abstract: VN2406L
Text: VN2406 SERIES N-Channel Enhancement-Mode MOS Transistors V BR DSS o (V) r DS(ON) (n ) (A) PACKAGE VN2406D 240 6 1.12 TO-220 VN2406L 240 6 0.22 TO-92 VN2406M 240 6 0.25 TO-237 Performance Curves: VNDB24 TO-237 FRONT VIEW TO-220 PRODUCT SUMMARY PART NUMBER
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VN2406
VN2406D
VN2406L
VN2406M
O-220
O-220
O-237
VNDB24
O-237
O-226AA)
VN2406M
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VN2410M
Abstract: VN2410L
Text: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237
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VN2410
O-226AA)
VN2410L
VN2410M
O-237
O-237
VNDB24
VN2410L
VN2410M
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Siliconix TO-92S
Abstract: No abstract text available
Text: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V
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TN2410L,
VN2406D/L,
VN241
TN2410L
VN2406D
VN2406L
VN2410L
VN2410LS
S-04279--
16-Jul-01
Siliconix TO-92S
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VN1710M
Abstract: VN1710L VN1710
Text: 1 IflE D SILICONIX INC • VN1710 SERIES f ï " Silicor. Silico n ix JLM A254735 OGlMDib 5 iincc n c o rp o ra te d N-Channel Enhancem ent-M ode M O S Transistors "T-Z'7-2. S PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS r DS(ON) (fi) (V) Id (A) PACKAGE VN1710L
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VN1710
VN1710L
VN1710M
O-237
VNDB24
300Ms
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hh 004 TO92
Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
hh 004 TO92
VN2406M
VN2406L
vn1710m
VN1206M
VN1706M
VN2406B
siliconix VN10KM
VN2410M
VN1206L
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RELAY 1ZS
Abstract: VN1706D IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 // 1 / 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
RELAY 1ZS
VN1706D
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
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1256C
Abstract: VN1706B VN1706D VN1706
Text: • LAE D SILICONIX INC S254735 0014012 A ■ VN1706B, VN1706D G T 'S S ilic ilicoont . ix_ ¡i c o rp o ra te d in N-Channel Enhancement-Mode MOS Transistors T-3ft-os PRODUCT SUMMARY PART NUMBER TO-2Q5AD TO-39 V(BR)DSS ros (ON) (n ) (V) Id (A) PACKAGE
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VN1706B
O-205AD
VN1706D
O-220
VNDB24
VN1706B,
VN1706D
1256C
VN1706
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Untitled
Abstract: No abstract text available
Text: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M Product Summary P a rt N um ber r DS on M a x (Q ) V c s « h )(V ) I d (A ) TN2410L 10 @ V cs = 4.5V 0.5 to 1.8 0.18 VN2406D 6 @ VGs = 10 V
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TN2410L,
VN2406/2410
TN2410L
YN2406D
VN2410L
VN2406L
VN2410M
VN2406M
VN2406D
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VN2410M
Abstract: VN1210M siliconix VN10KM vn10le VN1710m BSR70 BSR72 BSR76 VN1210L VN1710L
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25 0.25 0.7 1.0 1.0 1.0
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
VN2410M
VN1210M
siliconix VN10KM
vn10le
VN1710m
BSR70
BSR72
BSR76
VN1210L
VN1710L
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IRF450 to-92
Abstract: VN2406M siliconix VN10KM VN2410M IRF340 IRF350 IRF440 IRF450 VN1210L IRF820
Text: Ü Ü A C D ^ U /C D M i v i a D r/\W i i v i v ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I BV qss Volts 45 0-500 TO-3 TO-220 S ilic o n ix
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to-220
to-39
to-237
to-92
to-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
IRF450 to-92
VN2406M
siliconix VN10KM
VN2410M
IRF340
IRF350
VN1210L
IRF820
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VN1706m
Abstract: VN1706L
Text: SILICONIX INC 1ÖE D • ÖSS473S Q014CH4 1 ■ VN1706L, VN1706M f X S ilic o n ix J J f incorporated N-Channel Enhancem ent-M ode M OS Transistors T-2-7-Z5' PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS fDS(ON) (V) ( Í1 ) >d (A) PACKAGE VN1706L 170 6 0.22 TO-92
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SS473S
Q014CH4
VN1706L,
VN1706M
VN1706L
O-237
VNDB24
VN1706m
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BSS89
Abstract: BSS89/D
Text: IfiE j> SILICONIX INC m Ö2S4735 0014043 b ÆTi?c_onix • « BSS89 incorporated N-Channel Enhancem ent-M ode MOS Transistor T-2J7-ZS PRODUCT SUMMARY BOTTOM VIEW TO-92-18 V BR DSS (V) TDS(ON) (fl) Id (A) PACKAGE 200 6 0.3 TO-92 CD 1 GATE 2 DRAIN 3 SOURCE
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2S4735
BSS89
O-92-18
VNDB24
BSS89
BSS89/D
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Untitled
Abstract: No abstract text available
Text: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D
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TN2410L,
VN2406/2410
TN2410L
VN2406D
VN2410L
VN2406L
VN2410M
VN2406M
VN2406D
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VN1710m
Abstract: VN64GA VN2406D IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Text: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *200°C RATING Packages: I BV qss Volts 450-500 TO -3 T O -2 20 S ilic o n ix
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to-220
to-39
to-237
to-92
to-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
VN1710m
VN64GA
VN2406D
IRF340
IRF350
IRF740
IRF820
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