Untitled
Abstract: No abstract text available
Text: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) Abbreviated symbol : Z7 2.0 1.3 0.9 0.7 0.1Min. ROHM : EMT6 0.65 (1) 2.1 0to0.1 Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor (2)
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2SA2018
2SC5585
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) Abbreviated symbol : Z7 0to0.1 2.0 1.3 0.9 0.7 0.15 2.1 0.1Min. ROHM : EMT6 0.65 (2) 1.25 Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor
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2SA2018
2SC5585
SC-88
R1120A
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PDF
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2SA2018
Abstract: 2SC5585 2SA20
Text: EMZ7 / UMZ7N Transistors General purpose transistor dual transistors EMZ7 / UMZ7N ! External dimensions (Units : mm) ROHM : EMT6 Abbreviated symbol : Z7 EMZ7 / UMZ7N (3) (2) (1) Tr1 Tr2 (4) (5) (6) ! Absolute maximum ratings (Ta = 25°C) Parameter Symbol
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120mW
2SA2018
2SC5585
2SA20
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PDF
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Untitled
Abstract: No abstract text available
Text: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) 1.25 Abbreviated symbol : Z7 0to0.1 2.0 1.3 0.9 0.7 0.15 2.1 0.1Min. ROHM : EMT6 0.65 (1) (6) (1) Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor
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Original
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2SA2018
2SC5585
R1120A
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PDF
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transistor z9
Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package
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RT240PD
40dBm
14GHz
900MHz
IMT-2000
RT240PD
IMT-2000,
14iminary
transistor z9
transistor Z2
cdma repeater circuit
TRANSISTOR Z4
B 1449 transistor
transistor z5
RT240
gsm wcdma repeater
1608 B 100NF
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PDF
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imd 5210
Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
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Original
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MRF282SR1
MRF282ZR1
imd 5210
MJD310
RE65G1R00
MJD320
MALLORY VARIABLE CAPACITORS
GX-0300-55-22
Arlon
transistor z9
GX0300
27291SL
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PDF
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RCA-2N2102
Abstract: 2n2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457
Text: SOLID STATE Dl DE I 3fl7SDÖl H igh Speed Pow er Transistors- 2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors \ y ^ Z7~f? = - 0017007 T File Number 106 TER M IN AL DESIGNATIONS For Small-Signal Applications
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OCR Scan
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2N1613,
2N2102
2N2102
RCA-2N1613
92CS--
HI92R3
2N1613.
2N2102.
RCA-2N2102
2N1613
2n2102 replacement
rca 2n2102
si2666
2n1613 replacement
transistors BC 457
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PDF
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Untitled
Abstract: No abstract text available
Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and
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OCR Scan
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BF994S
711002b
003407b
OT143
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PDF
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PN222A
Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
Text: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30
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OCR Scan
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bS01130
0D37773
PN3566
PN3641
PN3643
PN4141
PN4142
PN5449
TN2219
O-237
PN222A
2N2222A TO-92
BSR14
2N3904 TO-92 type
PN544
2NS904
MPS6574
NPN transistor 2N2222A in T0-92 package
Transistor 2N2222A
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PDF
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2SA1237
Abstract: 9571 transistor Pc 9571
Text: SANYO SEMICONDUCTOR CORP 35E D 7^707^ u.,jm OOCHläH 7 fâk • Tr2.9~Z7 P N P Epitaxial Planar Silicon C om p osite Transistor 2029A Differential Amp Applications S57C Applications . Differential amp, current mirror, temperature compensator. Features . Excellent in thermal equilibrium and suited for use in differential amp
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OCR Scan
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e17G7b
T-91-20
SC-43
2SA1237
9571 transistor
Pc 9571
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PDF
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175C
Abstract: IT130 IT130A IT131 IT132 XIT130 XIT131 TO-71 transistor 5V110
Text: IT130 —IT132 CALOGIC CORP üAE ]> • 1ÔMM3S5 ÜGGG3b3 4 m C G C _ calori« Monolithic Dual PNP General Purpose Amplifier CORPORATION V 'TJZm 7-Z7 IT130-IT132 A B S O L U T E MAXIMUM RATING S Ta = 25°C unless otherwise specified
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OCR Scan
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IT130-IT132
10jiA,
175C
IT130
IT130A
IT131
IT132
XIT130
XIT131
TO-71 transistor
5V110
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PDF
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MPS6519
Abstract: MPS6517 MPS6518 MPS6513 MPS6515
Text: MPS6517 MPS6518 MPS6519 SbE PHILIPS INTERNATIONAL TllOÔEb J> DDMSSDO Ö01 PHIN T-Z7-2J AMPLIFIER TRANSISTOR General purpose p-n-p transistors in T O -92 envelopes. The complementary types are M PS6513 to MPS6515. Q U IC K R E F E R E N C E D A T A M PS6517
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OCR Scan
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MPS6517
MPS6518
MPS6519
MPS6513
MPS6515.
U9B01S
NECC-C-002
10iiA
MPS6519
MPS6515
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PDF
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BDT63
Abstract: transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A
Text: J PHILIPS INTERNATIONAL SbE D BDT63; 63A BDT63B; 63C 711Dfl2fc. 004355^ TT T • ■ PH IN T-JJ-Z7 SILICON DARLINGTON POWER TRANSISTORS N -P-N ep itaxial base transistors in m o n o lith ic D arling to n c irc u it fo r audio o u tp u t stages and general
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OCR Scan
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BDT63;
BDT63B;
711DflHh
T0-220
BDT62,
BDT62A;
BDT62B
BDT62C.
BDT63
transistor 1BT
BDT63B
M32T
BDT63C
transistor 1BT 12
bdt63a
Complementary Darlington Audio Power Amplifier
BDT62
BDT62A
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PDF
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T2721
Abstract: BFX87 BFX88 1N916 199Q silicon planar epitaxial transistors 2721
Text: BFX87 BFX88 ?'.JILIPS I N T E R N A T I O N A L 5bE D • TllDÖEti DGMEESÖ "]Ö5 ■ P H I N 7-Z7-21 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in TO-39 metal envelopes for general industrial applications. QUICK R EFER EN C E DATA ' Collector-base voltage open emitter
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OCR Scan
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BFX87
BFX88
GM225Ã
T2721
BFX88
1N916
199Q
silicon planar epitaxial transistors
2721
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PDF
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2SA1633
Abstract: 2SC4278
Text: h Z7> y 7 .2 /Transistors 2SA1633 2SA1633 I t f ^ = r '> 7 ^ 7 ° U - t ^ P N P h ÿ > y * $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • 1 5 rliilS l/D im en sio ns Unit : mm) ,Q T cfc •£> o I6 0 ^3.3 ± 0 .1 BV cEO = — 150V 5.0 * § 'f
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OCR Scan
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2SA1633
2SC4278
O-247
2SA1633
2SC4278
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PDF
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max 1786a
Abstract: 2SB1120 SANYO 1786A
Text: SANY O S E M I C O N D U C T O R CORP 22E 1> 7 cH 7 0 7 b OOD71bS 4 T-Z7-/3 2SB1120 % PNP Epitaxial Planar Silicon Transistor 2030 High-Current Driver Applications 1786A Applications . Strobes, voltage regulators, relay drivers, lamp drivers. Features . Low collector-to-emitter saturation volage VcE(sat max=_0,i, v ^
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OCR Scan
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1707b
00071t
2SB1120
250mm3
max 1786a
SANYO 1786A
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PDF
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transistor Z2
Abstract: z3 transistor transistor z3 Z7 transistor 8 bit barrel shifter transistor z5
Text: CFCIOOIA CFCIOOIA CFCIOOIA 8-bit Barrel Shifter DESCRIPTION: CFCIOOIA performs an 8-bit end-around shift, which is known as a barrel shift. There are three control lines SI, S2, and S4 to determine how many places to the left the 8-bit inputs (R7 through RO) will be shifted at the outputs (Z7
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OCR Scan
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PDF
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2222KM
Abstract: vn2222l 3FS10
Text: SILICONIX IflE D INC • 1 7 Sinilic o r. n ix c o r p o r a te d J êM S2S473S 0014100 3 ■ VN2222KM, VN2222L il N-Channel Enhancem ent-M ode M O S Transistors T-Z7-23 PRODUCT SUMMARY TO-92 PART NUMBER B O T T O M VIEW V BR DSS rDS(ON) (V) (n) (A) PACKAGE
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OCR Scan
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S2S473S
VN2222KM,
VN2222L
VN2222KM
T-Z7-23
O-237
VNDP06
O-237
2222KM
vn2222l
3FS10
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PDF
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BF994S marking code
Abstract: BF994S MOSFET Tetrode
Text: J PHILIPS INTERNATIONAL SbE D BF994S 711002t. 0 0 3 4 0 7 b T1S • PHIN FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR D ATASHEET T -? jr-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in aplasticSOT143 m icrom iniature envelope w ith source and
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OCR Scan
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BF994S
711002b
00341117b
OT143
BF994S marking code
BF994S
MOSFET Tetrode
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D S E C T O R 27E D B 4 3 0 2 2 7 1 0 D l S 7 n? ? IHAS V-Z7-ZST -3 /-Z 5 Differential Amplifier Transistors — Monolithic Duals Junction FETs — N-Channel Vqsi-2 AVg s Vp V *G pA Max SVqss V Min Min Max Min Max Min Max -50 -50 -50 -50
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OCR Scan
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200ftA
2N5912
2N6483
2N6484
2N6485
IT500
IT501
IT502
IT503
IT504
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PDF
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2SD1661
Abstract: A1314 transistor AGEV 1A
Text: h Z7> is 7 .2 /Transistors 2SD1661M /2SD 1866 y ' j 3 > 2 S D 1 6 6 2 S D 1 8 6 1 b 7 > y z $ M Epitaxial Planar NPN Silicon Transistor Darlington i 2 — K 7 'i ' • U U — K 7 -f ^ /Motor, Relay Drive. 6 • fl-ffivliâE I/D im ensio n s (Unit: mm) • « ft
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OCR Scan
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2SD1661M
2SD1661M
2SD1866
2SD1661M/2SD1866
2SD1661
A1314 transistor
AGEV 1A
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PDF
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2SB1212
Abstract: 2SD1812 transistor 2Sb1212
Text: 2SB1212 / T ransistors h Z7 > y 2SB1212 X t f ^ d r V 7 ^ 7 ° U - ^ P N P '> U = I> Power Amp. Epitaxial Planar PNP Silicon Transistor • W f ^ jiH /D im e n s io n s Unit : mm 1) ¡ S f if f i? < 6 > 3 (B V c e o = - 1 6 0 V ) o 2 )A S O tf£ < , 3) C o b *^ J ^ t'o
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OCR Scan
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2SB1212
2SD1812
T0-92L
SC-51
2SB1212
transistor 2Sb1212
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PDF
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2N869A
Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
Text: MO T O R O L A SC X S TR S/ R F 12E D | b3b72S4 Q O Ö b a S 1» T-Z7-IS 2N869A M A X IM U M R A T IN G S R ating C o llector-E m itter Voltage Sym bol 2N869A 2N4453 U n it VcEO 18 18 Vdc Vdc 25 C o llector-E m itter Voltage VcES Collector-Base Voltage V cB O
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OCR Scan
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b3b72S4
2N869A
2N869A
2N4453
2N4453
2N869A JAN
2N869A JANTX
TO206AA
313 Motorola
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PDF
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Untitled
Abstract: No abstract text available
Text: HA RR IS S E M I C O N D SE CT OR 3Q H SfiE D A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H • M 3 Q E 27 1 D O M S b T H ÖTT H H A S ZN/Z7ÖU, 2N7278H 2N7278H Radiation Hardened N-Channel Power MOSFETs December 1992
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OCR Scan
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FRL234
2N7278H
2N7278H
100KRAD
300KRAD
1000KRAD
3000KRAD
430B571
2N7278D,
2N7278R,
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PDF
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