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    Z7 TRANSISTOR Search Results

    Z7 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    Z7 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) Abbreviated symbol : Z7 2.0 1.3 0.9 0.7 0.1Min. ROHM : EMT6 0.65 (1) 2.1 0to0.1 Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor (2)


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    2SA2018 2SC5585 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) Abbreviated symbol : Z7 0to0.1 2.0 1.3 0.9 0.7 0.15 2.1 0.1Min. ROHM : EMT6 0.65 (2) 1.25 Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor


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    2SA2018 2SC5585 SC-88 R1120A PDF

    2SA2018

    Abstract: 2SC5585 2SA20
    Text: EMZ7 / UMZ7N Transistors General purpose transistor dual transistors EMZ7 / UMZ7N ! External dimensions (Units : mm) ROHM : EMT6 Abbreviated symbol : Z7 EMZ7 / UMZ7N (3) (2) (1) Tr1 Tr2 (4) (5) (6) ! Absolute maximum ratings (Ta = 25°C) Parameter Symbol


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    120mW 2SA2018 2SC5585 2SA20 PDF

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor dual transistors EMZ7 / UMZ7N Dimensions (Unit : mm) 1.25 Abbreviated symbol : Z7 0to0.1 2.0 1.3 0.9 0.7 0.15 2.1 0.1Min. ROHM : EMT6 0.65 (1) (6) (1) Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor


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    2SA2018 2SC5585 R1120A PDF

    transistor z9

    Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
    Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package


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    RT240PD 40dBm 14GHz 900MHz IMT-2000 RT240PD IMT-2000, 14iminary transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF PDF

    imd 5210

    Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL PDF

    RCA-2N2102

    Abstract: 2n2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457
    Text: SOLID STATE Dl DE I 3fl7SDÖl H igh Speed Pow er Transistors- 2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors \ y ^ Z7~f? = - 0017007 T File Number 106 TER M IN AL DESIGNATIONS For Small-Signal Applications


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    2N1613, 2N2102 2N2102 RCA-2N1613 92CS-- HI92R3 2N1613. 2N2102. RCA-2N2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and


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    BF994S 711002b 003407b OT143 PDF

    PN222A

    Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
    Text: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30


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    bS01130 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 O-237 PN222A 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A PDF

    2SA1237

    Abstract: 9571 transistor Pc 9571
    Text: SANYO SEMICONDUCTOR CORP 35E D 7^707^ u.,jm OOCHläH 7 fâk • Tr2.9~Z7 P N P Epitaxial Planar Silicon C om p osite Transistor 2029A Differential Amp Applications S57C Applications . Differential amp, current mirror, temperature compensator. Features . Excellent in thermal equilibrium and suited for use in differential amp


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    e17G7b T-91-20 SC-43 2SA1237 9571 transistor Pc 9571 PDF

    175C

    Abstract: IT130 IT130A IT131 IT132 XIT130 XIT131 TO-71 transistor 5V110
    Text: IT130 IT132 CALOGIC CORP üAE ]> • 1ÔMM3S5 ÜGGG3b3 4 m C G C _ calori« Monolithic Dual PNP General Purpose Amplifier CORPORATION V 'TJZm 7-Z7 IT130-IT132 A B S O L U T E MAXIMUM RATING S Ta = 25°C unless otherwise specified


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    IT130-IT132 10jiA, 175C IT130 IT130A IT131 IT132 XIT130 XIT131 TO-71 transistor 5V110 PDF

    MPS6519

    Abstract: MPS6517 MPS6518 MPS6513 MPS6515
    Text: MPS6517 MPS6518 MPS6519 SbE PHILIPS INTERNATIONAL TllOÔEb J> DDMSSDO Ö01 PHIN T-Z7-2J AMPLIFIER TRANSISTOR General purpose p-n-p transistors in T O -92 envelopes. The complementary types are M PS6513 to MPS6515. Q U IC K R E F E R E N C E D A T A M PS6517


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    MPS6517 MPS6518 MPS6519 MPS6513 MPS6515. U9B01S NECC-C-002 10iiA MPS6519 MPS6515 PDF

    BDT63

    Abstract: transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A
    Text: J PHILIPS INTERNATIONAL SbE D BDT63; 63A BDT63B; 63C 711Dfl2fc. 004355^ TT T • ■ PH IN T-JJ-Z7 SILICON DARLINGTON POWER TRANSISTORS N -P-N ep itaxial base transistors in m o n o lith ic D arling to n c irc u it fo r audio o u tp u t stages and general


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    BDT63; BDT63B; 711DflHh T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A PDF

    T2721

    Abstract: BFX87 BFX88 1N916 199Q silicon planar epitaxial transistors 2721
    Text: BFX87 BFX88 ?'.JILIPS I N T E R N A T I O N A L 5bE D • TllDÖEti DGMEESÖ "]Ö5 ■ P H I N 7-Z7-21 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in TO-39 metal envelopes for general industrial applications. QUICK R EFER EN C E DATA ' Collector-base voltage open emitter


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    BFX87 BFX88 GM225Ã T2721 BFX88 1N916 199Q silicon planar epitaxial transistors 2721 PDF

    2SA1633

    Abstract: 2SC4278
    Text: h Z7> y 7 .2 /Transistors 2SA1633 2SA1633 I t f ^ = r '> 7 ^ 7 ° U - t ^ P N P h ÿ > y * $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • 1 5 rliilS l/D im en sio ns Unit : mm) ,Q T cfc •£> o I6 0 ^3.3 ± 0 .1 BV cEO = — 150V 5.0 * § 'f


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    2SA1633 2SC4278 O-247 2SA1633 2SC4278 PDF

    max 1786a

    Abstract: 2SB1120 SANYO 1786A
    Text: SANY O S E M I C O N D U C T O R CORP 22E 1> 7 cH 7 0 7 b OOD71bS 4 T-Z7-/3 2SB1120 % PNP Epitaxial Planar Silicon Transistor 2030 High-Current Driver Applications 1786A Applications . Strobes, voltage regulators, relay drivers, lamp drivers. Features . Low collector-to-emitter saturation volage VcE(sat max=_0,i, v ^


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    1707b 00071t 2SB1120 250mm3 max 1786a SANYO 1786A PDF

    transistor Z2

    Abstract: z3 transistor transistor z3 Z7 transistor 8 bit barrel shifter transistor z5
    Text: CFCIOOIA CFCIOOIA CFCIOOIA 8-bit Barrel Shifter DESCRIPTION: CFCIOOIA performs an 8-bit end-around shift, which is known as a barrel shift. There are three control lines SI, S2, and S4 to determine how many places to the left the 8-bit inputs (R7 through RO) will be shifted at the outputs (Z7


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    PDF

    2222KM

    Abstract: vn2222l 3FS10
    Text: SILICONIX IflE D INC • 1 7 Sinilic o r. n ix c o r p o r a te d J êM S2S473S 0014100 3 ■ VN2222KM, VN2222L il N-Channel Enhancem ent-M ode M O S Transistors T-Z7-23 PRODUCT SUMMARY TO-92 PART NUMBER B O T T O M VIEW V BR DSS rDS(ON) (V) (n) (A) PACKAGE


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    S2S473S VN2222KM, VN2222L VN2222KM T-Z7-23 O-237 VNDP06 O-237 2222KM vn2222l 3FS10 PDF

    BF994S marking code

    Abstract: BF994S MOSFET Tetrode
    Text: J PHILIPS INTERNATIONAL SbE D BF994S 711002t. 0 0 3 4 0 7 b T1S • PHIN FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR D ATASHEET T -? jr-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in aplasticSOT143 m icrom iniature envelope w ith source and


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    BF994S 711002b 00341117b OT143 BF994S marking code BF994S MOSFET Tetrode PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS S E M I C O N D S E C T O R 27E D B 4 3 0 2 2 7 1 0 D l S 7 n? ? IHAS V-Z7-ZST -3 /-Z 5 Differential Amplifier Transistors — Monolithic Duals Junction FETs — N-Channel Vqsi-2 AVg s Vp V *G pA Max SVqss V Min Min Max Min Max Min Max -50 -50 -50 -50


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    200ftA 2N5912 2N6483 2N6484 2N6485 IT500 IT501 IT502 IT503 IT504 PDF

    2SD1661

    Abstract: A1314 transistor AGEV 1A
    Text: h Z7> is 7 .2 /Transistors 2SD1661M /2SD 1866 y ' j 3 > 2 S D 1 6 6 2 S D 1 8 6 1 b 7 > y z $ M Epitaxial Planar NPN Silicon Transistor Darlington i 2 — K 7 'i ' • U U — K 7 -f ^ /Motor, Relay Drive. 6 • fl-ffivliâE I/D im ensio n s (Unit: mm) • « ft


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    2SD1661M 2SD1661M 2SD1866 2SD1661M/2SD1866 2SD1661 A1314 transistor AGEV 1A PDF

    2SB1212

    Abstract: 2SD1812 transistor 2Sb1212
    Text: 2SB1212 / T ransistors h Z7 > y 2SB1212 X t f ^ d r V 7 ^ 7 ° U - ^ P N P '> U = I> Power Amp. Epitaxial Planar PNP Silicon Transistor • W f ^ jiH /D im e n s io n s Unit : mm 1) ¡ S f if f i? < 6 > 3 (B V c e o = - 1 6 0 V ) o 2 )A S O tf£ < , 3) C o b *^ J ^ t'o


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    2SB1212 2SD1812 T0-92L SC-51 2SB1212 transistor 2Sb1212 PDF

    2N869A

    Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
    Text: MO T O R O L A SC X S TR S/ R F 12E D | b3b72S4 Q O Ö b a S 1» T-Z7-IS 2N869A M A X IM U M R A T IN G S R ating C o llector-E m itter Voltage Sym bol 2N869A 2N4453 U n it VcEO 18 18 Vdc Vdc 25 C o llector-E m itter Voltage VcES Collector-Base Voltage V cB O


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    b3b72S4 2N869A 2N869A 2N4453 2N4453 2N869A JAN 2N869A JANTX TO206AA 313 Motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: HA RR IS S E M I C O N D SE CT OR 3Q H SfiE D A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H • M 3 Q E 27 1 D O M S b T H ÖTT H H A S ZN/Z7ÖU, 2N7278H 2N7278H Radiation Hardened N-Channel Power MOSFETs December 1992


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    FRL234 2N7278H 2N7278H 100KRAD 300KRAD 1000KRAD 3000KRAD 430B571 2N7278D, 2N7278R, PDF