Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXFK 180N07 IXFX 180N07 HiPerFETTM Power MOSFETs RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM 70 70 V V Continuous Transient ±20 ±30 V
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180N07
180N07
247TM
O-264
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180N07
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 180N07 IXFX 180N07 VDSS ID25 RDS on Single MOSFET Die = 70 V = 180 A Ω = 6 mΩ trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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180N07
728B1
180N07
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fast IXFX
Abstract: 180N07
Text: HiPerFETTM Power MOSFETs IXFK 180N07 IXFX 180N07 VDSS ID25 RDS on Single MOSFET Die = 70 V = 180 A Ω = 6 mΩ trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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180N07
728B1
fast IXFX
180N07
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N07 IXFX 180N07 VDSS ID25 RDS on Single MOSFET Die = 70 V = 180 A = 6 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS
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180N07
180N07
247TM
O-264
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180N07
Abstract: ISOPLUS247
Text: HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 Electrically Isolated Back Surface VDSS = 70 V ID25 = 180 A RDS(on) = 6 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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180N07
ISOPLUS247
247TM
180N07
ISOPLUS247
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180N07
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N07 IXFX 180N07 VDSS ID25 RDS on Single MOSFET Die = 70 V = 180 A = 6 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS
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180N07
247TM
O-264
180N07
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 Electrically Isolated Back Surface VDSS = 70 V ID25 = 180 A 6 mW RDS(on) = trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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180N07
ISOPLUS247
250UTLINE
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 Electrically Isolated Back Surface VDSS = 70 V ID25 = 180 A RDS(on) = 6 mW Single MOSFET Die trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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180N07
ISOPLUS247
247TM
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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IXFN180
Abstract: 200N06
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability
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200N06/200N07
180N07
IXFN180
150OC
100OC
IXFN180
200N06
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C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1146
C1162
C1278
C1106
C1156
ixfh 60N60
C1142
c1238
C1104
ixfn 26n60
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200N07
Abstract: 180N07 200N06 BT 1496
Text: HiPerFETTM Power MOSFETs VDSS Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient N07 N06 N07 N06 ID25 A TC= 25°C ID130 IDM IAR TC= 130°C, limited by external leads TC= 25°C, pulse width limited by TJM
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ID130
200N06/200N07
180N07
200N07
200N06
BT 1496
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Untitled
Abstract: No abstract text available
Text: AdvancedTechnical Information IXFR 180N07 HiPerFET Power MOSFETs ISOPLUS247™ 70 V 180 A DSS I D25 P 6 m il DS on (Electrically Isolated Back Surface) < t 250 ns Single M O SFET Die «9 Maximum Ratings Symbol Test Conditions V Tj =25°Cto150°C Tj = 25° C to 150° C; RQS= 1 M£2
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ISOPLUS247TM
180N07
Cto150
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Untitled
Abstract: No abstract text available
Text: nixYS Advanced Technical Information HiPerFET Power MOSFETs IXFK 180N07 IXFX 180N07 V DSS 70 180 ^D25 6 mQ RDS on Single MOSFET Die trr <250 ns Symbol Test Conditions V Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 M£2 Maximum Ratings 70 70 V V Continuous
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IXFK180N07
IXFX180N07
Cto150
PLUS247TM
O-264
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs IX F K 1 8 0 N 0 7 V,DSS = 70 IX F X 1 8 0 N 0 7 ' D25 = 180 6 mQ DS on Single MOSFET Die t rr < 250 ns Maximum Ratings Symbol TestC onditions V v DGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i
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Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs ix f n 200N07 Maximum Ratings Tj = 25° C to 150° C Tj = 25°C to 150°C; RGS= 1 Mi2 Va, VGSM ^0130 U EAR 70 70 V V Continuous Transient ±20 ±30 V V Tc= 25° C Tc= 130° C, limited by external leads Tc= 25° C, pulse width limited by TJM
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200N07
OT-227
E153432
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET Power MOSFETs IXFN 200 N06 IXFN180 N07 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, L ow trr Symbol N07 N06 N07 N06 70 60 70 60 V V V V Continuous ±20 V Transient ±30 V 180 A Td = 25°C to 150°C; RGS = 1 M ß
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IXFN180
E153432
200N06/200N07
180N07
200N06
180N07
200N07
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52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
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76N06-11
76N07-11
76N07-12
67N10
75N10
50N20
58N20
74N20
80N20
35N30
52N30
20n80
ixfh 60N60
IXFX 44N80
15n10
7n80
E51G
44N80
60n60
46N50
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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67N10
75N10
75N10Q
80N10Q
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
C1218
C1222
ixfh 60N60
IXFX 44N80
C1138
C1238
20n80
C1228
C1172
IXFN 230N10 230N10
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