IXGH24N60B
Abstract: RG10
Text: HiPerFASTTM IGBT IXGH 24N60B VCES IC25 VCE sat tfi = = = = 600 48 2.3 80 V A V ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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24N60B
O-247
728B1
IXGH24N60B
RG10
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Untitled
Abstract: No abstract text available
Text: High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE sat tfi typ = 600 V = 48 A = 2.5 V = 170 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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24N60B
24N60BD1
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 24N60B VCES IC25 VCE sat tfi = = = = 600 48 2.3 80 V A V ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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24N60B
O-247
728B1
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24N60B
Abstract: No abstract text available
Text: High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE sat tfi typ = 600 V = 48 A = 2.5 V = 170 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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24N60B
24N60BD1
-55E1
728B1
24N60B
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Untitled
Abstract: No abstract text available
Text: IXSP 24N60B High Speed IGBT VCES = 600 V = 48 A IC25 VCE sat = 2.5 V Short Circuit SOA Capability tfi typ = 170 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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24N60B
O-220
728B1
123B1
728B1
065B1
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IXGH 24N60BU1
Abstract: diode 931 p 7 IXGH24N60BU1
Text: HiPerFASTTM IGBT with Diode IXGH 24N60BU1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V = 600 V = 48 A = 2.3 V = 80 ns Maximum Ratings VGEM Transient ±30 V IC25 TC = 25°C 48 A
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24N60BU1
O-247
728B1
IXGH 24N60BU1
diode 931 p 7
IXGH24N60BU1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Speed IGBT Short Circuit SOA Capability IXSH 24N60B VCES = 600 V IXST 24N60B IC25 = 48 A VCE sat = 2.5 V tfi typ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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24N60B
O-247
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Untitled
Abstract: No abstract text available
Text: High Speed IGBT Short Circuit SOA Capability IXSH 24N60B VCES = 600 V IXST 24N60B IC25 = 48 A VCE sat = 2.5 V tfi typ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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24N60B
O-247
O-268
O-268
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Untitled
Abstract: No abstract text available
Text: IXSP 24N60B High Speed IGBT Short Circuit SOA Capability VCES = 600 V = 48 A IC25 VCE sat = 2.5 V tfi typ = 170 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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24N60B
728B1
123B1
728B1
065B1
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24N60
Abstract: IXGH24N50B IXGH24N60B
Text: HiPerFASTTM IGBT IXGH24N50B 24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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IXGH24N50B
IXGH24N60B
24N50
24N60
O-247
IXGH24N60B
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c2548
Abstract: IXGH24N50BU1 IXGH24N60BU1
Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
O-247
tempera10
IXGH24N50BU1
c2548
IXGH24N60BU1
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W2515
Abstract: IXGH24N50BU1 IXGH24N60BU1
Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
O-247
tempera000
IXGH24N50BU1
W2515
IXGH24N60BU1
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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24N50
Abstract: IXGH24N50BU1 IXGH24N60BU1
Text: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH
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OCR Scan
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24N50BU1
24N60BU1
24N50
24N60
-247A
24N50
IXGH24N50BU1
IXGH24N60BU1
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24N50B
Abstract: IXGH24N50B IXGH24N50BU1 IXGH24N60B IXGH24N60BU1
Text: DIXYS V,CES HiPerFAST IGBT IXGH 24N50B IXGH 24N60B Symbol Maximum Ratine Test Conditions 24N50 Tj =25°C to150°C 500 600 V V CGR Tj = 25°C to 150°C; RG6 = 1 M il 500 600 V v Continuous ±20 V VGEM Transient 30 V C25 Tc = 25°C 48 A Tc = 90°C 24 A
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OCR Scan
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24N50B
24N60B
24N50
24N60
O-247AD
to150
JEDECTO-247
24N60B
IXGH24N50B
IXGH24N50BU1
IXGH24N60B
IXGH24N60BU1
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6G E 2080 diode
Abstract: IXGH24N50BU1 IXGH24N60BU1 24n60
Text: v CES HiPerFAST IGBT with Diode Symbol IXGH24N50BU1/S 24N60BU1/S Maximum Ratings Test Conditions 24N50 Tj = 25“C to 150°C 500 600 V vCGfl vGES vGEM Tj = 25°C to 150°C; RaE = 1 MQ 500 600 V Continuous ±20 V Transient ±30 V ^C25 *C90 ^CM T c = 25°C
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OCR Scan
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IXGH24N50BU1/S
IXGH24N60BU1/S
24N50
24N60
O-247
24NS0BU1
IXGH24W6SU1
24N50BU1
24N60BU1
6G E 2080 diode
IXGH24N50BU1
IXGH24N60BU1
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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OCR Scan
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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OCR Scan
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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SMD diode b24
Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64
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OCR Scan
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12N100
O-220
O-263
O-247
O-247
T0-204
30N30/.
40N30/.
31N60
SMD diode b24
diode b26
smd DIODE B28
20N60BU1
smd diode b23
60n60 igbt smd
B292
12n60c
SMD diode B2
b26 diode
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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OCR Scan
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
32N60BS
40N60A
ixgh 1500
25N120
200n60
60n60 igbt smd
10N60A
30N60A
.25N100
20n60a
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GEM X 365
Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd
Text: Prelim inary data HiPerFAST IGBT IXGH24N50B 24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ
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OCR Scan
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IXGH24N50B
IXGH24N60B
O-247
24N50
24N60
GEM X 365
24N60
zr smd
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.24n50
Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C
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OCR Scan
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IXGH24N50BU1
IXGH24N60BU1
T0-247
24N50
24N60
.24n50
xgh2
IXGH24N60BU1
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PDF
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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OCR Scan
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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