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    2SK113 Search Results

    2SK113 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1133-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK1133-T2B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SK1133(0)-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SK1132-T-A Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
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    2SK113 Price and Stock

    Rochester Electronics LLC 2SK1133(0)-T1B-A

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK1133(0)-T1B-A Bulk 1,803
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    Quest Components 2SK113-R 4
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    Renesas Electronics Corporation 2SK1133(0)-T1B-A

    2SK1133 - Small Signal Field-Effect Transistor, N-Channel MOSFET '
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    Rochester Electronics 2SK1133(0)-T1B-A 9,720 1
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    Renesas Electronics Corporation 2SK1133-T2B-A

    2SK1133 - Small Signal Field-Effect Transistor, N-Channel MOSFET '
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    Rochester Electronics 2SK1133-T2B-A 100 1
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    Renesas Electronics Corporation 2SK1133T1BA

    N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Small Signal Field-Effect Transistor, 0.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA 2SK1133T1BA 11,885
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    2SK113 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK113 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2SK113 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK113 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK113 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK113 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK113 Unknown FET Data Book Scan PDF
    2SK113 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK1131 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK1132 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1132 NEC Semiconductor Selection Guide Original PDF
    2SK1132 NEC N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Scan PDF
    2SK1132 NEC N-Channel MOS FET for High Speed Switching Scan PDF
    2SK1132/JM NEC N-channel MOS FET Scan PDF
    2SK1132-T NEC N-channel MOS FET Scan PDF
    2SK1132-T/JM NEC N-channel MOS FET Scan PDF
    2SK1133 Kexin N-Channel MOSFET for High Speed Switching Original PDF
    2SK1133 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1133 NEC Semiconductor Selection Guide Original PDF
    2SK1133 TY Semiconductor N-Channel MOSFET for High Speed Switching - SOT-23 Original PDF
    2SK1133 NEC N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Scan PDF

    2SK113 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK105 Datasheet

    Abstract: 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


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    2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK105 Datasheet 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201 PDF

    smd transistor g11

    Abstract: marking G11 smd transistor marking 36 2SK1133 5V GATE TO SOURCE VOLTAGE MOSFET VDS50V
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1133 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Not necessary to consider driving current because of 0.4 3 Directly driven by Ics having a 5V power source. 1 Possible to reduce the number of parts by omitting the biasresistor.


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    2SK1133 OT-23 10ut-off smd transistor g11 marking G11 smd transistor marking 36 2SK1133 5V GATE TO SOURCE VOLTAGE MOSFET VDS50V PDF

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


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    2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SK1133 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Not necessary to consider driving current because of 0.4 3 Directly driven by Ics having a 5V power source. 1 Possible to reduce the number of parts by omitting the biasresistor.


    Original
    2SK1133 OT-23 PDF

    2sk152 equivalent

    Abstract: IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363
    Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P


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    2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363 PDF

    2sj165

    Abstract: X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159
    Text: ロード・マップ トランジスタ 機能・用途別(シグナルMOS FET) VDSS - ID DC マップ (4 V 駆動タイプ) VDSS(V) 30 ID(DC)(A) 50 0.1 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 0.2 2SK1582 (5.0 Ω / SC-59) 0.5 2SK679A (1.0 Ω / TO-92)


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    2SK1132 2SJ165 2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) 2sj165 X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159 PDF

    2SK1133

    Abstract: marking Td MOSFET 2SJ166
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK1133 N チャネル MOSFET スイッチング用 2SK1133 は,N チャネル縦型 MOSFET であり,デジタル回 外形図(単位:mm) 路における,高速スイッチング・デバイスとして最適です。


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    2SK1133 2SK1133 2SJ166 SC-59 Cycle50% D17568JJ4V0DS marking Td MOSFET 2SJ166 PDF

    2SK105 DGS

    Abstract: 2SK105 V6010 2sj44
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


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    2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 O-226AA 2SK105 DGS V6010 2sj44 PDF

    2SK146

    Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


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    2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor PDF

    2SK146

    Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44
    Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P


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    2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2SK146 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44 PDF

    SC-59

    Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
    Text: Road map Transistor Function/Application Signal MOS FET VDSS - ID(DC) MAP (4 V Gate-Driven Series) VDSS(V) 30 ID(DC)(A) 50 0.1 0.2 0.5 1.0 1.5 2.0 3.0 (RDS(on)MAX∗/Package) 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 2SK1582 (5.0 Ω / SC-59) 2SK679A


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    2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) 2SJ212 SC-59 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84 PDF

    2SK1133

    Abstract: 2SK113 2SJ166 marking G11
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1133 SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1133, N-channel vertical type MOSFET, is a switching 2.8 ±0.2 0.4 +0.1 –0.05 device which can be driven directly by the output of ICs having a


    Original
    2SK1133 2SK1133, 2SK1133 2SK113 2SJ166 marking G11 PDF

    2SJ166

    Abstract: 2SK1133 diode ir30
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1133 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm


    OCR Scan
    2SK1133 2SK1133, 2SJ166 2SK1133 diode ir30 PDF

    2sk152 equivalent

    Abstract: 2SJ44 2SK113 2SK152
    Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters


    OCR Scan
    2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152 PDF

    Untitled

    Abstract: No abstract text available
    Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit


    OCR Scan
    2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L PDF

    2SK725A

    Abstract: 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953
    Text: COLLMER SEMICONDUCTOR INC 22307^2 ÜÜD1S7Ô 1S3 HfiE D ICOL <§ MOSFETS F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099 2SK725 2SK899


    OCR Scan
    2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK725A 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953 PDF

    2SK11

    Abstract: 2SJ165 2SK1132 50VVGS
    Text: MOS FIELD EFFECT TRANSISTOR 2SK1132 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING The 2SK1132, N-channel vertical type MOS FET, is a sw itching PACKAGE DIMENSIONS Unit : mm device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power source.


    OCR Scan
    2SK1132 2SK1132, 2SK11 2SJ165 2SK1132 50VVGS PDF

    2SK1132

    Abstract: 2SJ165
    Text: N 2SK1132Ü, N ^ * ;H iÉ M O S FET ^ H g S S - f c f c t t - S , i l l X ^ 7 f / 7 f ^ MOS F E T ~V'h 0y"'v , 'i X t L ^ - Ü : mm 4 .0 ± 0.2 Z M M T to 6* u n m O iW j^ K ÿ j ' f V o5 V t ° "y X 9 IC fr b KffiÎBÿiT”ë â to o ffii/C I*]/® ; l - 7 >


    OCR Scan
    2SK1132 2SK1132Ã 2SJ165 IEI-620) Cycled50 2SK1132 PDF

    T03P

    Abstract: 2SK101
    Text: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723


    OCR Scan
    00D1A70 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 T03P 2SK101 PDF

    IFN152

    Abstract: 2SJ44 2SK152 2SK113 2SK363 NJ450 IFP44
    Text: 9 -9 7 E 3 SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Japanese 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 - 20 V 0.1 ( -1 0 V ) 1.0 ( - 30 V)


    OCR Scan
    2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PDF

    2SK956

    Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
    Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099


    OCR Scan
    D1S70 2SK905 2SK1134 T03PF 2SK905A 2SK906 2SK906A 2SK900 T0220 2SK947 2SK956 2sk1005 2SK1015 2SK948 436s 0 280 130 055 2SK726 PDF

    nec D 7520 C

    Abstract: lEI-616 2SJ166 2SK1133
    Text: MOS FIELD EFFECT TRANSISTOR 2SK1133 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1133, N-channel vertical type MOS FET, is a switching device which can be driven d ire ctly by the o u tp u t of ICs having a 5 V power source.


    OCR Scan
    2SK1133 2SK1133, nec D 7520 C lEI-616 2SJ166 2SK1133 PDF

    2SK726

    Abstract: 2SK955 2SK956 2sk94 2SK727 2SK906A 2SK1004 2SK902A 2SK900 2sk1018
    Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099


    OCR Scan
    D1S70 2SK905 2SK1134 T03PF 2SK905A 2SK906 2SK906A 2SK900 T0220 2SK947 2SK726 2SK955 2SK956 2sk94 2SK727 2SK1004 2SK902A 2sk1018 PDF

    2SK1135

    Abstract: No abstract text available
    Text: 2SK1135 MMTbBDS D G 1 3 1 Ô 3 ‘ìfl'ì • H I T H ITACHI/ O P T O E L E C T R O N I C S 4 blE D SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 1. Gate 2. Drain (F lan g e) 3. Source (D im ensiona i ■ FEATURES • Low On-Resistance • High Speed Switching


    OCR Scan
    DG131Ã PWS10/U5. -2SK1135 2SK1135 PDF