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    Fuji Electric Co Ltd 2SK2071-01S-TB16R

    2 A, 600 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET (Also Known As: 2SK2071-01S)
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    Quest Components 2SK2071-01S-TB16R 1,313
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    2SK2071-01S-TB16R 1,313
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    Fuji Electric Co Ltd 2SK2071-01S

    2 A, 600 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2071-01S 85
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    2SK2071 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2071-01L Fuji Electric N-Channel Silicon Power MOS-FET Original PDF
    2SK2071-01L Fuji Electric N-channel MOS-FET Original PDF
    2SK2071-01S Fuji Electric N-Channel Silicon Power MOS-FET Original PDF
    2SK2071-01S Fuji Electric N-channel MOS-FET Original PDF

    2SK2071 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2071-01L

    Abstract: No abstract text available
    Text: 2SK2071-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 6,5Ω 2A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2071-01L

    Untitled

    Abstract: No abstract text available
    Text: 2SK2071-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 5.5 ±0.2 5±0.2 +0.2 00.9 —0.1 0.9 2.5 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power


    Original     		PDF 2SK2071-01L

    Untitled

    Abstract: No abstract text available
    Text: 2SK2071-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 6,5Ω 2A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2071-01L

    2SK2071-01L

    Abstract: No abstract text available
    Text: 2SK2071-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 6,5Ω 2A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2071-01L

    2SK2071-01L

    Abstract: No abstract text available
    Text: 2SK2071-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 5.5 ±0.2 5±0.2 +0.2 0 .9 —0.1 0.9 2.5 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power


    Original     		PDF 2SK2071-01L

    2SK2071-01L

    Abstract: 1A 300V mosfet
    Text: 2SK2071-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 5.5 ±0.2 5±0.2 +0.2 00.9 —0.1 0.9 2.5 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power


    Original     		PDF 2SK2071-01L 1A 300V mosfet

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    2SK2774

    Abstract: 2SK1941-01R 2SK2774-01MR 2SK1936-01
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type ＊2 VGS th Typ. Volts パッケージ Package


    Original     		PDF 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2SK1941-01R 2SK1936-01

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original     		PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018

    2SK2774

    Abstract: 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01


    Original     		PDF 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    2SK2645

    Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
    Text: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)


    Original     		PDF Feb-00 O-220AB 2SK1007 2SK2523 O-220F15 2SK2469 2SK1006 2SK2470 2SK2524 2SK2471 2SK2645 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2071-01L,S N-channel MOS-FET a it e is ir it ìu e FAP-IIA Series 600V > Features - 6 ,5 ß 2A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof


    OCR Scan     		PDF 2SK2071-01L

    a2388

    Abstract: FT5FC 2SK2071-01L 30S3 T151
    Text: 2SK2071-01L. S FUJI POWER MOS-FET N-C HANNEL SILICON POWER MOS-FET FAP-IIA SERIES I features Outline Drawings »High speed switching >Low on-resistance >N:> secondary breakdown »Low driving power 1High voltage ' V ;s- ± 3 0 V Guarantee 1A/alanche-proof I Applications


    OCR Scan     		PDF 2SK2071-01L, a2388 FT5FC 2SK2071-01L 30S3 T151

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01


    OCR Scan     		PDF 2SK2518-01MR 2SK2250-01L 2SK22S1-01 2SK2292-01L 2SK2099-01 2SK2253-01MR 2SK22S2-01L 2SK22S5-01MR 2SK2254-01L 2SK2256-01

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Cha racteristics (M ax.1 ton (ns) toff (ns) ciss(pf) Coss(pf) 20 200 2700 480 115 190 TO-220F15 2 10 2.00 380 80 250 70 105 K-PACK L,S 2.00


    OCR Scan     		PDF O-220F15 O-220 O-22QF15 T6-226F15------------- 2SK2082-01 2SK2771-01R 2SK2004-01 2SK1986-01

    2SK1937

    Abstract: No abstract text available
    Text: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass


    OCR Scan     		PDF 2SK2518-01MR 2SK2918-01MR 2SK2251-01 T0-220F15 O-220AB O-220F15 2SK1937

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan     		PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R

    2sk2255-01mr

    Abstract: 2SK2082 2SK194 2SK1941-01R
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S


    OCR Scan     		PDF 2SK2518-01MR 2SK2250-01L 2SK2251-01 2SK2292-01L 2SK2099-01 2SK2253-01 2SK2252-01L 2SK2255-01 2SK2254-01 2SK2256-01 2sk2255-01mr 2SK2082 2SK194 2SK1941-01R

    A2388

    Abstract: ic801s ci A2388 ic 801
    Text: 2 S K 2 7 1 - 1 L , F U JI P O W E R M O S-FET S N-C HANNEL SILICON POWER MOS-FET F A P - I I A • features S E R I E S Outline Drawings • High speed switching • Low on-resistance • N d secondary breakdown • Low driving power • High voltage • V ; S= ± 3 0 V Guarantee


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan     		PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R

    TO-220F15

    Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
    Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S


    OCR Scan     		PDF 2SK2518-01MR O-220F15 2SK2250-01L 2SK22S1-01 O-220 2SK2292-01L 2SK2099-01 2SK2253-01MR T0220F15 2SK2252-01L TO-220F15 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01