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    2SK69 Price and Stock

    NEC Electronics Group 2SK699

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK699 1,188
    • 1 $4.95
    • 10 $4.95
    • 100 $4.95
    • 1000 $1.98
    • 10000 $1.815
    		Buy Now
    2SK699 341
    • 1 $4.95
    • 10 $4.95
    • 100 $3.0525
    • 1000 $2.7225
    • 10000 $2.7225
    		Buy Now

    2SK69 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK69 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK69 Unknown FET Data Book Scan PDF
    2SK690 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK690 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK690 Unknown FET Data Book Scan PDF
    2SK691 Unknown FET Data Book Scan PDF
    2SK692 Unknown FET Data Book Scan PDF
    2SK693 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK693 Toshiba Original PDF
    2SK693 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK693 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK693 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK693 Unknown FET Data Book Scan PDF
    2SK694 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK694 Toshiba Original PDF
    2SK694 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK694 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK694 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK694 Unknown FET Data Book Scan PDF
    2SK695 Hitachi Semiconductor Power Transistors Data Book Scan PDF

    2SK69 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK690 High Frequency FETs 2SK690 GaAs N-Channel MES Unit : mm For UHF medium-output power amplification 1.5±0.1 Downsizing of sets by mini power package and automatic insertion by magazine packing are available. 45˚ +0.1 1.0–0.2 0.4±0.08 +0.25 ● 0.1


    Original     		PDF 2SK690 tem10dBm

    2SK690

    Abstract: 2SK69
    Text: High Frequency FETs 2SK690 GaAs N-Channel MES FET For UHF medium output power amplification M Di ain sc te on na tin nc ue e/ d unit: mm • Features 0.4±0.08 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter * Symbol Unit 10 V VDS Gate to Source voltage


    Original     		PDF 2SK690 SC-62 2SK690 2SK69

    2SK847

    Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
    Text: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247


    Original     		PDF 2SK696 O-247 2SK719 2SK696A O-205AD/TO-39: 2N3374 2N3352 2SK847 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    diode sy 200

    Abstract: No abstract text available
    Text: »E|t,4E?SaS □□IflflTS 2 | E C ELECTRONICS INC 7 ^ 3 or N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR 2SK699 D E S C R IP T IO N The 2 SK 699 is N-Channel M OS Field Effect Power Tran ­ P A C K A G E D IM EN SIO N S sistor designed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK699 diode sy 200

    MPT100

    Abstract: No abstract text available
    Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &


    OCR Scan     		PDF

    Z623

    Abstract: IRF 5350 2SK698 IRF 544 IRF 544 km Z62-3 irf 846 45661 kivs tt 22
    Text: NEC m + T t v M O S Field E ffe c t P o w e r T ra n s is to r r x 2SK698 MOS F E T j i m 2S K 698Ü , N •f'-v ffiirC;0?iS; < , X 'i / > F ^ < x7 ~ I T i î ' , "/i~ > m Unit : mm) MOS F E T f ^ > X -f 'y -f- > 3.2 + 0.2 D C - D C n v ^ '- i 't t l f t o


    OCR Scan     		PDF 2SK698 2SK698Ã Z623 IRF 5350 2SK698 IRF 544 IRF 544 km Z62-3 irf 846 45661 kivs tt 22

    2SK699

    Abstract: No abstract text available
    Text: »E|t,4E?SaS E C ELECTRONICS INC GGlflflTa 2 | 7 ^ 3 ?.- o r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK699 D E S C R IP T IO N The 2 S K 6 9 9 is N-Channel M O S Field Effect Power Tran­ P A C K A G E D IM E N S IO N S sistor designed for solenoid, m otor and lamp driver.


    OCR Scan     		PDF 2SK699 2SK699

    K695

    Abstract: 2SK695
    Text: blE D 2SK695 • 4inbEQ5 0013133 3S3 « H i m HITACHI/ OPTOELECTRONICS SILICON N -CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching 1. Gate 2. Drain (Flange) 3. Source (Dimensions i • Low Drive Current


    OCR Scan     		PDF 2SK695 44Tb205 DG1313b K695 2SK695

    G100M

    Abstract: JSs diode
    Text: 2SK69S SILICON N -CH ANNEL MOS» F E T f c j f • tt • * f i -y + > r & > • x- i 'o rjS JB t^ ji^ o •m w iw titf'i'Z •2 DC—DC ^ 3: iftcJftiS. D im ensions in mm (TO-3P) P O W ER VS. T E M P E R A TU R E DERATING ■ A B S O LU TE MAXIMUM R/M IN G S ( T a = 25°C)


    OCR Scan     		PDF Tc-25 Ta-25Â Vos-20V* L-10n G100M JSs diode

    2SK694

    Abstract: No abstract text available
    Text: 2SK694 FIELD E F F E C T T R A N S IS T O R SILICO N N CH A N N EL M O S T Y P E TT-MOSll HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • L o w Dra i n - S o u r c e ON Resistance


    OCR Scan     		PDF 2SK694 100nA 300pA 2SK694

    2SK696

    Abstract: No abstract text available
    Text: 4 ^ 5 0 5 QD13137 TTT • H I T M HITACHI/Í0PT0ELECTR0NICS blE D 2SK696 ~ SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • 1- Gate 2. Drain F lange ) 3. Source ( Dimensions in mm 5 Low On-Resistance • High Speed Switching • Low Drive Current


    OCR Scan     		PDF Q013137 Ta-25Â PWS10 2SK696

    2SK693

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE w-MOSn 2SK693 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC; CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Sour ce ON Resistance : Rd s (q n )=0. 32f2 (Typ.)


    OCR Scan     		PDF 2SK693 100nA 2SK693

    Untitled

    Abstract: No abstract text available
    Text: blE D 2SK696 ~ 4 4 ^ 5 0 5 GD13137 TTT • H I T 4 HITACHI/ 0PT0ELECTR0NICS SILICON N -CH A N N EL MOS F E T HIGH SPEED POWER SWITCHING ■ FEATURES 1- G a te 2. D ra in (F la n g e ) • • • • Low On-Resistance High Speed Switching Low Drive Current


    OCR Scan     		PDF 2SK696 GD13137 001314G

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


    OCR Scan     		PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235