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    30N60A Price and Stock

    Vishay Siliconix SIHB30N60AEL-GE3

    MOSFET N-CH 600V 28A TO263
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    DigiKey SIHB30N60AEL-GE3 Cut Tape 8 1
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    SIHB30N60AEL-GE3 Digi-Reel 8 1
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    SIHB30N60AEL-GE3 Reel 1,000
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    Bristol Electronics SIHB30N60AEL-GE3 550
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    IXYS Corporation IXGH30N60A

    IGBT 600V 50A 200W TO247AD
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    Bristol Electronics IXGH30N60A 29
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    onsemi PCG30N60A4W

    DIODE SCHOTTKY
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    onsemi HGTG30N60A4

    IGBT 600V 75A TO247-3
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    Newark HGTG30N60A4 Bulk 90
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    IXYS Corporation IXSH30N60AU1

    IGBT 600V 50A 200W TO247
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    30N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30n60

    Abstract: igbt 30N60 30N60A IXYS 30N60 mos 30N60 30n60 equivalent ixsm equivalent for 30n60 30N60U1 030N60
    Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60 30N60A O-247 O-204AE 30n60 igbt 30N60 30N60A IXYS 30N60 mos 30N60 30n60 equivalent ixsm equivalent for 30n60 30N60U1 030N60

    30N60

    Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90


    Original     		PDF Wei60A 30N60 30N60A O-204AE 30N60 30N60A 30N60U1 N60A igbt 30N60 IXGH30N60U1 IXGH30N60AU1 IXGM30N60A

    30N60A4

    Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
    Text: 30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 TA49373 30N60A HGTP30N60A4D TA49345

    30n60a4d

    Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
    Text: 30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30n60a4d 30N60A4 TA49373 hgtp30n60a4 TA49343 LD26 TA49345 HGTG*N60A4D

    30N60A

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF N60U1 N60AU1 O-247 30N60U1 30N60AU1 30N60A

    30N60U1

    Abstract: 30n60
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF N60U1 N60AU1 30N60U1 30N60AU1 30N60U1 30n60

    30N60A4D

    Abstract: No abstract text available
    Text: 30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D

    30N60A4D

    Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
    Text: 30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D TA49373 30N60A4 TA49345 ICE 280 TA49343 30N60A

    IXGH30N60U1

    Abstract: IXGH30N60AU1 30N60U1 n60u1 30N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 30 N60U1 IXGH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF N60U1 N60AU1 30N60AU1 30N60U1 IXGH30N60U1 IXGH30N60AU1 30N60U1 n60u1 30N60AU1

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    30n60

    Abstract: 30N60A igbt 30N60 30 N60A N60A 30N60U1 IXGH30N60AU1 IXGH30N60A IXGH30N60U1
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90


    Original     		PDF 30N60 30N60A O-204AE 30N60 30N60A 30N60U1 30N60AU1 igbt 30N60 30 N60A N60A IXGH30N60AU1 IXGH30N60A IXGH30N60U1

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Low V CE sat „ , „ IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A v CES ^C25 V C E (sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 30N60 30N60A O-247

    30n60

    Abstract: N60A mos 30N60 igbt 30N60 30N60A GE1001 IXYS 30N60 30n60 igbt
    Text: H Y Y JL ^ sIk»!? flHVwÎ A- Low VC„, ,. IGBT E s a t High Speed IGBT ix s h /ix s m IXSH/IXSM 30N60 30N60A v CES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test C onditions Maximum Ratings V CES Td = 25°C to 150°C


    OCR Scan     		PDF 30N60 30N60A O-247 O-204 30N60U1 30N60AU1 N60A mos 30N60 igbt 30N60 GE1001 IXYS 30N60 30n60 igbt

    Untitled

    Abstract: No abstract text available
    Text: DIXYS IGBT with Diode L0W IXSH 30N60AU1 VCES I V c E s„. C25 v CE(sat) High Speed Combi Packs 600 V 50 A 3.0 V ?c S h o r t C ir c u it S O A C a p a b ilit y G OE Symbol Test Conditions VCES Tj =25°C to150°C 600 V VcOR Tj = 25° C to 150° C; RGE= 1 Mi2


    OCR Scan     		PDF 30N60AU1 to150 O-247AD

    KYS 30 40 diode

    Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
    Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan     		PDF O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

    G30N60A4

    Abstract: G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 HGTG30N60A4 TA49373 transistor bipolar collector current 1mA
    Text: i n t e 30N60A4 r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT File N u m b er i 4829 Features The 30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    OCR Scan     		PDF HGTG30N60A4 HGTG30N60A4 TA49343. O-247 G30N60A4 G30N60A4 G30N60A TIL-220 IGBT G30N60A4 TA49343 G30N60A4 transistor G30N60 TA49373 transistor bipolar collector current 1mA

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

    30n60

    Abstract: 1XSH30N60A
    Text: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V


    OCR Scan     		PDF 30N60 30N60A 30N60U1 30N60AU1 1XSH30N60A

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    30n60u

    Abstract: 30N60A ixgh30n60a IXGM30N60
    Text: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms


    OCR Scan     		PDF O-247 30N60U1 30N60AU1 4bflb22b 30n60u 30N60A ixgh30n60a IXGM30N60

    30N60A4D

    Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
    Text: i n t e 30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG30N60A4D HGTG30N60A4D TA49343. TA49373. 30N60A4D TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d TIL-220 HGTG*N60A4D la 4830 ic