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    400V INPUT POWER SUPPLY Search Results

    400V INPUT POWER SUPPLY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ IN input type Visit Toshiba Electronic Devices & Storage Corporation
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    TB67S589FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver / Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / CLK input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation

    400V INPUT POWER SUPPLY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF340

    Abstract: TA17424 to204ae TB334
    Text: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance


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    PDF IRF340 TB334 O-204AE TA17424. IRF340 TA17424 to204ae TB334

    ifr320

    Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
    Text: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF320, IRF321, IRF322, IRF323 ifr320 IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202

    ifr320

    Abstract: No abstract text available
    Text: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF320, IRF321 IRF322, IRF323 TA17404. ifr320

    dc-dc converter 380V

    Abstract: 400V voltage regulator "MITSUBISHI HYBRID" 12 pin transformer 120v M57120L-01 terminal 380v 100 a capacitor 47uF 25 volts 380v M57120L
    Text: MITSUBISHI HYBRID ICs M57120L HIGH VOLTAGE INPUT dc-dc CONVERTER MARKED SIDE A B D E H J F K L G M 1 C 12 TERMINAL NUMBER INPUT 11 5 OUTPUT Features: ٗ Wide Range of Input Source Voltage 113V-400V DC 12 PWM POWER 6 SUPPLY TP 7 Description: M57120L is a non-isolated


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    PDF M57120L 13V-400V M57120L 13V-400V) dc-dc converter 380V 400V voltage regulator "MITSUBISHI HYBRID" 12 pin transformer 120v M57120L-01 terminal 380v 100 a capacitor 47uF 25 volts 380v

    6SL3224-0BE13-7UA0

    Abstract: No abstract text available
    Text: 6SL3224-0BE13-7UA0 Page 1 Product data sheet 6SL3224-0BE13-7UA0 product name PM240 IP20 FSA U 400V 0,37kW Design A Back supply / [nicht versorgt - möglich] No rated output / kilowatt kW 0.37 kW rated output / in Horse Power (HP) 0.5 hp Input voltage / minimum


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    PDF 6SL3224-0BE13-7UA0 PM240 6SL3224-0BE13-7UA0

    6SL3224-0BE31-5UA0

    Abstract: 6SL3224 6SL32
    Text: 6SL3224-0BE31-5UA0 Page 1 Product data sheet 6SL3224-0BE31-5UA0 product name PM240 IP20 FSD U 400V 15kW Design D Back supply / [nicht versorgt - möglich] No rated output / kilowatt kW 15 kW rated output / in Horse Power (HP) 20 hp Input voltage / minimum


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    PDF 6SL3224-0BE31-5UA0 PM240 6SL3224-0BE31-5UA0 6SL3224 6SL32

    6SL3224-0BE32-2UA0

    Abstract: No abstract text available
    Text: 6SL3224-0BE32-2UA0 Page 1 Product data sheet 6SL3224-0BE32-2UA0 product name PM240 IP20 FSD U 400V 22kW Design D Back supply / [nicht versorgt - möglich] No rated output / kilowatt kW 22 kW rated output / in Horse Power (HP) 30 hp Input voltage / minimum


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    PDF 6SL3224-0BE32-2UA0 PM240 6SL3224-0BE32-2UA0

    6SL3224-0BE25-5UA0

    Abstract: 6SL32 6SL3224
    Text: 6SL3224-0BE25-5UA0 Page 1 Product data sheet 6SL3224-0BE25-5UA0 product name PM240 IP20 FSC U 400V 5,5kW Design C Back supply / [nicht versorgt - möglich] No rated output / kilowatt kW 5.5 kW rated output / in Horse Power (HP) 7.5 hp Input voltage / minimum


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    PDF 6SL3224-0BE25-5UA0 PM240 6SL3224-0BE25-5UA0 6SL32 6SL3224

    6SL3224-0BE27-5UA0

    Abstract: No abstract text available
    Text: 6SL3224-0BE27-5UA0 Page 1 Product data sheet 6SL3224-0BE27-5UA0 product name PM240 IP20 FSC U 400V 7,5kW Design C Back supply / [nicht versorgt - möglich] No rated output / kilowatt kW 7.5 kW rated output / in Horse Power (HP) 10 hp Input voltage / minimum


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    PDF 6SL3224-0BE27-5UA0 PM240 6SL3224-0BE27-5UA0

    6SL3224-0BE31-8UA0

    Abstract: 6SL32 6SL3224
    Text: 6SL3224-0BE31-8UA0 Page 1 Product data sheet 6SL3224-0BE31-8UA0 product name PM240 IP20 FSD U 400V 18,5kW Design D Back supply / [nicht versorgt - möglich] No rated output / kilowatt kW 18.5 kW rated output / in Horse Power (HP) 25 hp Input voltage / minimum


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    PDF 6SL3224-0BE31-8UA0 PM240 6SL3224-0BE31-8UA0 6SL32 6SL3224

    6SL3224-0BE23-0UA0

    Abstract: 380V 6SL3224
    Text: 6SL3224-0BE23-0UA0 Page 1 Product data sheet 6SL3224-0BE23-0UA0 product name PM240 IP20 FSB U 400V 3,0kW Design B Back supply / [nicht versorgt - möglich] No rated output / kilowatt kW 3 kW rated output / in Horse Power (HP) 4 hp Input voltage / minimum


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    PDF 6SL3224-0BE23-0UA0 PM240 6SL3224-0BE23-0UA0 380V 6SL3224

    Untitled

    Abstract: No abstract text available
    Text: IRFP350, IRFP351, IRFP352, IRFP353 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRFP350, IRFP351, IRFP352, IRFP353

    IFR320

    Abstract: No abstract text available
    Text: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF320, IRF321, IRF322, IRF323 RF322, IFR320

    Untitled

    Abstract: No abstract text available
    Text: IRF720, IRF721, IRF722, IRF723 h a r r is SEMIC0NDUCT0R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF720, IRF721, IRF722, IRF723 RF722, RF723

    gate drive circuit for power MOSFET IRF740

    Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
    Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF740, IRF741, IRF742, IRF743 TA17424. gate drive circuit for power MOSFET IRF740 irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir

    Untitled

    Abstract: No abstract text available
    Text: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF330, IRF331y IRF332, IRF333 beRF333

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322,

    Untitled

    Abstract: No abstract text available
    Text: h a IRFF320, IRFF321, IRFF322, IRFF323 r r i s ” “ ICONDUCTOE 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.0A and 2.5A, 350V to 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFF320, IRFF321, IRFF322, IRFF323 TA17404323 RFF321, RFF322,

    TRANSISTORS 132 GD

    Abstract: No abstract text available
    Text: tyvvys S IRFD310, IRFD311, IRFD312, IRFD313 S e m ico n d ucto r y 7 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.3A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFD310, IRFD311, IRFD312, IRFD313 TRANSISTORS 132 GD

    IRF710

    Abstract: irf713
    Text: W vys S IRF710, IRF711, IRF712, IRF713 S e m ico n d ucto r y 7 1.7A and 2.0A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1,7A and 2.0A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF710, IRF711, IRF712, IRF713 IRF710 irf713

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFD320, IRFD321, IRFD322, IRFD323 S e m ico n d ucto r y y 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 0.5A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFD320, IRFD321, IRFD322, IRFD323

    IFR320

    Abstract: IRF322 IRF320
    Text: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate


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    PDF IRF320, IRF321 IRF322, IRF323 TA17404. IRF321, RF322, IFR320 IRF322 IRF320

    F741

    Abstract: rf74 power MOSFET IRF740 irf740 mosfet IRF741 IRF740 ir TA17424 gate driver circuit IRF741 Transistor IRF743 IRF740
    Text: IRF740, IRF741, IRF742, IRF743 HARRIS a S E M I C O N D U C T O R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF740, IRF741, IRF742, IRF743 TB334 F741 rf74 power MOSFET IRF740 irf740 mosfet IRF741 IRF740 ir TA17424 gate driver circuit IRF741 Transistor IRF743 IRF740

    Untitled

    Abstract: No abstract text available
    Text: H A R R IRFF320, IRFF321, IRFF322, IRFF323 S s e m i c o n d u c t o r 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.0A and 2.5A, 350V and 400V • High Input Impedance These are N-Channel enhancem ent mode silicon gate


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    PDF IRFF320, IRFF321, IRFF322, IRFF323