P11NM60
Abstract: p11nm60fdfp b11nm60
Text: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A
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STB11NM60FD
STB11NM60FD-1
STP11NM60FD
STP11NM60FDFP
O-220/TO-220FP/D2PAK/I2PAK
O-220
P11NM60
p11nm60fdfp
b11nm60
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Untitled
Abstract: No abstract text available
Text: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A
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STB11NM60FD
STB11NM60FD-1
STP11NM60FD
STP11NM60FDFP
O-220/TO-220FP/D2PAK/I2PAK
STB11NM60FD
O-220
STP11NM60FD
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JESD97
Abstract: STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP
Text: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A
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STB11NM60FD
STB11NM60FD-1
STP11NM60FD
STP11NM60FDFP
O-220/TO-220FP/D2PAK/I2PAK
STB11NM60FD
O-220
STP11NM60FD
JESD97
STB11NM60FD-1
STP11NM60FDFP
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Untitled
Abstract: No abstract text available
Text: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated
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STB8NM60D
STP8NM60D
O-220/D2PAK
O-220
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B8NM60D
Abstract: JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters
Text: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated
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STB8NM60D
STP8NM60D
O-220/D2PAK
O-220
B8NM60D
JESD97
STB8NM60D
STP8NM60D
ZVS phase-shift converters
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100n60
Abstract: No abstract text available
Text: Preliminary Technical Information IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings
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IXXK100N60B3H1
IXXX100N60B3H1
10-30kHz
150ns
O-264
IF110
100N60B3
0-10-A
100n60
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500a diode
Abstract: k1 522 APTDF450U60
Text: APTDF450U60 Single diode Power Module VCES = 600V IC = 450A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles
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APTDF450U60
500a diode
k1 522
APTDF450U60
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Untitled
Abstract: No abstract text available
Text: APTDF450U60G Single diode Power Module VCES = 600V IC = 450A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles
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APTDF450U60G
50/60Hz
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APT0502
Abstract: APTDF450U60G
Text: APTDF450U60G Single diode Power Module VCES = 600V IC = 450A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles
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APTDF450U60G
APT0502
APTDF450U60G
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES
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IXGK72N60B3H1
IXGX72N60B3H1
IC110
O-264
PLUS247
72N60B3
06-26-08-C
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75N60
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IXXH75N60B3D1
IC110
125ns
O-247
IF110
062in.
75N60B3
75N60
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IXGK72N60B3H1
Abstract: PLUS247 ixgx72n60b3h1 IXGX72N60B3H
Text: Preliminary Technical Information IXGK72N60B3H1 IXGX72N60B3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES
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IXGK72N60B3H1
IXGX72N60B3H1
IC110
O-264
PLUS247
72N60B3
06-26-08-C
IXGK72N60B3H1
PLUS247
ixgx72n60b3h1
IXGX72N60B3H
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IGBT DRIVE 600V 300A
Abstract: what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A
Text: QIQ0630003 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy
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QIQ0630003
-1200A/
IGBT DRIVE 600V 300A
what is fast IGBT transistor
igbt 600V 300A
QIQ0630003
fast recovery diode 600v 1200A
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IXGH36N60B3C1
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH36N60B3C1 = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES
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IC110
IXGH36N60B3C1
100ns
40kHz
O-247
36N60B3C1
IXGH36N60B3C1
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IXGH36N60B3C1
Abstract: IF110 g36n60b3c1 Schottky Diode 400V 15A
Text: Preliminary Technical Information IXGH36N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES
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IXGH36N60B3C1
IC110
100ns
40kHz
O-247
36N60B3C1
IXGH36N60B3C1
IF110
g36n60b3c1
Schottky Diode 400V 15A
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G30N60
Abstract: IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3
Text: Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions
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IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
IC110
100kHz
O-263
O-220
IF110
G30N60
IXGH30N60C3C1
20A 300V Schottky Diode
IF110
IXGP30N60C3C1
IGBT 600V 40A diode
30N60C
40ATD
IXGA30N60C3C1
IXGP30N60C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGK72N60A3H1 IXGX72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching = = £ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES
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IXGK72N60A3H1
IXGX72N60A3H1
IC110
250ns
O-264
PLUS247
IF110
72N60A3
4-23-09-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IC110
IXXH75N60B3D1
125ns
O-247
IF110
75N60B3
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75 LS 541
Abstract: pearson ct 411 pearson 411
Text: K1 K2 DU500FD60 A1 600V 500A A2 ULTRAFAST SOFT RECOVERY DIODE MODULE PRODUCT DESCRIPTION PRODUCT FEATURES PRODUCT APPLICATIONS These 500A ultrafast diode Application Specific Power Modules are designed for high frequency switching where trr and the softness of the
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DU500FD60
F-33700
75 LS 541
pearson ct 411
pearson 411
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QIQ0645002
Abstract: No abstract text available
Text: QIQ0645002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode Description: Powerex Low Side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy mounting with
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QIQ0645002
-1800A/
QIQ0645002
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IXXX100N60B3H1
Abstract: ixxk100n60b3h1
Text: IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXK100N60B3H1
IXXX100N60B3H1
IC100
150ns
O-264
IF110
062in.
O-264)
IXXX100N60B3H1
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IXGA30N60C3C1
Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
IC110
100kHz
O-263
IF110
O-220AB
O-247
IXGH30N60C3C1
30N60C3
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IC110
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
O-263
100kHz
O-220AB
IF110
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Untitled
Abstract: No abstract text available
Text: XPTTM 600V GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) IXXK100N60B3H1 IXXX100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC100
IXXK100N60B3H1
IXXX100N60B3H1
10-30kHz
150ns
O-264
IF110
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