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    IXGP30N60C3 Price and Stock

    IXYS Corporation IXGP30N60C3

    IGBT 600V 60A 220W TO220AB
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    DigiKey IXGP30N60C3 Tube 50
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    Bristol Electronics IXGP30N60C3 200
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    IXYS Corporation IXGP30N60C3D4

    IGBT 600V 60A 220W TO220AB
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    DigiKey IXGP30N60C3D4 Tube 50
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    IXYS Integrated Circuits Division IXGP30N60C3

    IGBT DIS.SINGLE 30A 600V GENX3 TO220AB
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    Ozdisan Elektronik IXGP30N60C3
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    IXYS Integrated Circuits Division IXGP30N60C3C1

    IGBT DIS.DIODE SiC SINGLE 30A 600V GENX3 TO220AB
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    Ozdisan Elektronik IXGP30N60C3C1
    • 1 $14.6972
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    IXYS Integrated Circuits Division IXGP30N60C3D4

    IGBT DIS.DIODE SINGLE 30A 600V GENX3 TO220AB
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    Ozdisan Elektronik IXGP30N60C3D4
    • 1 $2.90752
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    • 100 $2.6432
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    IXGP30N60C3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGP30N60C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 220W TO220AB Original PDF
    IXGP30N60C3C1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 220W TO220 Original PDF
    IXGP30N60C3D4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 220W TO220AB Original PDF

    IXGP30N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3D4 IXGP30N60C3D4 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGA30N60C3D4 IXGP30N60C3D4 40-100kHz O-263 O-220AB 8-06B

    G30N60

    Abstract: IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710
    Text: GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 40-100kHz IC110 O-263 O-220 G30N60 IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710

    IXGA30N60C3

    Abstract: IXGH30N60C3 IXGP30N60C3 30N60C3 G30N60C3
    Text: IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF 40-100kHz IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 IC110 O-263 IC110 O-220AB O-247 30N60C3 IXGH30N60C3 G30N60C3

    IXGP30N60C3D4

    Abstract: IXGA30N60C3D4 g30N60
    Text: IXGA30N60C3D4 IXGP30N60C3D4 GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF 40-100kHz IXGA30N60C3D4 IXGP30N60C3D4 IC110 O-263 IC110 O-220AB 8-06B IXGP30N60C3D4 g30N60

    IXGA30N60C3C1

    Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
    Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 IC110 100kHz O-263 IF110 O-220AB O-247 IXGH30N60C3C1 30N60C3

    g30n60

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXGA30N60C3 IXGP30N60C3 40-100kHz IC110 O-263 O-220 30N60C3 g30n60

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings


    Original     		PDF IC110 IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 O-263 100kHz O-220AB IF110

    30N60C3

    Abstract: g30n60c3 G30N60 igbt g30n60c3 IXGA30N60C3D4 IXGP30N60C3D4
    Text: Preliminary Technical Information GenX3TM 600V IGBT With Diode IXGA30N60C3D4 IXGP30N60C3D4 VCES = IC110 = VCE sat ≤ tfi(typ) = High Speed PT IGBTs for 40-100kHz switching 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXGA30N60C3D4 IXGP30N60C3D4 IC110 40-100kHz O-263 O-220 8-06B 30N60C3 g30n60c3 G30N60 igbt g30n60c3 IXGA30N60C3D4 IXGP30N60C3D4

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 40-100kHz O-263 O-220AB 30N60C3 5-02-11-A

    G30N60

    Abstract: IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3
    Text: Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions


    Original     		PDF IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 IC110 100kHz O-263 O-220 IF110 G30N60 IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    600v 30a IGBT

    Abstract: igbt 600V 30A datasheet 600v 600v 30a IXGR60N60C3C1 igbt 600V IXGH30N60C3C1 30A, 600v DIODE igbt to247 silicon carbide
    Text: The Best just got Better IXYS 600V GenX3SC - Achieving New Levels of Efficiency TM Part Number Vces Ic100 tc=25oC Vce sat tj=25oC tfi (typ) tj=25oC Eoff typ tj=125oC Rthjc max Package Type IXGR60N60C3C1 600V 30A 2.5V 50ns 0.80mJ 0.73oC/W ISOPLUS247TM IXGA30N60C3C1


    Original     		PDF Ic100 125oC IXGR60N60C3C1 73oC/W ISOPLUS247TM IXGA30N60C3C1 56oC/W O-263 IXGP30N60C3C1 600v 30a IGBT igbt 600V 30A datasheet 600v 600v 30a IXGR60N60C3C1 igbt 600V IXGH30N60C3C1 30A, 600v DIODE igbt to247 silicon carbide

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PDF PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter

    solar inverter circuit

    Abstract: 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A SOLAR INVERTER
    Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F IXYS expands its 600V genx3TM IGBT family with silicon carbide anti-parallel diode july 2009 OVERVIEW The recent emergence and commercialization of Silicon Carbide SiC Technology in the power semiconductor industry has brought to light significant performance advances in


    Original     		PDF E153432) com/IXAN0022 pb60IGBTSC solar inverter circuit 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A SOLAR INVERTER