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Harris Semiconductor IRF645 13A, 250V, 0.34 OHM, N-Channel POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRF645		265		1	1 $0.9642 10 $0.9642 100 $0.9063 1000 $0.8196 10000 $0.8196	Buy Now

IRF645 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF645	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF645	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF645	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRF645	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF645	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF645	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF645	Unknown	FET Data Book	Scan	PDF
IRF645	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRF645 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRF645 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)13# I(DM) Max. (A) Pulsed I(D)8.0 @Temp (øC)100 IDM Max (@25øC Amb)52# @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55õ	Original	IRF645	PDF
rf1s644s Abstract: RF1S644 irf644 RF1S644SM TA17423 Text: IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM S E M I C O N D U C T O R 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate	Original	IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM TA17423. rf1s644s RF1S644 irf644 RF1S644SM TA17423	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
rf1s644s Abstract: No abstract text available Text: HARRIS S E M I C O N D U C T O R IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM TA17423E RF644, IRF645 rf1s644s	PDF
Untitled Abstract: No abstract text available Text: P *3 3 S IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Description Features 13A and 14A, 250V and 275V High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM opera1S644,	PDF
1rf644 Abstract: 1RF645 Text: [ 2 H A R R IS IRF644, IRF645 IRF646, IRF647 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features TO -22 0 A B TOP VIEW • 13A and 14A, 250V - 275V • rosCon = 0 .2 8 0 and 0 .3 4 fl • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited	OCR Scan	IRF644, IRF645 IRF646, IRF647 IRF645, IRF647 JRF644, Figure16 1rf644 1RF645	PDF
IRF645 Abstract: IRF646 IRF644 100AH IRF647 Rf644 IFIF644 IFIF646 Text: _ Rugged Power MOSFETs File Num ber 2169 IRF644, IRF645, IRF646, IRF647 Avalanche Energy Rated N-Channel Power MOSFETs N-CHANNEL ENHANCEMENT MODE 14A, and 13A, 275V, 250V rDS on = 0.280, 0 .3 4 0 Features: • Single pulse avalanche energy rated	OCR Scan	IRF644, IRF645, IRF646, IRF647 IRF647 IRF645 IRF646 IRF644 100AH Rf644 IFIF644 IFIF646	PDF
irf644 Abstract: Irfp244 Text: IRF644/645 IRFP244/245 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 irf644 Irfp244	PDF
IRF644 Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure	OCR Scan	G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644	PDF
1rf740 Abstract: 1RF840 1rf820 1RF634 1RF630 1rf730 IRF810 1RF645 IRF112 IRF645 Text: - 254 - f M £ tt ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s th) ft Ta=25‘ C) Ds(on) Vi>s= I d (on) g fs Ciss Coss Crss (typ) ( typ) (typ) /CH min Vg s m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1- B m % Vg s = 0	OCR Scan	1RF642 O-220AB IRF643 IRF644 IRF722 IRF723 IRF730 O-220 IRF731 1rf740 1RF840 1rf820 1RF634 1RF630 1rf730 IRF810 1RF645 IRF112 IRF645	PDF
1RF630 Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613 Text: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 typ (A) Id (A) Vg s (V) typ (S) (*typ) (max) (pF) Id (A)	OCR Scan	Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF630 irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613	PDF
IRFZ30 Abstract: IRFZ45 IRFZ32 irfz IRFZ12 THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE Text: THOriSÜN/ DISTRIBUTOR SflE D • ÌOat.073 OOOSaDl HEXFET Powermosfets L^ l m TCSK intemaraonal Rectifier Plastic Insertable Package T0-220 N-Channel Part Number V p s Drain Source Voltage Volts R0S(on) On-State Resistance (Ohms) Iq Continuous Drain Current	OCR Scan	T0-220 IRFZ12 O-220AB IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 IRFZ30 IRFZ45 IRFZ32 irfz THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE	PDF
1rf730 Abstract: 1rf740 1RF840 1RF630 IRF810 1RF711 IRFI13 IRF643 IRF644 IRF711 Text: - 254 - f M tt £ ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) ft % Vi>s= Ta=25‘ C) I d (on) D s (o n ) g fs Ciss Coss Crss (typ) ( typ) (typ) (max) (max) (max) (pF) (pF) (pF) Vg s = 0 Vg s /CH Vd g * /CH min Vg s	OCR Scan	1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf730 1rf740 1RF840 1RF630 IRF810 1RF711 IRFI13 IRF711	PDF

4311 mosfet transistor Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760	OCR Scan	2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r	PDF
1RF640 Abstract: 1rf630 IRF810 1RF633 1RF634 1RF522 1rf740 Rf644 IRF530 IRF533 Text: - £> tt £ * f m V Vd s or € * Vdg Hr V £ Vg s tS eg. (Ta=250) Id Pd loss I gss Vg s th) 14 ft lo(on) F Ds(on) Vd s = g fs Ciss Coss /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) typ Id (typ) (max) (*typ) (max) (max) (S) (A) (pF)	OCR Scan	1RF522 O-220AB RF523 IRF530 IRF722 IRF723 IRF730 O-220 IRF731 1RF640 1rf630 IRF810 1RF633 1RF634 1rf740 Rf644 IRF533	PDF
1rf740 Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13 Text: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (typ) ( typ) (typ) /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-	OCR Scan	1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf740 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13	PDF
IRF644 Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF644/645 FEATURES • Lower Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRF644/645 O-220 IRF644 IRF645	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
IRF9120 Abstract: 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143 Text: - 25 4 - f M tt £ ft Vd s or € X £ Vg s V Id Pd * /CH Vd g % fé <Ta=25cC ) (V) (A) ÏI Ig s s Vg s th) Id s s * /CH min (nA) m Vg s (V) ( HA ) Vd s (V) (V) Vi>s= Vg s max (V) % 1D (nA) ft (Ta=25‘ C) Id (on) Ds(on) g fs Ciss Coss Crss Vg s =0 (max)	OCR Scan	1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB IRF9120 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143	PDF
1RF640 Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530 Text: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)	OCR Scan	1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF640 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620	PDF
1rf740 Abstract: 1RF642 1rf730 1RF640 1RFD110 1RF840 IRF643 IRF644 IRF711 IRF712 Text: - 254 - f M £ tt € ft X £ Vd s or Vd g Vg s fé <Ta=25cC Id Pd * /CH * /CH ÏI Ig s s V g s th) Id s s min 1D nA) (Ta=25‘C ) Id (on) D s(o n ) Vi>s= Vg s max ft g fs Ciss Coss Crss $1- B m % V g s =0 (max) typ V g s (V) (0) lyp (A) (nA) IRF642 IR	OCR Scan	1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf740 1rf730 1RF640 1RFD110 1RF840 IRF711 IRF712	PDF
pj 67 diode Abstract: pj 69 diode irf644 IRF64 pj 59 diode IRF645 IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A Text: HE 0 \| MÖSS4S2 □□□ÖS12 a I Data Sheet No. PD-9.527A INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER IO R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED IR F 6 44 IR F 6 4 5 HEXFET TRANSISTORS ;n N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-220AB Plastic Package	OCR Scan	T-39-15 O-220AB C-267 IRF644, IRF645 0Q0A511 C-268 pj 67 diode pj 69 diode irf644 IRF64 pj 59 diode IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A	PDF
IRFP237 Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244 Text: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13	OCR Scan	T05tifl73 QDDS71D IRF232R IRF230R IRF242R IRF240R IRF252R IRF250R IRFF212R IRFF210R IRFP237 IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244	PDF

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IRF645 Price and Stock

Harris Semiconductor IRF645

IRF645 Datasheets (8)

IRF645 Datasheets Context Search

Untitled

rf1s644s

SSP35n03

YTA630

rf1s644s

Untitled

1rf644

IRF645

irf644

IRF644

1rf740

1RF630

IRFZ30

1rf730

4311 mosfet transistor

1RF640

1rf740

IRF644

IRF9210

IRF9120

1RF640

1rf740

pj 67 diode

IRFP237