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    LH534000BD Search Results

    LH534000BD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH534000BD-S Sharp CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Programmable ROM Scan PDF

    LH534000BD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    48-PIN

    Abstract: LH534
    Text: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words × 16 bit organization (Word mode) • Access times: 500 ns (2.6 V ≤ VCC < 4.5 V) 200 ns (4.5 V ≤ VCC ≤ 5.5 V) • Wide range power supply: 2.6 to 5.5 V • Static operation


    Original
    LH534000B-S 8/256K 40-PIN 40-pin, 600-mil 525-mil 48-pin, LH534000B-S 48-PIN LH534 PDF

    lh5s4

    Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
    Text: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.


    OCR Scan
    LH53H4100 LH53H4100D/N LH5H41XX) LH53H4100D LH53H4100N 32-pin DIP032-P-0600) OP032-P-0525) A0-A18 lh5s4 lh5348 LH5s lh5s47xx 48-TSOP LH53H4100N lh534y00d 48TSOP sharp mask rom PDF

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan
    LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600 PDF

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


    OCR Scan
    28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235 PDF

    lh5348

    Abstract: lh5s4 48TSO
    Text: ü fi LH53V4R00 LH53V4R00-2 • Description ■ Pin Connect for T h e L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U ser's N o . : L H 5V 4R X X is a CM OS 4 M -b it m ask-program m able ROM 32-pin SOP organized as 524 288 X 8 bits. It provides a high-speed access time o f 120/150 ns with low


    OCR Scan
    LH53V4R00 LH53V4R00-2 32-pin LHS3V4R00-2 lh5348 lh5s4 48TSO PDF

    Untitled

    Abstract: No abstract text available
    Text: LH534000B-S CMOS 4M 512K x 8/256K x 16 3V-Drive MROM PIN CONNECTIONS FEATURES • 524,288 words x 8 bit organization x 16 bit organization 40-PIN DIP 40-PIN SOP (Byte mode) 262,144 words TOP VIEW r A17 C (Word mode) • Access times: 500 ns (2.6 V < Vcc < 4.5 V)


    OCR Scan
    LH534000B-S 40-pin, 600-mil 525-mil 48-pin, 8/256K 40-PIN PDF

    lh5348

    Abstract: TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx
    Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Description Pin Connection T he L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U s e r's N o. : LH5V4RXX is a CM O S 4M -bit m ask-program m able ROM


    OCR Scan
    LH53V4R00 LH53V4R00-2 LH53V4R00N/T, LH53V4R00N/T-2 LH53V4R00 LH53V4R00N1LH53V4R00N-2 32-pin lh5348 TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx PDF

    lh5s4

    Abstract: lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH53V4R00N LH5H41XX TSOP032-P-0820
    Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Description Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Pin Connection The L H 53V 4R 00N /T , L H 53V 4 R 0 0 N /T -2 U ser’s N o. : LH5V4RXX is a CMOS 4M -bit mask-programmable ROM 32-pin SOP


    OCR Scan
    LH53V4R00 LH53V4R00-2 LH53V4R00N/T, LH53V4R00N/T-2 32-pin LH53V4R00N lh5s4 lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH5H41XX TSOP032-P-0820 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan
    41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    sharp mask rom 44-pin

    Abstract: sharp mask rom AE-C17
    Text: LH534000B FEATURES • Memory organization selection: 524,288 x 8 bit byte mode 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |aW (MAX.)


    OCR Scan
    LH534000B 8/256K 40-pin, 600-mil 525-mil 48-pin, 44-pin, LH534000B sharp mask rom 44-pin sharp mask rom AE-C17 PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan
    41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan
    416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 PDF

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan
    TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 PDF

    48-PIN

    Abstract: No abstract text available
    Text: LH534000B-S FEATURES CMOS 4M 512K x 8/256K x 16 3V-Drive M ask-Program m able ROM PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW 1« \ 40 □ Ay C 2 39 I] Ag


    OCR Scan
    LH534000B-S 8/256K 40-pin, 600-mil 525-miI 48-pin, 12x18 LH534000B-S 40-PIN 48-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW / 1* 40 □ 2 39 □ Ag A6 □ 3 38 □ A 10 5 c


    OCR Scan
    LH534000B-S 8/256K 40-PIN 40-pin, 600-mil 525-mil 48-pin, LH534000B-S PDF

    sharp mask rom

    Abstract: cd rom 40 pinout lh5348 lh5s4 LH5S
    Text: NEW PRODUCT INFORMATION SHARP LH53H4000 • Description The LH53H4000D/N User's No. : LH5H40XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be selected by BYTE input pin. ■ Features


    OCR Scan
    LH53H4000 LH53H4000D/N LH5H40XX) LH53H4000D 40-pin DIP040-P-0600) LH53H4000N OP040-P-0525) 40DIP/40SOP/48TSOP sharp mask rom cd rom 40 pinout lh5348 lh5s4 LH5S PDF

    lh5348

    Abstract: lh5s4 lh5348xx sharp mask rom LH534A00T LH5s LH534B00T 40-DIP
    Text: NEW PRODUCT INFORMATION SHARP LH53H4100 • High-speed 4M-bit Mask-Programmable ROM ■ Description Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.


    OCR Scan
    LH53H4100 LH53H4100D/N LH5H41XX) LH53H4100D 32-pin DIP032-P-0600) LH53H4100N OP032-P-0525) 4P00N/T lh5348 lh5s4 lh5348xx sharp mask rom LH534A00T LH5s LH534B00T 40-DIP PDF

    lh5348

    Abstract: lh5348xx sharp mask rom lh5s4
    Text: NEW PRODUCT INFORMATION SHARP LH53 H 4100 • High-speed 4M-bit Mask-Programmable ROM ■ Description Pin Connections The LH53H4100D/N User’s No. : LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.


    OCR Scan
    LH53H4100D/N LH5H41XX) LH53H4100D 32-pin DIP032-P-0600) LH53H4100N OP032-P-0525) A40TSOP 40DIP/44QFJ lh5348 lh5348xx sharp mask rom lh5s4 PDF

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 4 0 0 0 B - S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) c" ° s 4" (,12K^ E PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW Zi Ag 1« 40 C 2 39 D Ag Ü 3 38 H A 10 As C 4 37 Zl A ^ A17 C


    OCR Scan
    40-pin, 600-mil 525-mil 48-pin, 40-PIN LH534000B-S PDF

    lh5s4

    Abstract: lh5348 40-DIP LH53H4000D LH53H4000N 48TSOP 40-pin EPROM pinout sharp mask rom LH534B00T
    Text: NEW PRODUCT INFORMATION S H A R P LH53H4000 • Description ■ The LH53H4000D/N User's No. : LH5H40XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be selected by BYTE input pin.


    OCR Scan
    LH53H4000 LH53H4000D/N LH5H40XX) LH53H4000D 40-pin DIP040-P-0600) LH53H4000N SQP040-P-0525) 512kX lh5s4 lh5348 40-DIP 48TSOP 40-pin EPROM pinout sharp mask rom LH534B00T PDF

    Untitled

    Abstract: No abstract text available
    Text: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Programmable ROM PIN CONNECTIONS 40-P IN D IP 40-PIN S O P T O P V IEW f a 17 C 1» N 40 I ] Ag


    OCR Scan
    LH534000B-S 40-pin, 600-mil 525-mil 48-pin, 8/256K 40-PIN 12x18 PDF

    sharp mask rom 44-pin

    Abstract: sharp mask rom
    Text: CMOS 4M 512K x 8 / 256K x 16 Mask Programmable ROM FEATURES • PIN CONNECTIONS Memory organization selection: 524,288 x 8 bit (byte mode) 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low power consumption:


    OCR Scan
    40-pin, 600-mil 40-pln, 525-mil 44-pin, LH534000B LH534000B LH53-tOOOB sharp mask rom 44-pin sharp mask rom PDF