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    BD934 TRANSISTOR Search Results

    BD934 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD934 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 941

    Abstract: BD933 transistor A 935 417 TRANSISTOR BD937 BD934 transistor IC 935 c 939 BD935 BD939
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION •DC Current Gain: hFE= 40 Min @ IC= 150mA ·Complement to Type BD934/936/938/940/942 APPLICATIONS ·Designed for use in output stages of audio and television


    Original     		PDF BD933/935/937/939/941 150mA BD934/936/938/940/942 BD933 BD937 BD939 BD941 BD935 ic 941 BD933 transistor A 935 417 TRANSISTOR BD937 BD934 transistor IC 935 c 939 BD935 BD939

    2sc630

    Abstract: KT817B IDB434 2SD130 2SB1003 2N3167 MOTOROLA 2sd1369 bd57 2SC790R 2N319
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T (V) (W) Min (Hz) r •CBO Max Max (A) (8) (CE)ut Max (Ohms) Top«r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original     		PDF KT817A 2SD91 IDB1023 IDD1413 2SB1003 2SD1369 BDY34 2N3632 See00n 2sc630 KT817B IDB434 2SD130 2N3167 MOTOROLA bd57 2SC790R 2N319

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original     		PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


    Original     		PDF BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


    Original     		PDF MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


    Original     		PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


    Original     		PDF 2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100

    2N5037

    Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi


    Original     		PDF BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251

    Untitled

    Abstract: No abstract text available
    Text: BD934; 936 BD938; 940 BD942 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD934; BD938; BD942 BD933; BD934 003452b DQ34S27

    BD938

    Abstract: BD934 BD942 B0938 TI 936 BD934 transistor BD933 003452b
    Text: BD934; 936 BD938; 940 BD942 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. N-P-N complements are BD933; 935; 937; 939 and 941.


    OCR Scan     		PDF BD934; BD938; BD942 BD933; BD934 bb53T31 7Z82165 BD938 BD934 BD942 B0938 TI 936 BD934 transistor BD933 003452b

    D934

    Abstract: Z8.2 bd938
    Text: BD934; 936 BD938; 940 BD942 PH IL IP S INTERNATIONAL SbE D • 7110fl2b 0G43GSfl TDD « P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television am plifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD934; BD938; BD942 7110fl2b 0G43GSfl BD933; T-33-19 D934 Z8.2 bd938

    BD941

    Abstract: b 939 a BD933 BD934 BD937 IEC134 IC 935
    Text: BD933; 935 BD937; 939 BD941 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BD934; 936; 938; 940 and 942.


    OCR Scan     		PDF BD933; BD937; BD941 BD934; BD933 MECHANIC0034515 7Z82166 BD941 b 939 a BD934 BD937 IEC134 IC 935

    B0938

    Abstract: BD938 942CO z82178 B0934 BD933 BD934 BD942 BD934 philips
    Text: BD934; 936 BD938; 940 BD942 PHILIPS INTERNATIONAL SbE D m 711002b DCm3[]5a TDD • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T -3 3 -n P-N-P silicon transistors in a plastic envelope intended fo r use in output stages of audio and television am plifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD934; BD938; BD942 711002b 043DSfl T-33-n BD933; BD934 B0938 BD938 942CO z82178 B0934 BD933 BD942 BD934 philips

    Untitled

    Abstract: No abstract text available
    Text: _ J BD933; 935 BD937; 939 BD941 V SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD933; BD937; BD941 BD934; BD933 oo34s 003HS1S

    BD934

    Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
    Text: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD933; BD937 BD941 7110fl2b 0043D44 BD934; BD933 T-33-09 BD937; BD934 B0937 B0941 B0939 BD941 BD934 philips IEC134 c 939

    B0937

    Abstract: b 939 a ic B0937 T3309 B0941 BD933 transistor A 935 BD934 BD937 BD941
    Text: BD933; 935 BD937; 939 BD941 PHILIPS INTERNATIONAL SbE D • 711DfiEb 0043D44 MIL ■ P H I N SILICO N EPITAXIAL B A S E PO W ER T R A N S IS T O R S 7 - 3 3 - 0 * 1 N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television


    OCR Scan     		PDF 711DfiEb BD933; BD937; BD941 BD934; BD933 T-33-09 B0937 b 939 a ic B0937 T3309 B0941 transistor A 935 BD934 BD937 BD941

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11