c5129
Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
Text: 5 4 3 2 A6M 1 REVISION: 2.0 128-BIT AMD S1g1 D Unbuffer DDR2 SO-DIMM Channel A/B x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 CRT C51MV C TV OUT X8 /X4 HyperTransport 200/400/800 MHz BGA 468 PCMCIA 33MHz
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Original
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USB/AC97/SMB
1394/SD
ALC880
RJ45/11/MDC
PIC16F54C
MAX8725
TPC8107
Page19,
Page38,
R3811
c5129
C5149
C5148
88E8001
CPUTEST29H
D4203
D4004
u6202
R6130
R6503
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BD201F
Abstract: BDX77F BD203F BD202F BD204F BDX78F
Text: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .
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BD201F;
BD203F;
BDX77F
7110a2b
T-33-0
OT186
BD202F,
BD204F
BDX78F.
BD201F
BDX77F
BD203F
BD202F
BDX78F
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BD235 PHILIPS
Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its
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BD233
BD235
BD237
711002b
aSOT-32
BD234,
BD236
BD238.
BD233
BD235
BD235 PHILIPS
bd233 T
bd237 philips
BD234
BD237-10
BD237
BD238
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BLY88A
Abstract: A41E BLY88 W1032 Paver Components
Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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DQ57R27
BLY88A
to-16
BLY88A
A41E
BLY88
W1032
Paver Components
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7805 smd
Abstract: SMD transistor Mo 7805 voltage regulator IC voltage regulator 7805 7805 regulator smd transistor smd 2b SMD 7805 REGULATOR IC 7805 SMD motorola rf Power Transistor amplifier 3HH
Text: M O T O R O L A SC 4bE D X ST RS /R F • b3b7254 DG^SEEl MOTOROLA " 3 HriOTb 7^ 3 5 ~C ß SEM IC O N D U C T O R TECHNICAL DATA TP303T The RF Line U H F P o w e r T ra n sisto r The TP3031 is designed for 960 MHz base stations in both analog and digital applica
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b3b7254
TP3031
TP3031
T-33-09
7805 smd
SMD transistor Mo
7805 voltage regulator IC
voltage regulator 7805
7805 regulator smd
transistor smd 2b
SMD 7805
REGULATOR IC 7805 SMD
motorola rf Power Transistor
amplifier 3HH
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MOTOROLA POWER TRANSISTOR
Abstract: TP2033 motorola rf Power Transistor TRANSISTOR A 225
Text: MOTOROLA SC X S T R S / R F 4bE D • b3b7254 00*15172 5 « n O T b 'T-33 -'Oa\ MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA TP2033 Advance Inform ation The RF Line V H F P o w e r T ran sisto r 30 W — 225 MHz VHF POWER TRANSISTOR NPN SILICON The TP2033 has been specifically designed and characterized fo r 12.5 V operation in
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b3b7254
TP2033
TP2033
145D-01,
Va2033
T-33-09
MOTOROLA POWER TRANSISTOR
motorola rf Power Transistor
TRANSISTOR A 225
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2009-6F
Abstract: No abstract text available
Text: BDT92F; BDT94F BDT96F PHILIPS INTERNATIONAL SbE ]> • 711DÖEfc> Q 0 4 3 3 M D S13 ■ P H I N T -3 3 -O t SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOT186 envelope with an electrically insulated mounting base.
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BDT92F;
BDT94F
BDT96F
aSOT186
BDT91F,
BDT93Fand
BDT95F.
BDT92F
711Qfl5b
T-33-09
2009-6F
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PDF
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Untitled
Abstract: No abstract text available
Text: ROHM MQE CO LTD QODbGDl » h 7 > ÿ ^ ^ / T ransistors fi H RHM 2SD1832 7=53-0 9 7° U - i - M N PN v y =1 > S 7 > V * $ Freq. Power Amp. 2 S D 1 3 S 2 Triple Diffused Planar NPN Silicon Transistor • • # Jfi\ |‘i£I§I/D im ensions Unit : mm fô J â
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2SD1832
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE SSE D • 1,1,53=131 D O I U S S a ■ BD T29; 29A BD T29B; 29C r - 33 -07 SILICON EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BDT30 series.
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BDT30
TIP29
BDT29
bbS3T31
T-33-Q9
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PDF
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. • bbS3Ci3;L DDlaSb3r ^ ■ BU306F BU307F J N AflER P H I L I P S / ] I S CRETE 2SE D T -5 3 '^ 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically
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BU306F
BU307F
OT186
BU306F
T-33-09
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PDF
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE ESE D 1^53=131 0011721 T • BDT41F;41AF; BDT41BF;41CF T -33-0? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT42F, BDT42AF, BDT42BF, and BDT42CF.
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BDT41F
BDT41BF
OT186
BDT42F,
BDT42AF,
BDT42BF,
BDT42CF.
BDT41F
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PDF
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TP2330
Abstract: TP2330F TP232 TP2325 Styx
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA TP232$ Advance Information Th e R F U ne VH F Pow er T ran sisto r 2S W — 1 7 5 MHz VHP POWER The TP2325 i f d o atg rw j fo r u m Mi \2$> V V H f am p ktlars o p ia tin g imuU* G fta s A , B of C co o d ilk xts. I » « n s u v K tio n
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TP2325
2SW-P04i,
TP232^
145M1.
CMM40*
2-11S9
TP2330
TP2330F
TP232
Styx
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PDF
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R3309
Abstract: 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF
Text: • ^53=131 OGlTbñi 7 BDT31F; 31AF BDT31BF; 31CF BDT31DF 2SE D N AMER PHILIPS/DISCRETE r - 3 3 - 0 7 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envGlope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed
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BDT31F;
BDT31BF;
BDT31DF
r-33-07
OT186
BDT32F,
BDT32AF,
BDT32BF,
BDT32CF,
BDT32DF.
R3309
31DF 4 7
31af
BDT31F
R3307
31df
MSI MS-5
IS551
BDT31DF
BDT32AF
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PDF
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BD239
Abstract: tp 9054 B0239A b0239c BD239A BD239B BD239C BD240 BD240C IBD239B
Text: V N AMER PHILIPS/DISCRETE _ 2SE D 1I • . * ^53=131 001^303 5 ■ ^ ! BD239; BD239A J I B D 2 3 9 B ; BD239C T - 3 £ ~ £ > ? SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier
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BD239;
BD239A
IBD239B;
BD239C
T-3S-07
BD240;
BD240C.
BD239
BD239A
BD239
tp 9054
B0239A
b0239c
BD239B
BD239C
BD240
BD240C
IBD239B
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PDF
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2SA968B
Abstract: 2SC2238B AC75
Text: 45E D Bi SDS7ZSD □ □17fiDcì □ « T O S M TOSHIBA TRANSISTOR_ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2SC2238B (DISCRETE/OPTO) Unit in POWER AMPLIFIER APPLICATIONS. 1Q .3M A X. DRIVER STAGE AMPLIFIER APPLICATIONS.
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17fiDcl
100MHz
2SA968B.
2SC2238B
-55VL50
2SA968B
2SC2238B
AC75
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PDF
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transistor B42
Abstract: No abstract text available
Text: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits
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RZB06050W
711DfiEti
711Dfl2b
transistor B42
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PDF
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Untitled
Abstract: No abstract text available
Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.
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PZ2327B15U
711Dfl2b
T-33-09
7110flEb
711065b
Q04b4c
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PDF
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S6157
Abstract: 2N4922 2N4918 2N4919 2N4920 2N4921 2N4923
Text: • 7 c]2eì237 DDSqBCn £ Z 7 S C S -T H 0 M S 0 N m 7# S G S-THOMSON b ■ ' 7 V 2 > 3 - 0 ¿\ 2N 4918/19/20 2N 4921/22/23 3 QE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The 2N4921, 2N4922 and 2N4923 are silicon epi taxial planar NPN transistors in Jede TO-126 plastic
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SelS37DQEc130^
2N4918/19/20
2N4921/22/23
2N4921,
2N4922
2N4923
O-126
2N4918,
2N4919
2N4920
S6157
2N4918
2N4921
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PDF
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RZB06050W
Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design
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RZB06050W
FO-57C
711Dfi2fci
T-33-09
RZB06050W
transistor B42
Transistor 2TD
476 capacitor
100B102KP50X
capacitor 476
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PDF
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Wf VQE 23 F
Abstract: WF VQE 23 E WF VQE 12 WF VQE 13 wf vqe 23 TIP42AF TIP41 41AF wf vqe 14 e TIP42CF
Text: TIP41F; 41AF TIP41BF; 41CF PHILIPS INTER N A T I O N A L SbE ]> • 711DôEb 004352b TOS ■ P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.
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OCR Scan
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TIP41F;
TIP41BF;
711DfiEb
004352b
OT186
TIP42F,
TIP42AF,
TIP42BF
TIP42CF.
TIP41F
Wf VQE 23 F
WF VQE 23 E
WF VQE 12
WF VQE 13
wf vqe 23
TIP42AF
TIP41
41AF
wf vqe 14 e
TIP42CF
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PDF
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transistor rf cm 1104
Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
Text: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and
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BLY92A
T-33-Ã
OT-48/2.
transistor rf cm 1104
BLY92A
transistor rf m 1104
transistor m 1104
TRANSISTOR D 1978
T3309
4312 020 36640
transistor 1971
1102 transistor
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PDF
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HU09
Abstract: bd955 BD953F BD949F BD950F BD951F BD952F BD954F BD955F BD956F
Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 0 0 4 3 1 0 b ST3 « P H I N T- SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each ina SOT186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F.
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BD949F;
BD951F
BD953F;
BD955F
7110fl2b
004310b
OT186
BD950F,
BD952F,
BD954F
HU09
bd955
BD953F
BD949F
BD950F
BD952F
BD955F
BD956F
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PDF
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PZ2327B15U
Abstract: No abstract text available
Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711DflSb DDMb4flfl QM3 ■ P H I N 7 ^ 3 3 -0 ? MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.
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PZ2327B15U
711DflSt
711dfleb
t-33-09
7110fl5b
PZ2327B15U
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PDF
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BDT95F
Abstract: BDT91F BDT92F BDT93F BDT96F
Text: BDT91F; BDT93F BDT95F pHILIPS INT ERNATIONAL SbE D • 711GÔSb G04333D b74 ■ P H I N 7^ - 3 3 - ^ ? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S O T186 envelope w ith an electrically insulated mounting base. PNP complements are B D T 92F , BD T94Fand B D T 96F .
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OCR Scan
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BDT91F;
BDT93F
BDT95F
711DflSb
D04333D
BDT92F,
BDT94Fand
BDT96F.
BDT91F
OT186.
BDT95F
BDT92F
BDT96F
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PDF
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