1540ct
Abstract: No abstract text available
Text: ea PBYR1535CT PBYR1540CT PBYR1545CT ” N AMER PHILIPS/DISCRETE 2SE D Q btiS3T31 0023=147 7 _ • SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES ~~ ~T-C>2-1~7 Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended for use in
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PBYR1535CT
PBYR1540CT
PBYR1545CT
btiS3T31
conR1540CT
bS3T31
1540ct
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TT 2222
Abstract: No abstract text available
Text: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile
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btiS3T31
OT-119)
BLV45/12
TT 2222
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BGY94C
Abstract: BGY94A BGY94B A08 RF Amplifier
Text: N AUER PHILIPS/DISCRETE DEVELOPM ENT DATA1• GbE D ■ btiS3T31 Ü013514 ■ This data sheet contain! advance inform ation and ipecHrcatlon* are subject to change w ithout notice, BGV94A BGY94B BGY94C _ 86D 01056 D T -7*1'à<ì-C/ V . -N O R T H / A M P E R E X / D I S CRETE DbE D
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LS3T31
QG13514
BGY94A
BGY94B
BGY94C
BGY94A,
BGY94C
UT053"
0G132U
A08 RF Amplifier
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Untitled
Abstract: No abstract text available
Text: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.
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BCW31
BCW32
BCW33
bhS3T31
0Q245b7
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Untitled
Abstract: No abstract text available
Text: PBYR735 PBYR740 PBYR745 N AMER PHILIPS/DISCRETE 2SE D t>b53ci31 0022^27 1 • T -O Z -1 7 SC H O T T K Y -B A R R IE R RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended for use in
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PBYR735
PBYR740
PBYR745
btiS3T31
T-03-17
bbS3T31
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Untitled
Abstract: No abstract text available
Text: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast
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bS3T31
BUW133
-33-j3
BUW133H
BUW133
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE I UL DbE D 1 bbS3T31 0D1SDST I MRB12175YR MAINTENANCE TYPE for new design use MRB11175Y PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications.
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bbS3T31
MRB12175YR
MRB11175Y)
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Untitled
Abstract: No abstract text available
Text: ' • bbS3^31 002355b 141 ■ APX Philips Semiconductors Product specification N AHER P H IL IP S /D IS C R E T E b?E D Dual gate MOS-FETs — BF908; BF908R QUICK REFERENCE DATA FEATURES SYMBOL • High IY„I dual gate MOS-FET • Short channel transistor with high
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002355b
BF908;
BF908R
OT143
OT143R
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SOD-83
Abstract: HIGH VOLTAGE DIODE for microwave ovens lte in philips FMLM BYX90G 3 phase rectifier bb53
Text: N AMER PHILIPS/DISCRETE blE D bb53^31 O D S b b T 1! I IT T IAPX BYX90G E.H.T. A V A L A N C H E F A S T S O F T -R E C O V E R Y D IO D E * E.H.T. rectifier diode in glass envelope intended for general purpose high-voltage rectifying and also designed as sub-com ponent fo r very high voltage stacks, fo r example, in X -ra y equipm ent with fre
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BYX90G
DD2b703
SOD-83
HIGH VOLTAGE DIODE for microwave ovens
lte in philips
FMLM
BYX90G
3 phase rectifier
bb53
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PDF
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philips hybrid OM976
Abstract: OM976 philips om
Text: Philips Semiconductors bbüB^ Bl 003210^ T75 1 AP X Product specification Video output amplifier OM976 N AUER PHILIPS/DISCRETE FEATURES PINNING • DC coupled video amplifier for cathode drive, with a positive going video input PIN CONFIGURATION PIN • Low internal thermal resistance
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00321flT
OM976
OM976
philips hybrid OM976
philips om
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PDF
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BGY33
Abstract: "Amplifier Modules" Philips bgy32 Philips BGY36 VHF Power amplifier Module philips rf power amplifier module BGY32 BGY35 88-108 rf amplifier an power 88-108 mhz BGY36
Text: N AMER PHILIPS/DISCRETE • bRE » BGY32 BGY33 BGY35 BGY36 bb53T31 003Q211 4b7 H A P X VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 £2 load.
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QQ3DE11
BGY32
BGY33
BGY35
BGY36
BGY33
"Amplifier Modules"
Philips bgy32
Philips BGY36 VHF Power amplifier Module
philips rf power amplifier module
88-108 rf amplifier
an power 88-108 mhz
BGY36
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BLF545
Abstract: MCAB2 MCAB29 2322 731 capacitor 334 ceramic WCA832 sot26-8 MCA834 sot268 CS6-08
Text: Philips S em iconductors 00 30 14b ATS APX Product specification UHF push-pull power MOS transistor — — — 1 ^ _ FEATURES N BLF545 AMER PHILIPS/DISCRETE bTE » PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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GD30mt
BLF545
OT268
MCA835
MCA828
BLF545
MCAB2
MCAB29
2322 731
capacitor 334 ceramic
WCA832
sot26-8
MCA834
sot268
CS6-08
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 ^ 3 1 0 D lt7 1 ti E • B Y588 T-£>/-/6~ BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. The device is intended for use as efficiency diode in horizontal deflection circuits between base and emitter terminals
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BY588
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Untitled
Abstract: No abstract text available
Text: t.'lE D • bbSB^l QQ2 bS 4Q SSb H A P X A B Y 722 B Y 723 B Y 724 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* E H T rectifier diodes in glass envelopes intended for use in high-voltage applications e.g. the high-voltage supply of television receivers and monitors, at frequencies in excess o f 30 kHz. The devices feature non
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BY722
BY723
BY724
7Z24327
02b543
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PDF
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Untitled
Abstract: No abstract text available
Text: I I N A flE R P H IL IP S /D IS C R E T E 5SE D ^ 5 3 ^ 3 1 M A IN T E N A N C E T Y P E Q D 2577S 4 • BYW92 SERIES A 7 = 0 3 -1 *7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
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2577S
BYW92
bhS3T31
T-03-19
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PDF
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diode sy 200
Abstract: UCM0J
Text: P h ilip * S e m ic o n d u c to r* Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATU RES • Minimum 2 mm Isolation thickness between emitter and receiver • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm
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CNW11AV-1/2/3
E90700
bbS3S31
D03533L
MCB902
bb53T31
diode sy 200
UCM0J
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PDF
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m lc 945
Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS943/945/947
OT223)
BDS944/946/948.
OT223
BDS943
BDS945
BDS947
m lc 945
945 npn
947 smd
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transistor B A O 331T
Abstract: BUP23C 23CF BUP23BF BUP23CF
Text: [{ DEVELOPMENT DATA ^53=131 0013701 T • BUP23BF BUP23CF This data sheet contain» advance Information and specifications are subject to change without notice. N AUER PHILIPS/DISCRETE H5E D T “3 3 - i l SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SO T199 envelope intended for
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BUP23BF
BUP23CF
OT199
bb53T31
T-33-17
transistor B A O 331T
BUP23C
23CF
BUP23CF
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PDF
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Diode Marking 1e
Abstract: diode HOH BA223 AM radio AM band switching diode
Text: N AÍ1ER PHILIPS/DISCRETE b^E D m b b S B ^ l GQEblUS MOM I IAPX BA223 I SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA Continuous reverse voltage
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BA223
BA223
DO-34
OD-68)
7Z83041
Diode Marking 1e
diode HOH
AM radio
AM band switching diode
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BFU310
Abstract: BFU308 BFU309 L7E transistor transistor 309
Text: ^53131 Philips Semiconductors □□E3bfl4 TT7 APX Preliminary specification N-channel silicon field-effect transistors mi N AHFR FEATURES BFU308/309/310 PHT I T P S / D T S f R F T F L7F D PIN CONFIGURATION • Low noise • Interchangeability of drain and
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BFU308/309/310
PINNING-TO-18
BFU308
BFU309
BFU310
total00
BFU308,
bfu308/309/310
BFU310
BFU309
L7E transistor
transistor 309
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV948
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PDF
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BB530
Abstract: No abstract text available
Text: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.
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BF245A
BF245A/0
0023SD4
bhS3T31
7Z62701
hbS3T31
BB530
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors bt.S3R31 O O E ^ m HT5 W A P X P roduct spe cifica tion VHF power MOS transistor BLF225 — N AUER PHILIPS/DISCRETE FEATURES blE » PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.
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S3R31
BLF225
OT123
-SOT123
bbS3T31
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PDF
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Untitled
Abstract: No abstract text available
Text: • ^ 53^31 □□25hfll 0b2 ■ APX N APIER PHILIPS/DISCRETE BT148W SERIES b?E D J v THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable fo r surface mounting. They are intended fo r general purpose switching and phase-control applications.
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25hfll
BT148W
OT-223
-400R
OT-223
btiS3T31
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