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    C12 5T Search Results

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    C12 5T Price and Stock

    Diodes Incorporated DDTC125TE-7

    TRANS PREBIAS NPN 150MW SOT523
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    DigiKey DDTC125TE-7 Reel 3,000 3,000
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    • 10000 $0.075
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    DDTC125TE-7 Cut Tape 2,897 1
    • 1 $0.36
    • 10 $0.243
    • 100 $0.36
    • 1000 $0.11458
    • 10000 $0.11458
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    DDTC125TE-7 Digi-Reel 2,897 1
    • 1 $0.36
    • 10 $0.243
    • 100 $0.36
    • 1000 $0.11458
    • 10000 $0.11458
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    Diodes Incorporated DDTC125TCA-7

    TRANS PREBIAS NPN 200MW SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DDTC125TCA-7 Reel 3,000 3,000
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    Diodes Incorporated 74AHC125T14-13

    IC BUF NON-INVERT 5.5V 14TSSOP
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    DigiKey 74AHC125T14-13 Cut Tape 1,015 1
    • 1 $0.61
    • 10 $0.378
    • 100 $0.2416
    • 1000 $0.16563
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    74AHC125T14-13 Digi-Reel 1,015 1
    • 1 $0.61
    • 10 $0.378
    • 100 $0.2416
    • 1000 $0.16563
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    Avnet Americas 74AHC125T14-13 Reel 8 Weeks 2,500
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    • 10000 $0.05046
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    TME 74AHC125T14-13 5
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    • 100 $0.09
    • 1000 $0.081
    • 10000 $0.075
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    Avnet Silica 74AHC125T14-13 2,500 10 Weeks 2,500
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    New Advantage Corporation 74AHC125T14-13 2,500 1
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    Analog Devices Inc LT6656AIDC-1.25-TRMPBF

    IC VREF SERIES 0.1% 6DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT6656AIDC-1.25-TRMPBF Cut Tape 937 1
    • 1 $10.4
    • 10 $7.244
    • 100 $5.5212
    • 1000 $5.08056
    • 10000 $5.08056
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    LT6656AIDC-1.25-TRMPBF Digi-Reel 937 1
    • 1 $10.4
    • 10 $7.244
    • 100 $5.5212
    • 1000 $5.08056
    • 10000 $5.08056
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    LT6656AIDC-1.25-TRMPBF Reel 500 500
    • 1 -
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    • 1000 $4.58951
    • 10000 $4.81222
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    Analog Devices Inc LT6656ACDC-1.25-TRMPBF

    IC VREF SERIES 0.1% 6DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT6656ACDC-1.25-TRMPBF Cut Tape 448 1
    • 1 $9.55
    • 10 $6.617
    • 100 $5.0141
    • 1000 $4.60392
    • 10000 $4.60392
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    LT6656ACDC-1.25-TRMPBF Digi-Reel 448 1
    • 1 $9.55
    • 10 $6.617
    • 100 $5.0141
    • 1000 $4.60392
    • 10000 $4.60392
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    Find more C12 5T price and stock on Findchips.com

    C12 5T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    159C

    Abstract: TB159C SR401 SR-401 470PF UT34-17 10NF Torroid 125mu 100WPEP
    Text: C17 22uF Tantalum Vds=28Vdc 850mu Torroid 10K Pot OUT V Regulator IN ADJUST L14 18AWG 5turns .130in dia C13 10NF T2 R2 15 T1 C4 470PF C15 L18 18AWG 10NF 15turns C16 47UF63V Electrolytic R7 10K T3 R3 10K C7 470PF UT34-17 UT 85-15 T4 RF out C5 8.2 PF UT56-50


    Original     		PDF 28Vdc 850mu 18AWG 130in 470PF 15turns 47UF63V UT34-17 159C TB159C SR401 SR-401 470PF UT34-17 10NF Torroid 125mu 100WPEP

    diode c12

    Abstract: zener c18 hp DIODE C13 C13P zener 18 01UF 12NH 18PF 30PF LK802
    Text: RF in C6 1PF 7 2500mu Ferr Long UT34-25 1.3in C4 18PF C5 18PF 19 L2 12NH 4 C3 7.5PF R2 1.5K R1 1.5K 17 22 C1 3PF 10K pot 10K pot 2 1 General 24 HP 7.5V 18 18AWG 5turns C9 30PF 63V,47uf C10 3.6PF C8 30PF 63V,47uf Vds=28Vdc 1.6in Sheet TB 150 1 470 - 860MHz , 45W, 28V


    Original     		PDF 2500mu UT34-25 18AWG 28Vdc 860MHz TB-150 860MHz diode c12 zener c18 hp DIODE C13 C13P zener 18 01UF 12NH 18PF 30PF LK802

    Untitled

    Abstract: No abstract text available
    Text: 64 J9 Header, DNP 1 2 3 4 5 6 L1 Demonstration Board – EPC9102 Schematic VIN VIN_FILT 1 Q19 GPUL J1 Q21 EPC2001 EPC2001 GPUR C3, C6, C9 Rev. 1.0 C39, C42 A 2.2uF DNP PRYSWB T2 PRYSWA A 5T ER18 R6 10 D9 BAT41 VIN_FILT J4 5 5 4 2 C36 0.1U EPC2001 1 GND D2


    Original     		PDF EPC9102 EPC2001 BAT41 LP2985 LM5113

    ne5550

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550

    11Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		PDF MRF6404 DCS1800 PCS1900/Cellular MRF6404 11Z4

    CD 1691 CB

    Abstract: ba 3917 SM5308 sm5308bs pinout of ic 4078
    Text: SM5308BS 3-channel Video Buffer with Built-in wideband LPF OVERVIEW The SM5308BS is a 3-channel video buffer with built-in 5th-order lowpass filters. The lowpass filter cutoff frequency range can adjust from 5.0MHz to 44MHz*1 by 256 steps. The lowpass filter supports 480i to 1080i format, video signal equipment analog input/outputs. For video input systems, the device functions as a next-stage


    Original     		PDF SM5308BS SM5308BS 44MHz 1080i NC0507CE CD 1691 CB ba 3917 SM5308 pinout of ic 4078

    ILI9325

    Abstract: G85 wafer format ILI9325DS ili9325 lcd
    Text: ILI9325 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Preliminary Version: V0.28 Document No.: ILI9325DS_V0.28.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096


    Original     		PDF ILI9325 240RGBx320 ILI9325DS Figure52 ILI9325 G85 wafer format ili9325 lcd

    9601 TO 220

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1) 9601 TO 220

    ILI9328

    Abstract: st g315 diode wd lcd wd 969 ir
    Text: ILI9328 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Version: V0.1 Document No.: ILI9328DS_V0.1.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096


    Original     		PDF ILI9328 240RGBx320 ILI9328DS Figure52 ILI9328 st g315 diode wd lcd wd 969 ir

    ILI9325

    Abstract: ILI9325DS ILI9325D ILI ILITEK ILI9325 240RGBx320 a-Si 262K color TFT ILItek wd 969 ir HD 4480 LCD rm1 4607 circuit diagram ili9325ds_v0.35
    Text: ILI9325 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Preliminary Version: V0.35 Document No.: ILI9325DS_V0.35.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096


    Original     		PDF ILI9325 240RGBx320 ILI9325DS ILI9325 ILI9325D ILI ILITEK ILI9325 240RGBx320 a-Si 262K color TFT ILItek wd 969 ir HD 4480 LCD rm1 4607 circuit diagram ili9325ds_v0.35

    350 pf variable capacitor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1) 350 pf variable capacitor

    TDK Ferrite Balun

    Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 TDK Ferrite Balun FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6

    MRFE6VP61

    Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT

    NEC 09030

    Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
    Text: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are


    Original     		PDF NEM090303M-28 NEM090303M-28 PU10312EJ01V0DS NEC 09030 8712 RESISTOR ldmos nec

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)

    mrfe6vp61k25h

    Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon

    TRANSISTOR A331

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		PDF MRF6404/D MRF6404 DCS1800 PCS1900/Cellular MRF6404 MRF6404/D TRANSISTOR A331

    TRANSISTOR A331

    Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		PDF MRF6404/D MRF6404 MRF6404K MRF6404 DCS1800 PCS1900/Cellular MRF6404/D* TRANSISTOR A331 transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    capacitor 104 Z5

    Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to


    Original     		PDF MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular capacitor 104 Z5 resistor A331 TRANSISTOR A331 A153 A331 motorola 572 transistor 150 watts power amplifier layout ATC 100A

    LQW18AN4R7NG00

    Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
    Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0


    Original     		PDF NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01

    37281

    Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
    Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics


    Original     		PDF MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular 37281 TRANSISTOR A331 transistor 31C resistor A331 A153 A331

    08051J5R6BBT

    Abstract: j452 cms 920
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage


    Original     		PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 08051J5R6BBT j452 cms 920

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 37E 3 M3D2271 □ □ S S 3 C12 fl IHAS Technical D a ta _ T -M 3 -2 1 CD54/74AC20 CD54/74A C T20 1A Advance Information Dual 4-Input NAND Gate IB 1C 10 2A Type Features: • Typical propagation delay AC20 : 6 ns @ Vcc = 5 V, Ta - 25° C, C l = 50 pF


    OCR Scan     		PDF M3D2271 CD54/74AC20 CD54/74A CD54/74ACT20 CD74AC20 CD74ACT20 14-lead 92CS-38928R2