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    DOUBLE SLUG TUNER Search Results

    DOUBLE SLUG TUNER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSPMDB09MF-002.5 Amphenol Cables on Demand Amphenol CS-DSPMDB09MF-002.5 9-Pin (DB9) Premium D-Sub Cable - Double Shielded + EMI Cage - Male / Female 2.5ft Datasheet
    CS-DSPMDB09MM-010 Amphenol Cables on Demand Amphenol CS-DSPMDB09MM-010 9-Pin (DB9) Premium D-Sub Cable - Double Shielded + EMI Cage - Male / Male 10ft Datasheet
    CS-DSPMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSPMDB25MM-010 25-Pin (DB25) Premium D-Sub Cable - Double Shielded + EMI Cage - Male / Male 10ft Datasheet
    MP-54RJ45DNNE-100 Amphenol Cables on Demand Amphenol MP-54RJ45DNNE-100 Cat5e STP Double Shielded Patch Cable (Braid+Foil Screened) with RJ45 Connectors - 350MHz CAT5e Rated 100ft Datasheet
    CS-DSPMDB09MM-001 Amphenol Cables on Demand Amphenol CS-DSPMDB09MM-001 9-Pin (DB9) Premium D-Sub Cable - Double Shielded + EMI Cage - Male / Male 1ft Datasheet

    DOUBLE SLUG TUNER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SF-11N

    Abstract: SF-31N FXR SF-31N BNC T connectors INSERTION LOSS Microlab FXR QQ-S-365 SF-10B SF-10F SF-10N SF-10T
    Text: MICROLAB/FXR Double Slug Tuners SF series ♦ ♦ ♦ ♦ ♦ ♦ Dual Impedance Transformer 300 to 5,000 MHz Ideal for Amplifier Stability Testing Adjustment Locking Long Life Beryllium Copper Contacts 500 Watt Average Power Rating N Connectors Standard Noise Free Operation


    Original     		SF-10N SF-11N SF-30N SF-31N QQ-S-365 SF-10B SF-10T SF-10F SF-11N SF-31N FXR SF-31N BNC T connectors INSERTION LOSS Microlab FXR QQ-S-365 SF-10B SF-10F SF-10N SF-10T PDF

    ACU50751

    Abstract: dth set up box circuit
    Text: A ARA05050S12 CATV Reverse Amplifier w/ Step Attenuator Advanced product information Rev. 5 FEATURES • Integrated monolithic GaAs amplifier and step attenuator. • Compatible with all digital and analog modulation types. • Frequency range: 5 - 100 MHz. • Gain: 0 - 30 dB, variable in 2 dB steps.


    Original     		ARA05050S12 ARA05050 ACU50751 dth set up box circuit PDF

    ACU50751

    Abstract: settop box block diagram double slug tuner amp rj45 2N3904 2N3906 ACD0900 ARA05050 ARA05050S12 S12C
    Text: A ARA05050S12 CATV Reverse Amplifier w/ Step Attenuator Advanced product information Rev. 6 FEATURES • Integrated monolithic GaAs amplifier and step attenuator. • Compatible with all digital and analog modulation types. • Frequency range: 5 - 100 MHz. • Gain: 0 - 30 dB, variable in 2 dB steps.


    Original     		ARA05050S12 ARA05050 ACU50751 settop box block diagram double slug tuner amp rj45 2N3904 2N3906 ACD0900 ARA05050S12 S12C PDF

    ACU50751

    Abstract: 3 pins Variable resistor 5K ohm CATV MODULATOR 2N3904 2N3906 ACD0900 ARA05050 ARA05050S12 S12C Variable resistor 5K ohm
    Text: A ARA05050S12 CATV Reverse Amplifier w/ Step Attenuator Advanced product information Rev. 6 FEATURES • Integrated monolithic GaAs amplifier and step attenuator. • Compatible with all digital and analog modulation types. • Frequency range: 5 - 100 MHz.


    Original     		ARA05050S12 ARA05050 ACU50751 3 pins Variable resistor 5K ohm CATV MODULATOR 2N3904 2N3906 ACD0900 ARA05050S12 S12C Variable resistor 5K ohm PDF

    QPSK-16/QAM-Modulator

    Abstract: QAM-Modulator ARA1400I ARA1400
    Text: ARA1400IS12 CATV Reverse Amplifier with Step Attenuator Advanced Product Information Rev. 0 FEATURES • · · · · · Low cost integrated monolithic GaAs amplifier and step attenuator with output disconnect switch. Meets DOCSIS distortion requirements at


    Original     		ARA1400IS12 ARA1400IS12 QPSK-16/QAM-Modulator QAM-Modulator ARA1400I ARA1400 PDF

    CATV RF AGC Amplifier

    Abstract: X6959M video mixer circuit diagram cable tv amplifier RF AGC Amplifier rf mixer 200-250 mhz RF Mixer for 200-250 MHz ISG510065 TSSOP-20 land pattern for TSSOP-20
    Text: PRELIMINARY DATA SHEET ISG510065 CATV OUT-OF-BAND TUNER FEATURES FUNCTIONAL DIAGRAM EPCOS X6959M SAW FILTER • 3.3 V SINGLE SUPPLY OPERATION • LOW POWER CONSUMPTION 400 mW VDD • LOW DISTORTION 28,18 27,17 26,19 25, X 24,15 23,14 22,13 • 82 dB TOTAL CONVERSION GAIN


    Original     		ISG510065 X6959M ISG510065 TSSOP-20 CATV RF AGC Amplifier X6959M video mixer circuit diagram cable tv amplifier RF AGC Amplifier rf mixer 200-250 mhz RF Mixer for 200-250 MHz TSSOP-20 land pattern for TSSOP-20 PDF

    dth set up box circuit

    Abstract: ARA1400 ARA1400S12
    Text: A ARA1400S12 CATV Reverse Amplifier with Step Attenuator Advanced Product Information Rev. 2 FEATURES • · · · · · Low cost integrated monolithic GaAs amplifier and step attenuator with output disconnect switch. Meets DOCSIS distortion requirements at


    Original     		ARA1400S12 ARA1400S12 dth set up box circuit ARA1400 PDF

    Untitled

    Abstract: No abstract text available
    Text: A ARA1400IS12 CATV Reverse Amplifier with Step Attenuator Advanced Product Information Rev. 0 FEATURES • · · · · · Low cost integrated monolithic GaAs amplifier and step attenuator with output disconnect switch. Meets DOCSIS distortion requirements at


    Original     		ARA1400IS12 ARA1400IS12 PDF

    616PT

    Abstract: TTN 46 16
    Text: A ARA2000S12 CATV Reverse Amplifier with Step Attenuator Advanced Product Information Rev. 0 FEATURES • · · · · · Low cost integrated monolithic GaAs amplifier with step attenuator. Attenuation Range: 0 – 56 dB, variable in 1 dB steps via serial input.


    Original     		ARA2000S12 ARA2000S12 616PT TTN 46 16 PDF

    Untitled

    Abstract: No abstract text available
    Text: E n WIGIŒ' ARA05050 CATV REVERSE AMPLIFIER WITH STEP ATTENUATOR Advanced Product Information Rev 2 D e s c r ip t io n F eatures The ARA05050 is a GaAs 1C designed to perform the reverse path amplification and output level control functions in a CATV Set-Top Box or Cable


    OCR Scan     		ARA05050 ARA05050 PDF

    application for bt 151

    Abstract: LTE42005S LTE42008R R3305
    Text: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		bL53131 LTE42005S LTE42008R LTE42005S application for bt 151 LTE42008R R3305 PDF

    Untitled

    Abstract: No abstract text available
    Text: M i N AMER PHILIPS/DISCRETE ObE D • bbS3T31 _ J v □D150T1 T ■ PTB23001X PTB23003X PTB23005X T - 1 3 -o s '' T -IZ -O J MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		bbS3T31 D150T1 PTB23001X PTB23003X PTB23005X PTB2300d PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		LTE42005S LTE42008R PDF

    Untitled

    Abstract: No abstract text available
    Text: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		001S1DS bhS3T31 PTB32001X PTB32003X PTB32005X PTB32001X. r-33-07 PDF

    copper permittivity

    Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 permittivity marking J6 transistors
    Text: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors PINNING - SOT44QA FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency


    OCR Scan     		OT440A PTB23001X; PTB23ansistors PTB23005X PTB23005X. PTB23003X; OT440A. copper permittivity PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 permittivity marking J6 transistors PDF

    75307

    Abstract: PTB23001X PTB23003X PTB23005X T-33-O
    Text: M ObE D N AMER P H I L I P S / D I S C R E T E DG15Cm ^ 5 3 ^ 3 1 T • PTB23001X PTB23003X PTB23005X T ­ 3 3 T - -0 *7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		iki53ci31 DG15Cm PTB23001X PTB23003X PTB23005X G01S1Q3 PTB23001X 75307 PTB23005X T-33-O PDF

    IC BL 176A

    Abstract: No abstract text available
    Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan     		LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA IC BL 176A PDF

    409 Marking Code

    Abstract: Data Handbook sc15
    Text: Philips Semiconductors Product specification LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors FEATURES DESCRIPTION • Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal


    OCR Scan     		LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S OT442A LBE2003S LBE2009S 409 Marking Code Data Handbook sc15 PDF

    r3305

    Abstract: PTB32005X PTB32001X PTB32003X
    Text: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		PTB32001X PTB32003X PTB32005X bfci53cà 001510e} PTB32003X r3305 PTB32005X PDF

    bel 187 transistor

    Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
    Text: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan     		LBE/LCE2003S LBE/LCE2009S LBE2Q03S LBE2009S LCE2003S LCE2009S LBE/LCE200Striplines bel 187 transistor RTC406 LBE2003S BEL 187 npn PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D • bbS3T31 0015115 4 ■ PTB42003X T - 33 - 0 7 MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.


    OCR Scan     		bbS3T31 PTB42003X PDF

    PTB42003X

    Abstract: No abstract text available
    Text: l'P-33'Ol PTB42003X \_ PHILIPS INTERNATIONAL St.E D • 7110fl2b DD4b44fl Mb? ■ P H I N MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.


    OCR Scan     		V33-07 PTB42003X 7110fl2b DD4b44Ã easTB42003X T-33-07 711002b DGMb451 PTB42003X PDF

    Zn33

    Abstract: MARKING 41B IEC134 PTB42003X dust cap LC f041b 2A marking code marking code 41b marking TI33
    Text: « N AMER P H I L I P S / D I S C R E T E bbS3T31 OkE D 00 15115 A M I PTB42003X T - 33 -¿> *7 MICROW AVE POW ER TRA N SISTO R N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.


    OCR Scan     		PTB42003X wiPTB42003X 0Q1511Ã Zn33 MARKING 41B IEC134 PTB42003X dust cap LC f041b 2A marking code marking code 41b marking TI33 PDF

    TRANSISTOR K 314

    Abstract: MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083
    Text: V-3 3 '0 7 PTB42003X / \ _ PHILIPS INTERNATIONAL 5L.E D • 711D05b 004b44fl Mb? ■ PHIN MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.


    OCR Scan     		V33-07 PTB42003X 004b44fl TRANSISTOR K 314 MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083 PDF