DQ86 Search Results

ACT-D16M96S

Abstract: BSA1 BS-B1
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

DQ124

Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Contextual Info: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

DQ112

Abstract: UG016C14488HSG-6 DQ100 DQ88
Contextual Info: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

sht22

Abstract: SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2
Contextual Info: 5 EBSA-110 SHEET SIG 4 Schematic PREFIXES 3 2 BAN#=EBSA-110 REV#=REVB Directory 1 - STRONGARM SHT20, C 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 - Debug sht 5 - SSRAM sht 6 BUF_, IO_ Address sht 7 MUX_, SIM_ DRAM sht 8 CTA_, CTB_ Control sht 9 CTA_, CTB_

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8

MT18DT8144G

Contextual Info: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM

Contextual Info: SMART SM390HGSFN3UGUU Modular Technologies September 28, 1998 Revision History • September 28, 1998 Datasheet Released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

smart modular

Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Contextual Info: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

Contextual Info: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics March 18, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 Low Power 1M x 16 Synchronous Dynamic Random Access Memory Chips in one MCM

Contextual Info: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics May 30, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 1M x 16 synchronous dynamic random access memory chips in one MCM

DQ85

Contextual Info: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module - H eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL

ACT-D1M96S

Contextual Info: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ 6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks

SiS301

Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Contextual Info: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.

SDRAM aeroflex micron die

Abstract: CKE 2009 4164 dram 524,288-word x 16-bit MT48LC16M16A2 Y16Y BA1182 DQ86 BA872
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

Contextual Info: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation

tsop 138

Abstract: DQ114
Contextual Info: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation

DQ77

Abstract: SMART Modular Technologies SM51441000LP-07 SM51441000LP-08 dram memory module 1993 DQ114
Contextual Info: SM51441000LP January 1993 Rev 0 SMART Modular Technologies SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

dq96

Contextual Info: SM544044004X5GU June 1997 Rev 1 SMART Modular Technologies SM544044004X5GU 64MByte 4M x 144 CMOS DRAM Module General Description Features The SM544044004X5GU is a high performance, 64-megabyte dynamic RAM module organized as 4M words by 144 bits, in a 100-pin, dual readout, leadless,