sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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Original
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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PDF
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Untitled
Abstract: No abstract text available
Text: STH150N10F7-2, STP150N10F7 N-channel 100 V, 0.0038 Ω typ., 90 A, STripFET VII DeepGATE™ Power MOSFET in H2PAK-2 and TO-220 packages Datasheet − preliminary data Features Order codes 7$% STH150N10F7-2 TAB STP150N10F7 3 H2PAK-2 RDS on max 100V 0.0045 Ω
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Original
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STH150N10F7-2,
STP150N10F7
O-220
STH150N10F7-2
O-220
AM15557v1
DocID024552
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PDF
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dinverter 768r
Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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Original
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HEF4527BT
HEF4531BT
HEF4534BP
HEF4534BT
MSP-STK430X320
AD9054/PCB
AD9054BST-135
IPS521G
IPS521S
IRL2203S
dinverter 768r
G7D-412S
Ericsson Installation guide for RBS 6201
OMRON G7d
TH3 thermistor
6201 RBS ericsson user manual
TMS77C82NL
reed relay rs 349-355
i ball 450 watt smps repairing
RBS -ericsson 6601
|
PDF
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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Original
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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PDF
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Untitled
Abstract: No abstract text available
Text: STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in I2PAK and TO-220 packages Datasheet − preliminary data Features Order codes VDS RDS on max 100 V 0.0042 Ω STI150N10F7 ID PTOT 110 A 250 W STP150N10F7
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Original
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STI150N10F7,
STP150N10F7
O-220
STI150N10F7
O-220
DocID024552
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PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C
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Original
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IXFK100N10
IXFN150N10
O-264
ID120
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PDF
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150N10
Abstract: 100n10 E 150N10
Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C
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Original
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IXFK100N10
IXFN150N10
O-264
ID120
100N10
150N10
150N10
E 150N10
|
PDF
|
Ericsson Installation guide for RBS 6000
Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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Original
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304X264X130
CL200
TC554001FI-85L
TC554001FTL-70
BMSKTOPAS900
BMSKTOPAS870
10/100TX
13X76
35X100
19X89
Ericsson Installation guide for RBS 6000
ericsson RBS 6000 series INSTALLATION MANUAL
Philips Twin Eye PLN 2032
ERICSSON RBS 6000
Ericsson RBS 6000 hardware manual
ericsson RBS 3206
dil relay 349-383
IGBT semikron 613 GB 123 CT
ericsson RBS 6000 series
Z0765A08PSC
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PDF
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E 150N10
Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C
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Original
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IXFK100N10
IXFN150N10
O-264
ID120
E 150N10
150N10
100N10
IXFK100N10
IXFN150N10
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PDF
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150N10F7
Abstract: No abstract text available
Text: STH150N10F7-2 N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFET in a H2PAK-2 package Datasheet − preliminary data Features Order code VDS RDS on max STH150N10F7-2 100 V 0.0039 Ω ID PTOT 110 A 250 W • 100% avalanche tested
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Original
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STH150N10F7-2
STH150N10F7-2
STH150N10Fny
DocID025859
150N10F7
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PDF
|
Untitled
Abstract: No abstract text available
Text: STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data Features Order codes VDS RDS on max 100 V 0.0042 Ω STI150N10F7 ID PTOT 110 A 250 W STP150N10F7
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Original
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STI150N10F7,
STP150N10F7
O-220
STI150N10F7
O-220
DocID024552
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PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 150 150 V V ±20 ±30
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Original
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150N15
OT-227
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PDF
|
Tf 227
Abstract: No abstract text available
Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM
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Original
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150N15
OT-227
Tf 227
|
PDF
|
150N15
Abstract: E 150N10 150N10 9100pF
Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20
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Original
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150N15
OT-227
E153432
150N15
E 150N10
150N10
9100pF
|
PDF
|
|
|
150N10L
Abstract: BSZ150N10LS3
Text: BSZ150N10LS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters VDS 100 V RDS on ,max 15 mW ID 40 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, Logic level
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Original
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BSZ150N10LS3
IEC61249-2-21
150N10L
150N10L
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PDF
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52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
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OCR Scan
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76N06-11
76N07-11
76N07-12
67N10
75N10
50N20
58N20
74N20
80N20
35N30
52N30
20n80
ixfh 60N60
IXFX 44N80
15n10
7n80
E51G
44N80
60n60
46N50
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PDF
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Untitled
Abstract: No abstract text available
Text: IXYS VDSS HiPerFET Power MOSFETs IXFK100N10 IXFN 150N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D ^025 DS on 100 V 100 A 12 mQ 100 V 150 A 12 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN vDSS
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OCR Scan
|
IXFK00N10
IXFN150N10
O-264
to150
OT-227
E153432
|
PDF
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Diode D25 N10 R
Abstract: Diode D25 N10 P
Text: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK
|
OCR Scan
|
IXFK100N10
IXFN150
O-264
OT-227
E153432
Diode D25 N10 R
Diode D25 N10 P
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PDF
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
|
OCR Scan
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100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
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PDF
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Untitled
Abstract: No abstract text available
Text: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100
|
OCR Scan
|
O-264
D-68623
100N10
150N10
4bflh25b
|
PDF
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mosfet 4800
Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055
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OCR Scan
|
200N06
200N07
150N10
100N20
106N20
73N30
44N50
48N50
58N50
61N50
mosfet 4800
ixfn27n80
150N10
IXFN44N50
RD5A
Co701
4800 power mosfet
IXFN36n60
ixfm40n30
ixfm35n30
|
PDF
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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OCR Scan
|
67N10
75N10
75N10Q
80N10Q
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
C1218
C1222
ixfh 60N60
IXFX 44N80
C1138
C1238
20n80
C1228
C1172
IXFN 230N10 230N10
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PDF
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
|
OCR Scan
|
AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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PDF
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150N10
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK 100 N10 IXFN 150 N10 V DSS ^025 100 V 100 V 100 A 150 A D DS on 12 mQ 12 mQ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Voss T, = 25 °C tO l50°C 100 100 V Voen T, = 25°C to 150°C; RGS = 1 M£2
|
OCR Scan
|
IXFK100N10
IXFN150N10
O-264
OT-227
E153432
IXFK10QN40
150N10
|
PDF
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