HY5118160
Abstract: HY5118160BTC HY5118160B
Text: HY5118160B,HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5118160B
HY5116160B
1Mx16,
16-bit
1Mx16
HY5118160
HY5118160BTC
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PDF
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HY5118160C
Abstract: HY5116160C HY5118160CJC
Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5118160C
HY5116160C
1Mx16,
16-bit
1Mx16
HY5116160C
HY5118160CJC
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PDF
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HY5116160C
Abstract: HY5118160C
Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5118160C
HY5116160C
1Mx16,
16-bit
1Mx16
10/Sep
HY5116160C
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PDF
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for
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OCR Scan
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HYM532220A
32-bit
HY5118160B
HYM532220AW/SLW/TW/SLTW
HYM532220AWG/SLWG
880mW
825mW
70MIN.
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling
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OCR Scan
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HYM536220
36-bit
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
DQ0-DQ35)
4b750flfl
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PDF
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HY5118160
Abstract: HY5118160C
Text: » M Y U H D A I * HY5118160C,HY5116160C > 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5118160C
HY5116160C
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
HY5118160
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PDF
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odq1
Abstract: HYM532120
Text: -H Y U N D A I HYM532120 W-Series 1M X 32-bit CMOS DRAM MODULE DESCRIPTION T ie HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each
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OCR Scan
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HYM532120
32-bit
HY5118160
HYM532120W/SLW/TW/SLTW
HYM532120WG/SLWG
HYM532120/SL
HYM532120T/SLT
odq1
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PDF
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HY5118160BTC
Abstract: hy5118160b
Text: "HYUNDAI HY5118160B, HY5116160B _ DESCRIPTION 1M x 16bit CMOS DRAM ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high
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OCR Scan
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HY5118160B,
HY5116160B
16bit
HY5118160BJC
HY5118160BSLJC
HY5118160BTC
HY5118160BSLTC
HY5116160BJC
HY5116160BSLJC
HY5116160BTC
hy5118160b
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PDF
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Untitled
Abstract: No abstract text available
Text: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling
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OCR Scan
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HYM536120A
36-bit
HY5118160B
HY531000A
22nFdecoupling
HYM536120AW/ALW
HYM536120AWG/ALWG
DQ0-DQ35)
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PDF
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HYM536220
Abstract: HY5118160 HYM536220W70
Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
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OCR Scan
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HYM536220
36-bit
HYM536220
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
1cd06-01-sep94
HYM536220W70
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PDF
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HYM532120A W-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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OCR Scan
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HYM532120A
32-bit
HY5118160B
HYM532120AW/ASLW/ATW/ASLTW
HYM532120AWG/ASLWG
4b750flfl
1CC03-10-DEC94
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PDF
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HY5118160
Abstract: No abstract text available
Text: HYUNDAI HYM536223 X-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536223 is a 2M x 36-bit Fast page m ode CMOS DRAM m odule consisting o f fo u r HY5118160 in 42/42 pin SOJ o r 42/50 pin TSOPII and tw o HY514403B in 24/26 pin SOJ o r TSOPII on a 72 pin glass-epoxy printed circuit
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OCR Scan
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HYM536223
36-bit
HY5118160
HY514403B
HYM536223X/TX/SLX/SLTX
HYM536223XG/TXG/SLXG/SLTXG
HYM5J62ZJ/SI.
1DD0210-FEB95
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PDF
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hy5118160b
Abstract: No abstract text available
Text: «HYUNDAI HYM536220A W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000Ain 20/26pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling
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OCR Scan
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HYM536220A
36-bit
HY5118160B
HY531000Ain
20/26pin
22nFdecoupling
HYM536220AW/LW
HYM536220AWG/LWG
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PDF
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HYM532220WG
Abstract: HYM532220 9 bit SIMM pins
Text: -HYUNDAI HYM532220 W-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each
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OCR Scan
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HYM532220
32-bit
HY5118160
HYM532220W/SLW/TW/SLTW
HYM532220WG/SLWG
HYM532220/SL
HYM532220T/SLT
HYM532220WG
9 bit SIMM pins
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PDF
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HY5118160
Abstract: No abstract text available
Text: •HYUNDAI H Y M 536123 X-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536123 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or 44/50 pin TSOPII and one HY514403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit
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OCR Scan
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36-bit
HYM536123
HY5118160
HY514403B
HYM536123X/TX/SLX
HYM536123XG/TXG/SLXG/SLTXG
DQ0-DQ35)
1DC03-10-FEB95
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PDF
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HYM564220XG
Abstract: No abstract text available
Text: HYM564220 X-Series HYUNDAI 2M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564220 is a 2M x 64-bit Fast page mode CMOS DRAM module consisting ol eight HY5118160 in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22|aF
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OCR Scan
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HYM564220
64-bit
HY5118160
16-bit
HYM564220XG/SLXG
DQ0-DQ63)
1ED01-10-APR95
HYM564220XG
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PDF
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HY5118160JC70
Abstract: HY5118160 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34
Text: HY5118160 Series • • H Y U N D A I 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5118160
16-bit
16-bit.
0-629CB1
10-2g2)
016B3
000M750
HY5118160JC70
hy5118160jc
4b75
D014G
ms3417
hy5118160jc-70
KS-5
pc145
016B34
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PDF
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y 5 1 1 8 1 6 0 S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5118160
16-bit.
HY5118160
75Dfl
1AD15-10-MAY95
HY5118160JC
HY5118160SLJC
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PDF
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hy5118160b
Abstract: WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC
Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The H Y5118160B is the new generation and fast dynam ic RAM organized 1,048,576x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
Y5118160B
16-bit.
HY5118160B
ia069
1AD54-10-MAY95
HY5118160BJC
HY5118160BSLJC
WU33
HY5118160
D08-15
tcpt 200
HD-007
HY5118160BTC
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PDF
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HY5118160
Abstract: No abstract text available
Text: 'HYUNDAI HYM536220 W-Series 2M X 36-b¡l CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
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OCR Scan
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HYM536220
36-bit
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
DQ0-DQ35)
1C006-01-SEP94
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PDF
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HY5118160B
Abstract: No abstract text available
Text: . « y u n p i n " * HY5118160B.HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1 ,0 4 8,57 6 x 16-bit configuration with Fast P age mode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5118160B
HY5116160B
1Mx16,
16-bit
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PDF
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TAA 981
Abstract: HY5118160 HY5118160JC
Text: HY5118160 Series “HYUNDAI IM X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5118160
16-bit
16-bit.
1AD15-10-MAY94
HY5118160JC
TAA 981
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PDF
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HY5118160
Abstract: IPR12 hy5118160jc AAU27
Text: HY5118160 Series •HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5118160
16-bit
16-bit.
Sc5060)
1AD15-10-MAY95
HY5118160JC
IPR12
AAU27
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PDF
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hy5118160b
Abstract: HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160
Text: HY5118160B Series •HYUNDAI 1 M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynam ic RAM organized 1,048.576 x 16-bit. The HY5118160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5118160B
16-bit
16-bit.
4b75GÃ
00047b5
1AD54-10-MAY95
HY5118160BTC60
HY5118160BJC60
HY5118160BJC
HY5118160BTC
SDIS5
HYUNDAI car
HY5118160BTC-60
5118160BJ
HY5118160
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PDF
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