Contextual Info: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for

Contextual Info: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling

HY5118160

Abstract: HY5118160C
Contextual Info: » M Y U H D A I * HY5118160C,HY5116160C > 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

odq1

Abstract: HYM532120
Contextual Info: -H Y U N D A I HYM532120 W-Series 1M X 32-bit CMOS DRAM MODULE DESCRIPTION T ie HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each

HY5118160BTC

Abstract: hy5118160b
Contextual Info: "HYUNDAI HY5118160B, HY5116160B _ DESCRIPTION 1M x 16bit CMOS DRAM ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high

Contextual Info: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

HYM536220

Abstract: HY5118160 HYM536220W70
Contextual Info: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling

Contextual Info: "HYUNDAI HYM532120A W-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for

HY5118160

Abstract: HY5118160BTC HY5118160B
Contextual Info: HY5118160B,HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

HY5118160

Contextual Info: HYUNDAI HYM536223 X-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536223 is a 2M x 36-bit Fast page m ode CMOS DRAM m odule consisting o f fo u r HY5118160 in 42/42 pin SOJ o r 42/50 pin TSOPII and tw o HY514403B in 24/26 pin SOJ o r TSOPII on a 72 pin glass-epoxy printed circuit

hy5118160b

Contextual Info: «HYUNDAI HYM536220A W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000Ain 20/26pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

HYM532220WG

Abstract: HYM532220 9 bit SIMM pins
Contextual Info: -HYUNDAI HYM532220 W-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each

capacitor 1c8

Abstract: HYM564120
Contextual Info: HYUNDAI HYM564120 X-Series 1M X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564120 is a 1M x 64-bit Fast page m ode CMOS DRAM m odule consisting of four HY5118160 in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF decoupling

HY5118160

Contextual Info: •HYUNDAI H Y M 536123 X-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536123 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or 44/50 pin TSOPII and one HY514403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit

HY5118160JC70

Abstract: HY5118160 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34
Contextual Info: HY5118160 Series • • H Y U N D A I 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY5118160C

Abstract: HY5116160C HY5118160CJC
Contextual Info: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: -HYUNDAI H Y 5 1 1 8 1 6 0 S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

hy5118160b

Abstract: WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC
Contextual Info: •HYUNDAI H Y 5 1 1 8 1 6 0 B S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The H Y5118160B is the new generation and fast dynam ic RAM organized 1,048,576x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY5118160

Contextual Info: 'HYUNDAI HYM536220 W-Series 2M X 36-b¡l CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling

HY5118160B

Contextual Info: . « y u n p i n " * HY5118160B.HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1 ,0 4 8,57 6 x 16-bit configuration with Fast P age mode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

TAA 981

Abstract: HY5118160 HY5118160JC
Contextual Info: HY5118160 Series “HYUNDAI IM X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY5118160

Abstract: IPR12 hy5118160jc AAU27
Contextual Info: HY5118160 Series •HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY5116160C

Abstract: HY5118160C
Contextual Info: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

hy5118160b

Abstract: HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160
Contextual Info: HY5118160B Series •HYUNDAI 1 M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynam ic RAM organized 1,048.576 x 16-bit. The HY5118160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide