10N100
Abstract: N100 12n100 TO204AA
Text: VDSS MegaMOSTMFET ID25 RDS on 1000 V 10 A 1.20 Ω 1000 V 12 A 1.05 Ω IXTH/IXTM 10 N100 IXTH/IXTM 12 N100 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V
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10N100
12N100
O-247
O-204
10N100
N100
12n100
TO204AA
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12n120
Abstract: No abstract text available
Text: Advance Technical Information MegaMOSTMFET VDSS = 1200 V ID cont = 12 A RDS(on)= 1.3 Ω IXTH 12N120 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous
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12N120
O-247
728B1
12n120
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
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10N100
12N100
O-247
O-204
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10N90
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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12N90
O-204
O-247
O-247
O-204
10N90
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V ID25 = 12 A RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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12N90
O-204
O-247
O-247
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10N100
Abstract: transistor ixth 12N100 N100 transistor N100
Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
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10N100
12N100
O-247
O-204
10N100
transistor ixth 12N100
N100 transistor
N100
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13N80
Abstract: 11N80
Text: VDSS MegaMOSTMFET IXTH/IXTM 11 N80 IXTH/IXTM 13 N80 800 V 800 V ID25 RDS on 11 A 0.95 Ω 13 A 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous
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11N80
13N80
O-247
O-204
O-204
13N80
11N80
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET Module VMO 380-02 F VDSS ID25 RDS on = 200 V = 385 A Ω = 4.6 mΩ 1 N-Channel Enhancement Mode 11 Preliminary data 10 Symbol Test Conditions 2 TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ 200 V V GS Continuous ±20 V
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fs600
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C150
Abstract: D-68623 megamos nf 931 diode
Text: MegaMOSTMFET Module VMO 380-02 F VDSS ID25 RDS on = 200 V = 385 A Ω = 4.6 mΩ 1 N-Channel Enhancement Mode 11 Preliminary data 10 Symbol Test Conditions 2 TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; R GS = 10 kΩ 200 V V GS Continuous ±20 V
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ixth12n100
Abstract: 12n100 3055P
Text: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000
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10N100
12N100
Cto150
O-247AD
O-204
O-204
ixth12n100
3055P
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35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTH35N30
IXTM35N25
IXTM35N30
35N25
35N30
800v mosfet
megamos 46 08 09 6
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75n08
Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)
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IXTH75N08
IXTH75N10
IXTM75N08
IXTM75N10
IXTH75N10,
IXTM75N10,
0-100V,
O-247
75n08
megamos 46 08 09 6
TL 1074 CT
Mosfet K 135 To3
p 75n08
k 1120
P-Channel MOSFET 800v
f g megamos
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ID 48 Megamos
Abstract: 35N25 IXTM35N25 ixtm35n30
Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTM35N25
IXTH35N30
IXTM35N30
O-204
O-247
IXTH350
ID 48 Megamos
35N25
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Untitled
Abstract: No abstract text available
Text: □ VDSS MegaMOS FET IXTH/IXTM 10 N90 IXTH/IXTM 12 N90 900 V 900 V ^D25 DS on 10 A 1.10 ß 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25"C to 150°C 900 VoOB Tj = 25°C to 150°C; RGg = 1 M il 900 V Vos Continuous ±20 V VGSM
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10N90
12N90
12N90
O-247
O-204
O-204
O-247
IXTH10N90
IXTM12N90
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megamos
Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4
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O-204
O-247
megamos
f g megamos
megamos 48
ID 48 Megamos
megamos 13
IXTH40N25
IXTH12N95
IXTH12N100
IXTH26N50
IXTH11N95
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a 1712 mosfet
Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Text: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous
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IXTH67N08
IXTH67N10
IXTM67N08
IXTM67N10
IXTH67N10,
a 1712 mosfet
ID 48 Megamos
K 1120
megamos 46 08 09 6
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42N15
Abstract: 079A 42N20
Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous
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D00D3b4
IXTH42N20,
IXTM42N20,
IXTH42N15
IXTM42N15
IXTH42N20
IXTM42N20
O-204
O-247
50-200V,
42N15
079A
42N20
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10N90
Abstract: U3350 12N90 D-68623 IXTH10N90 IXTH12N90 IXTM10N90
Text: v DSS MegaMOS FET IXTH/IXTM 10 N90 900 V IXTH/IXTM 12 N90 900 V p ^D25 DS on 10 A 1.10 Q 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25 °C to 150°C 900 V v DCR Tj = 25°C to 150°C; RGS = 1 Mi2 900 V V GS Continuous ±20
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O-247
10N90
12N90
O-204
O-247
00D37Ã
U3350
D-68623
IXTH10N90
IXTH12N90
IXTM10N90
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Untitled
Abstract: No abstract text available
Text: n ix Y S MegaMOS FET IXTH/IXTM 12N90 VDSS = 900 V lD25 =12 A ^D S on ” ^ N-Channel Enhancement Mode Symbol Test Conditions V DSS T j =25°C to 150°C 900 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 900 V VQS v GSM Continuous i2 0 V Transient ±30 V
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12N90
O-247
O-204
O-204
O-247
C2-72
IXTW12N90
C2-73
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3015 hj
Abstract: SK 1117
Text: 1 V A V 'C L J V DSS MegaMOS FET IXTH/IXTM10 N100 IXTH/IXTM12 N100 p ^D25 DS on 1000 V 10 A 1.20 a 1000 V 12 A 1.05 q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V *DSS Tj = 25 °C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M n
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IXTH/IXTM10
IXTH/IXTM12
10N100
12N100
O-247
O-204
12N100
IXTM12N100
100ps
3015 hj
SK 1117
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15N60
Abstract: IXTM15N60
Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r
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4bflb22b
D00034Ö
IXTH15N60,
IXTM15N60,
IXTH15N55
IXTM15N55
IXTH15N60
IXTM15N60
50-600V,
O-247
15N60
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BSC 031 N 06 NS 3
Abstract: 21N50 ixth21n50 IXTM21N50
Text: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450
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IXTH21N45
IXTH21N50
IXTM21N45
IXTM21N50
IXTH21N50,
BSC 031 N 06 NS 3
21N50
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19n50
Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
Text: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)
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IXTH19N45
IXTH19N50
IXTM19N45
IXTM19N50
000035b
19n50
megamos 48
a 1712 mosfet
lhi 778
megamos
N-channel MOSFET 800v to-247
LHi 978
megamos 13
H100
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40n50
Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
Text: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75
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50kHz
40n50
40n60 equivalent
megamos 48
40n60
40N50A
megamos
IXGM40N60A
ID 48 Megamos
f g megamos
IXGH40N60
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