Untitled
Abstract: No abstract text available
Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C
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12N100U1
12N100AU1
O-247
IXGH12N100U1
IXGH12N100AU1
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SGU1N60XFD
Abstract: No abstract text available
Text: Preliminary IGBT CO-PAK SGU1N60XFD FEATURES I-PAK * High Speed Switching * Low Saturation Voltage : VCE sat = 2.5 V (@ Ic=0.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 50nS (typ.) APPLICATIONS C * General Purpose Inverters * Lamp Ballast G E
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SGU1N60XFD
SGU1N60XFD
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siemens igbt BSM 150 gb 100 d
Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100
Text: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package
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OCR Scan
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C67076-A2105-A67
Oct-13-1995
Oct-13-1995
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 100 gb
siemens igbt BSM 150 Gb 160 d
siemens igbt BSM 50 gb 120 d
siemens igbt BSM 300
siemens igbt chip
siemens igbt BSM 100
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Untitled
Abstract: No abstract text available
Text: Power Module 1200V IGBT Family MG12300D-BN3MM Series 300A Dual IGBT RoHS Features • H igh short circuit capability,self limiting short circuit current • IGBT CHIP 1200V NPT technology • V CE(sat) with positive temperature coefficient • F ast switching and short
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MG12300D-BN3MM
E71639
MG12300D-BN3MM
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Untitled
Abstract: No abstract text available
Text: n î Y V JlQO ÌmI X A HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 V CE sat = 600 V = 75 A = 2.5 V Buck configuration Preliminary data sheet Sym bol tù ¡ l i Test C onditions V CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MQ
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OCR Scan
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50N60BD3
OT-227B,
50N60BD3
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Module 1200V IGBT Family MG12300D-BN2MM Series 300A Dual IGBT RoHS Features • H igh short circuit capability,self limiting short circuit current • F ast switching and short tail current • IGBT3 CHIP Trench+Field Stop technology • V CE(sat) with positive
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MG12300D-BN2MM
E71639
Uni2300D-BN2MM
MG12300D-BN2MM
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PDF
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IXGP12N60U1
Abstract: diode fr 307
Text: Preliminary data IXGP12N60U1 VCES Low VCE sat IGBT with Diode IC VCE(sat) Combi Pack Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 24 A I C90
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IXGP12N60U1
IXGP12N60U1
diode fr 307
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ge traction motor
Abstract: DIM400XSM65-K000
Text: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.1 October 2005 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN24289)
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DIM400XSM65-K000
DS5808-1
LN24289)
DIM400XSM65-K000
ge traction motor
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet International [iör]Rectifier IRGPC40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • PD - 9.1084 V ces = 600V Short circuit rated -10ps @ 125°C, V qe = 15V
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IRGPC40MD2
-10ps
10kHz)
125-C
00A/JJS
dutyfactors01%
O-247AC
C-398
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
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IXSK35N120AU1
O-26re
IXSK35N120AU1
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C
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IXSX35N120AU1
IXSX35N120All
O-247â
IXSX35N120AU1S)
IXSX35N120AU1S
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rthjc
Abstract: ntc 0931
Text: MUBW 15-12A6K Converter - Brake - Inverter Module CBI1 NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter V RRM = 1600V IDAVM25 = 130 A I FSM = 300 A VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V VCES = 1200 V IC25 = 19 A VCE(sat) = 2.9 V Application: AC motor drives with
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15-12A6K
IDAVM25
E72873
MUBW15-12A6K
rthjc
ntc 0931
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Untitled
Abstract: No abstract text available
Text: nixYS IGBT with Diode IXSN 80N60AU1 V CES = 600 V I = 160 A = 3 V C25 v CE sat Combi Pack Short Circuit SOA Capability Preliminary data Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGH Tj = 25°C to 150°C; RGE = 1 M n 600 A V GES Continuous
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80N60AU1
OT-227
E153432
4bflb22b
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PDF
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Untitled
Abstract: No abstract text available
Text: QIXYS IGBT with Diode IXSN 52N60AU1 VCES I C25 vCE sat Combi Pack = 600 V = 80 A = 3V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V v CGR T, = 25°C to 150°C; RGE = 1 Mi2 600 A V GES Continuous +20 V
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52N60AU1
OT-227
4bflb22b
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4013V
Abstract: Siemens DIODE E 1220 30N60B2D1
Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2D1
30N60B2D1
IC110
O-247
O-268
4013V
Siemens DIODE E 1220
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Siemens DIODE E 1220
Abstract: 30N60B2D1 30N60B ixst30n60b2d1
Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2D1
IC110
Siemens DIODE E 1220
30N60B2D1
30N60B
ixst30n60b2d1
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.24n50
Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C
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IXGH24N50BU1
IXGH24N60BU1
T0-247
24N50
24N60
.24n50
xgh2
IXGH24N60BU1
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smd diode 819
Abstract: 30n60
Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
typ200
B2-58
smd diode 819
30n60
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PDF
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z922
Abstract: IRG4PH50K 3020H
Text: International I«R Rectifier PD - 9 .1576 IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, tsc=10fis, V cc = 720V , T j = 125°C, V g e = 15V • Combines low conduction losses with high
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IRG4PH50K
10fis,
z922
IRG4PH50K
3020H
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Untitled
Abstract: No abstract text available
Text: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high
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IRG4PH20K
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Untitled
Abstract: No abstract text available
Text: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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30N60BD1
O-268
O-247
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PDF
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10n60b
Abstract: No abstract text available
Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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10N60B2D1
IC110
8-06B
405B2
10n60b
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Untitled
Abstract: No abstract text available
Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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10N60B2D1
IC110
8-06B
405B2
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PDF
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10n60b
Abstract: No abstract text available
Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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10N60B2D1
10N60B2D1
IC110
O-247
8-06B
405B2
10n60b
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