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    IXD_604 Price and Stock

    IXYS Corporation IXDD604SIATR

    Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDD604SIATR Reel 8,000 2,000
    • 1 -
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    • 10000 $0.88
    		Buy Now

    IXYS Corporation IXDN604SIATR

    Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDN604SIATR Reel 6,000 2,000
    • 1 -
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    • 1000 -
    • 10000 $0.88
    		Buy Now

    IXYS Corporation IXDI604SIATR

    Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDI604SIATR Reel 4,000 2,000
    • 1 -
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    • 10000 $0.88
    		Buy Now

    IXYS Corporation IXDD604SIA

    Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDD604SIA Tube 3,400 100
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    • 100 $0.98
    • 1000 $0.88
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    IXYS Corporation IXDD604SITR

    Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXDD604SITR Reel 2,000 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $1.7
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    IXD_604 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ixdn604pi

    Abstract: IXDD604D2 IXDN604 ixdn604sia ixdf604pi ixdd604 IXDD604PI IXDI604PI IXD_604 B054
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R03 ixdn604pi IXDD604D2 IXDN604 ixdn604sia ixdf604pi ixdd604 IXDD604PI IXDI604PI IXD_604 B054

    IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers

    Abstract: ixdi604 ixd 604 IXDN604 IXDD604 IXDF604 ixd_604 8pin dual gate driver
    Text: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers IXD_604 Gate Driver ICs are ideal for driving IXYS power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. July 6, 2010 - IXYS Corporation NASDAQ:IXYS


    Original     		PDF

    IXDN604

    Abstract: IXDI604 IXDD604 IXDN604PI IXDD604PI IXDF604 IXDD604D2 ixd_604 IXDN604SI IXDD604D2TR
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R01 IXDN604 IXDI604 IXDD604 IXDN604PI IXDD604PI IXDF604 IXDD604D2 ixd_604 IXDN604SI IXDD604D2TR

    Untitled

    Abstract: No abstract text available
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R04

    IXDN604

    Abstract: IXDF604 IXDI604 IXDD604 IXDI604SIATR IXDN 443 DFN-8
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R00A IXDN604 IXDF604 IXDI604 IXDD604 IXDI604SIATR IXDN 443 DFN-8

    IXDD604PI

    Abstract: No abstract text available
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R02 IXDD604PI

    Untitled

    Abstract: No abstract text available
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R02

    Untitled

    Abstract: No abstract text available
    Text: IXD_604SI & SIA INTEGRATED CIRCUITS DIVISION Automotive Grade 4-Ampere, Dual Low-Side, Ultrafast MOSFET Drivers Features Description • • • • The IXD_604SI and IXD_604SIA are automotive grade, dual high-speed gate drivers that are qualified according to AEC Q100 standards. Each of the two


    Original     		PDF 604SI 604SI 604SIA SIA-R02

    IXDD604D2

    Abstract: IXDD604PI ixdn604pi ixd 604 IXD604SIA IXDI604PI IXDI604SIATR IXDN604 IXDF604PI 604PI
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R00C IXDD604D2 IXDD604PI ixdn604pi ixd 604 IXD604SIA IXDI604PI IXDI604SIATR IXDN604 IXDF604PI 604PI

    Untitled

    Abstract: No abstract text available
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R06

    IXDD604

    Abstract: IXDD604SIA IXDN604 IXDN604SI ixdi604 IXDN604SIA IXDD604SI ixd_604 IXDF604SIA IXDN604PI
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -55°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R000 IXDD604 IXDD604SIA IXDN604 IXDN604SI ixdi604 IXDN604SIA IXDD604SI ixd_604 IXDF604SIA IXDN604PI

    IXD_604

    Abstract: IXDD604PI IXDN604SIATR IXDI604pi
    Text: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V


    Original     		PDF IXDD604/IXDF604/IXDI604/IXDN604 604-R05 IXD_604 IXDD604PI IXDN604SIATR IXDI604pi

    IXDD604

    Abstract: IXDD604SI IXDN604 IXDN604SI IXDD604SIA 604SI ixd_60 IXDF604SI IXDI604
    Text: IXD_604SI & SIA INTEGRATED CIRCUITS DIVISION Automotive Grade 4-Ampere, Dual Low-Side, Ultrafast MOSFET Drivers Features Description • • • • The IXD_604SI and IXD_604SIA are automotive grade, dual high-speed gate drivers that are qualified according to AEC Q100 standards. Each of the two


    Original     		PDF 604SI 604SIA IXDD604 IXDN604 SIA-R01 IXDD604SI IXDN604SI IXDD604SIA ixd_60 IXDF604SI IXDI604

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC1706 CPC1020N

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    hcpl 322j

    Abstract: hcpl-322j HCPL316
    Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 hcpl 322j hcpl-322j HCPL316

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3

    IRFD630

    Abstract: HCPL-322J HCPL322J TO-247AB
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 IRFD630 HCPL-322J HCPL322J TO-247AB

    ACPL-322J

    Abstract: MIC4452YN
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA04JT17-247 O-247AB GA04JT17 22E-47 91E-27 37E-10 36E-10 00E-3 ACPL-322J MIC4452YN

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		PDF DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 50E-3