21n50
Abstract: ixfh 26 n 49
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
21N50
24N50
26N50
ixfh 26 n 49
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Untitled
Abstract: No abstract text available
Text: IXFM21N50 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55
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IXFM21N50
Junc-Case420m
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104 k 100
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
21N50
24N50
26N50
104 k 100
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24n50
Abstract: IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
24n50
IXFH26N50
IXFH24N50
IXFH21N50
.24n50
21N50
26N50
IXFM21N50
IXYS IXFH26N50
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IXFH21N50
Abstract: IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
O-247
IXFH21N50
IXFH24N50
0225
21N50
24N50
26N50
IXFM21N50
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IXFH26N50
Abstract: IXFH21N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
IXFH26N50
IXFH21N50
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IXFH15N100
Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP
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IRFP354
O-247
IRFP360LC
2N3049DIE
2C3049
O-204AA/TO-3
IXTM20N55A
IXFH15N100
2N3051
IXFX15N100
IXFH40N30
IXFM6N90
IRFP450R
IXTH24N50L
IXTH26N50
IXFH20N50
IXFH9N80
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IXFH21N50
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500
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IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
O-247
IXFT24N50
IXFH26N50
IXFM26N50
IXFT26N50
IXFH21N50
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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mosfet 4800
Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055
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200N06
200N07
150N10
100N20
106N20
73N30
44N50
48N50
58N50
61N50
mosfet 4800
ixfn27n80
150N10
IXFN44N50
RD5A
Co701
4800 power mosfet
IXFN36n60
ixfm40n30
ixfm35n30
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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TL 650 ht
Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching
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4bfid22b
O-204
O-284
TL 650 ht
mbab
diode sy 166
ditti
IXFH26N50
MKL series
IXFN15N100
IXFMS0N20
IXFH12N100
IXFH5N100
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