IXFM24N50 Search Results

IXFM24N50 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFM24N50		IXYS	500V HiPerFET power MOSFET		Original	PDF
IXFM24N50		IXYS	HiperFET Power MOSFETS		Scan	PDF
IXFM24N50		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

IXFM24N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
SHD239608 Abstract: shd239606 Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM	Original	O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606	PDF
21n50 Abstract: ixfh 26 n 49 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous	Original	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 21N50 24N50 26N50 ixfh 26 n 49	PDF
IXFM50N20 Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413 Text: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60	Original	SHD218413 SHD2181 SHD2182 SHD2183 SHD2184 SHD2185 SHD2186 SHD2187 SHD2188 SHD218413A IXFM50N20 IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413	PDF
104 k 100 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous	Original	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 21N50 24N50 26N50 104 k 100	PDF
24n50 Abstract: IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS	Original	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 24n50 IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50	PDF
IXFH21N50 Abstract: IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS	Original	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFH21N50 IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50	PDF
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80	PDF
IXFH26N50 Abstract: IXFH21N50 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS	Original	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 IXFH26N50 IXFH21N50	PDF
IXFH21N50 Abstract: No abstract text available Text: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500	OCR Scan	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50	PDF
dioda by 238 Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100 Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching	OCR Scan	0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100	PDF
mosfet 4800 Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30 Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055	OCR Scan	200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30	PDF
1XFH12n100 Abstract: transistor 13n80 Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure	OCR Scan	4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80	PDF
TL 650 ht Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100 Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching	OCR Scan	4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100	PDF