3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
nec d 882 p transistor
transistor NEC D 587
615t
2C156
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MARCONI antennas
Abstract: marconi company 5V STANDBY grounded MARCONI antennas M198 NN12
Text: M198 CUSTOM SWITCH DRIVER FOR WIRELESS LAN AND OTHER GaAs MESFET CONTROL APPLICATIONS Features • 3 Complimentary outputs for GaAs MESFET switch control applications • Pin out compatibility with P35-4700 series wireless LAN • Narrow body SOIC 16 pin surface mount
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P35-4700
MARCONI antennas
marconi company
5V STANDBY
grounded MARCONI antennas
M198
NN12
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ATC600S
Abstract: AVX0805 AVX1206 CRF35010
Text: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has
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CRF35010F
CRF35010
CRF350
CRF35010F
ATC600S
AVX0805
AVX1206
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MGF1951A
Abstract: MGF1951A-01 MGF1951
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES
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MGF1951
MGF1951A
MGF1951A
13dBm
12GHz
MGF1951A-01
MGF1951A-01
MGF1951
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cgh60120D
Abstract: 204C gan7
Text: APPLICATION NOTE Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors Introduction The objective of this application note is to provide users of Cree wide bandgap devices with a guideline of the thermal performance of high power SiC MESFET and GaN HEMT transistors. It explains
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APPNOTE-010
cgh60120D
204C
gan7
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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SCA-11
19dBm
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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SCA-11
SCA-11
19dBm
31mil
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NE6500379A
Abstract: NE6500379A-T1
Text: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
NE6500379A-T1
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Untitled
Abstract: No abstract text available
Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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100mW
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188-114 DB 25 pin out
Abstract: 120C AX RF amplifier IC
Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of
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100mW
20dBm
188-114 DB 25 pin out
120C
AX RF amplifier IC
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TH 2066.4
Abstract: No abstract text available
Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CRF24010D
CRF24010
CRF240
CRF24010D
TH 2066.4
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60522
Abstract: 8822 TRANSISTOR CuMoCu CRF24010 CRF24010D 61256 30639
Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CRF24010D
CRF24010
CRF240
CRF24010D
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8822 TRANSISTOR
CuMoCu
61256
30639
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Untitled
Abstract: No abstract text available
Text: 8 TO 12 GHz TERMINATION INSENSITIVE MESFET DOWNCONVERTER MODEL: DBF0812HI2F FEATURES • MESFET balanced circuitry passive self biased • RF/LO coverage . 8 to 12 GHz • IF operation . 1.5 to 2 GHz • LO-to-RF isolation. 30 dB minimum
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30639
Abstract: CuMoCu Immo 65808 TH 2066.4 83348 CRF24010 CRF24010D 98737 transistor 13602
Text: CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher
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CRF24010D
CRF24010
CRF240
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CuMoCu
Immo
65808
TH 2066.4
83348
98737
transistor 13602
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k MESFET S parameter
Abstract: MGF1953A MGF1953A-01 mesfet fet
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1953A is a 100mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1953A
MGF1953A
100mW
20dBm
12GHz
MGF1953A-01
Ga107
k MESFET S parameter
MGF1953A-01
mesfet fet
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C-Band Power GaAs FET HEMT Chips
Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Text: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and
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k MESFET S parameter
Abstract: MGF1952A-01 MGF1952A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1952A
MGF1952A
17dBm
12GHz
MGF1952A-01
k MESFET S parameter
MGF1952A-01
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MGF1954A-01
Abstract: k MESFET S parameter MGF1954A
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1954A is a 200mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power
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MGF1954A
MGF1954A
200mW
23dBm
12GHz
MGF1954A-01
MGF1954A-01
k MESFET S parameter
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MESFET S parameter data sheet
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
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NES1823P-100
NES1823P-100
IMT-2000
MESFET S parameter data sheet
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Ablebond 36-2
Abstract: Multicore Solders
Text: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators
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P35-1105
12GHz
P35-1105-0
Ablebond 36-2
Multicore Solders
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It
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NES1821P-30
NES1821P-30
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Untitled
Abstract: No abstract text available
Text: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
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