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OptiFuse ANE-325A FUSE STRIP 325A 125VAC/32VDC
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DigiKey	ANE-325A	Bulk	890		1	1 $22.76 10 $21.717 100 $16.278 1000 $13.557 10000 $13.557	Buy Now
TME	ANE-325A				10	1 - 10 $29.8 100 $26.6 1000 $26.6 10000 $26.6	Get Quote
Eaton Corporation C25DNE325A Contactors - Electromechanical OP N-R 3P 25ADPCNT BXLGS W/O QC120AC
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Mouser Electronics	C25DNE325A					1 $206.06 10 $198.91 100 $193.21 1000 $193.21 10000 $193.21	Get Quote
Eaton Corporation C25DNE325A-GL Contactors - Electromechanical OP N-R 3P 25ADPCNT BXLGS W/O QC120AC
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Mouser Electronics	C25DNE325A-GL					1 $392.32 10 $370.66 100 $370.66 1000 $370.66 10000 $370.66	Get Quote
Eaton Corporation C25DNE325B-GL Contactors - Electromechanical OP N-R 3P 25ADPCNT BXLGS W/O QC240AC
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Mouser Electronics	C25DNE325B-GL					1 $431.7 10 $410.1 100 $410.1 1000 $410.1 10000 $410.1	Get Quote
Eaton Corporation C25DNE325D-GL Contactors - Electromechanical OP N-R 3P 25ADPCNT BXLGS W/O QC600VCL
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Mouser Electronics	C25DNE325D-GL					1 $431.7 10 $410.1 100 $410.1 1000 $410.1 10000 $410.1	Get Quote

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NE325 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
NE32500	NEC	Semiconductor Selection Guide	Original	PDF
NE32500	NEC	C To Ka Band Super Low Noise Amplifier N-Channel HJ-FET Chip	Original	PDF
NE32500M	California Eastern Laboratories	C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP	Original	PDF
NE32500M	NEC	C to KA band super low noise amplifier. N-channel HJ FET chip. Idss selection 50 to 90 mA.	Original	PDF
NE32500N	California Eastern Laboratories	C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP	Original	PDF
NE32500N	NEC	C to KA band super low noise amplifier. N-channel HJ FET chip. Idss selection 20 to 60 mA.	Original	PDF
NE32584	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE32584C	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE32584C	NEC	Semiconductor Selection Guide	Original	PDF
NE32584C	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE32584C	Unknown		Scan	PDF
NE32584C-S	NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET	Original	PDF
NE32584C-SL	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE32584C-T1	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF

NE32584C-T1	NEC	Ultra low noise pseudomorphic HJ FET.	Original	PDF
NE32584C-T1A	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE325S01	NEC	TRANS JFET N-CH 4V 20MA 4S01 BULK	Original	PDF
NE325S01	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE325S01	NEC	Semiconductor Selection Guide	Original	PDF
NE325S01-T1	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF

NE325 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
nec 8772 Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001 Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE	Original	NE32584C NE32584C NE32584C-S NE32584C-T1 24-Hour nec 8772 LD 7522 142.58 NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001	PDF
NE325S01 Abstract: No abstract text available Text: NE325S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 6 ohms Q1 0.6nH Rdx 6 ohms 0.69nH Lsx 0.07nH CGS_PKG 0.07pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 VTO	Original	NE325S01 001pF 3e-13 3e-12 02e-12 24-Hour NE325S01	PDF
d768 transistor Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442 Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent	Original	NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442	PDF
low noise, hetero junction fet Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent	Original	NE325S01 NE325S01 NE325S01-T1B NE325S01-T1 low noise, hetero junction fet NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325	PDF
PT 4207 Abstract: NE325S01 NE325S01-T1 NE325S01-T1B gm 572 Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz Noise Figure, NF dB	Original	NE325S01 NE325S01 NE325S01-T1 NE325S01-T1B 24-Hour PT 4207 NE325S01-T1 NE325S01-T1B gm 572	PDF
ne325 Abstract: small signal GaAs FET RF Transistor Selection ne324 Text: Small Signal GaAs FET Selection Graph Minimum Noise Figure, NF Min dB 2 NE332 1 NE324 NE325 1 4 2 6 8 10 12 16 20 30 Frequency, f (GHz) Gain, GA (dB) 20 NE325 10 NE324 NE332 NE760 NE761 1 2 4 6 8 10 12 16 20 30 Frequency, f (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR	Original	NE332 NE324 NE325 NE760 NE761 24-Hour ne325 small signal GaAs FET RF Transistor Selection ne324	PDF
low noise, hetero junction fet Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable	Original	NE32500, NE27200 NE32500 NE27200 NE32500 low noise, hetero junction fet high frequency transistor ga as fet s11 diode shottky nec, hetero junction transistor GA 88 KA 88	PDF
NE325S01-T1B Abstract: NE325S01 NE325S01-T1 Text: C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: ≤ 0.20 µm	Original	NE325S01 NE325S01 NE325S01-T1B NE325S01-T1	PDF
NE32500M Abstract: NE3250 ka band power fet NE32500 NE32500N nf 27 Text: NEC's C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE32500 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 µm • GATE LENGTH: LG = 0.20 µ	Original	NE32500 NE32500 24-Hour NE32500M NE3250 ka band power fet NE32500N nf 27	PDF
0.01pF Abstract: No abstract text available Text: NONLINEAR MODEL NE32584C SCHEMATIC see Page 2 FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -0.6723 RG 3 VTOSC RD 2 ALPHA 4 RS 2 BETA 0.115 RGMET GAMMA 0.08 KF GAMMADC 0.07 AF 1 Q 2 TNOM 27 DELTA 0.5 XTI 3 VBI 0.715 EG 1.43 IS 3e-13	Original	3e-13 5e-12 13e-12 3e-12 02e-12 NE32584C NE32584C 001pF 0.01pF	PDF
NE32584 Abstract: FET 3878 NE32584C NE32584C-S NE32584C-SL NE32584C-T1 162-7 MAG Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE	Original	NE32584C NE32584C NE32584C-S NE32584C-T1 NE32584C-SL 84C-SL 24-Hour NE32584 FET 3878 NE32584C-S NE32584C-SL NE32584C-T1 162-7 MAG	PDF
NE32584C-T1 Abstract: nec 3435 transistor am 4428 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.	OCR Scan	NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428	PDF
Untitled Abstract: No abstract text available Text: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES_ NE32500 OUTLINE DIMENSIONS Units in nm • S U P E R L O W N O IS E FIG U R E : 0.45 dB TYP at 12 GHz CHIP • H IG H A S S O C IA T E D G A IN : 12.5 dB TYP at 12 GHz	OCR Scan	NE32500 NE32500 IS12S21I 24-Hour	PDF
nec 8772 p Abstract: 5252 F 1120 nec 8772 cha 9935 ic an 17807 5252 F 1114 142.58 LD 7522 Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz • Lg < 0.20 ^m, WG = 200 \im	OCR Scan	NE32584C NE32584C NE32584C-S NE32584C-T1 24-Hour nec 8772 p 5252 F 1120 nec 8772 cha 9935 ic an 17807 5252 F 1114 142.58 LD 7522	PDF

6/18/ku 7831 Abstract: ku 7831 HA 13431 CD 14603 Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES_ NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: < 0.20 \|im	OCR Scan	NE325S01 NE325S01 Rn/50 NE325S01-T1 NE325S01-T1B 6/18/ku 7831 ku 7831 HA 13431 CD 14603	PDF
NE32484C-S Abstract: GA 88 ne32584c NE32584C-SL Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES_ NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I d s = 10 mA • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz	OCR Scan	NE32584C NE32584C IS12S21I 00Li545b NE32484C-S NE32484C-T1 NE32584C-SL 84C-SL b42752Â GA 88	PDF
ca 3161 e IC Abstract: No abstract text available Text: PRELIMINARY DATASHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz CO < <D • GATE LENGTH: < 0.20 jim	OCR Scan	NE325S01 NE325S01 NE325S01-T1 NE325S01-T1B 24-Hour ca 3161 e IC	PDF
1A12 nec Abstract: No abstract text available Text: \| \ \| E C C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES_ NE32500 OUTLINE DIMENSIONS Units in \|im • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: Lg = 0.20 nm	OCR Scan	NE32500 E32500 1A12 nec	PDF
ku 7831 Abstract: Ku BAND SUPER LOW NOISE type c ej 13431 9962 CH CD 14603 jd 1801 DS 8082 Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES_ • SUPER LOW NOISE FIGURE: 0.45dBTYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.5 dBTYP at 12 GHz XJ	OCR Scan	45dBTYP NE325S01 NE325S01 NE325S01-T1 NE325S01-T1B 24-Hour ku 7831 Ku BAND SUPER LOW NOISE type c ej 13431 9962 CH CD 14603 jd 1801 DS 8082	PDF
NE32484C-T1 Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 2 V, Ids = 10 m A • VERY LOW NOISE FIGURE: 0 .4 5 d B T y p ic a l at 12 G H z • HIGH A SSO CIATED GAIN: 1 2 .5 d B T y p ic a l at 12 G H z CO •	OCR Scan	NE32584C S12S21\| NE32584C E32484C NE32484C-T1 E32584C 84C-SL	PDF
nec a 634 Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS	OCR Scan	NE325S01 NE325S01 NE325S01-T1 nec a 634 Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable	OCR Scan	NE32500, NE27200 NE32500 NE27200 NE32500	PDF
NEC Ga FET Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS	OCR Scan	NE325S01 NE325S01 NE325S01-T1 NE325S01-T1B IR30-00 NEC Ga FET Nec K 872 AM/SSC 9500 ic data	PDF
NEC 82 A 0839 Abstract: NE27200 NE32500 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable	OCR Scan	NE32500, NE27200 NE32500 NE27200 NEC 82 A 0839	PDF

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NE325 Datasheets (21)

NE325 Datasheets Context Search

nec 8772

NE325S01

d768 transistor

low noise, hetero junction fet

PT 4207

ne325

low noise, hetero junction fet

NE325S01-T1B

NE32500M

0.01pF

NE32584

NE32584C-T1

Untitled

nec 8772 p

6/18/ku 7831

NE32484C-S

ca 3161 e IC

1A12 nec

ku 7831

NE32484C-T1

nec a 634

Untitled

NEC Ga FET

NEC 82 A 0839