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NE332 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
NE33200	NEC	SUPER LOW NOISE HJ FET	Original	PDF
NE33200	Unknown	FET Data Book	Scan	PDF
NE33200	NEC	SUPER LOW NOISE HJ FET	Scan	PDF
NE33200M	NEC	SUPER LOW NOISE HJ FET	Original	PDF
NE33200M	NEC	SUPER LOW NOISE HJ FET	Scan	PDF
NE33200N	NEC	SUPER LOW NOISE HJ FET	Original	PDF
NE33200N	NEC	SUPER LOW NOISE HJ FET	Scan	PDF
NE33284	NEC	L to x BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE33284A	NEC	Semiconductor Selection Guide	Original	PDF
NE33284A	NEC	SUPER LOW NOISE HJ FET	Original	PDF
NE33284A	NEC	L to x BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE33284A	Unknown	FET Data Book	Scan	PDF
NE33284AS	NEC	SUPER LOW NOISE HJ FET	Original	PDF
NE33284A-SL	NEC	Super low noise HJ FET.	Original	PDF

NE33284A-SL	NEC	L to x BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE33284A-T1	NEC	SUPER LOW NOISE HJ FET	Original	PDF
NE33284A-T1	NEC	L to x BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE33284A-T1A	NEC	L to x BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE33284A-T1B	NEC	N-channel heterojunction field-effect transistor	Original	PDF

NE332 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
nec k 813 Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent	Original	NE33284A NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A nec k 813 s11 diode shottky IEI1207 NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS	PDF
GM 90 562 573 Abstract: NE33200 NE33200M NE33200N Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to	Original	NE33200 NE33200 24-Hour GM 90 562 573 NE33200M NE33200N	PDF
NE33200 Abstract: NE33200M NE33200N Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to	Original	NE33200 NE33200 24-Hour NE33200M NE33200N	PDF
ne325 Abstract: small signal GaAs FET RF Transistor Selection ne324 Text: Small Signal GaAs FET Selection Graph Minimum Noise Figure, NF Min dB 2 NE332 1 NE324 NE325 1 4 2 6 8 10 12 16 20 30 Frequency, f (GHz) Gain, GA (dB) 20 NE325 10 NE324 NE332 NE760 NE761 1 2 4 6 8 10 12 16 20 30 Frequency, f (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR	Original	NE332 NE324 NE325 NE760 NE761 24-Hour ne325 small signal GaAs FET RF Transistor Selection ne324	PDF
Untitled Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to	Original	NE33200 NE33200 24-Hour	PDF
Untitled Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to	Original	NE33200 NE33200 24-Hour	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL NE33200 SCHEMATIC LG 0.19 RG CDG 0.16 0.04 GATE GGS 1E-5 RD 0.24 LD 0.2 DRAIN CGS 0.22 CDC 0.065 RDS g t f= 281GHz RI 0.52 CDS 0.05 RS 0.19 LS 0.03 SOURCE BIAS DEPENDENT MODEL PARAMETERS Parameters 2 V, 10 mA 2 V, 20 mA g 73 mS 96 mS t 2.5 pSec	Original	281GHz NE33200 24-Hour	PDF
LAMBDA rs SERIES Abstract: LAMBDA SEMICONDUCTORS 8E-14 Text: NONLINEAR MODEL SCHEMATIC LG 2 GATE LD 5 0.08 DRAIN 1 Q1 RD NE33200 R COMP 270 0.17 3 CRF X 10000 RS 1 LS 0.03 SOURCE FET NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters BETA 0.0989 CGD VTO -0.6 KF ALPHA 8 AF 1 LAMBDA 0.2 TNOM 27 THETA2 XTI 3 TAU 4e-12	Original	NE33200 4e-12 8e-14 05e-12 16e-12 24-Hour LAMBDA rs SERIES LAMBDA SEMICONDUCTORS	PDF
NE42484A Abstract: ne32584c NE33284A Text: Suggested Low Noise Amplifier Lineups 4 GHz Commercial LNA Performance 25°K LNA NE33284A NF dB GA (dB) 0.35 15.0 NE42484A 0.38 15.6 NE42484A 0.38 15.6 NF: 0.362 GA: 46.2 12 GHz Commercial LNA Performance 35°K LNA NE32584C NF (dB) GA (dB) 0.45 12.5 EXCLUSIVE NORTH AMERICAN AGENT FOR	Original	NE33284A NE42484A NE32584C 24-Hour NE42484A ne32584c NE33284A	PDF
NE33284AS Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536 Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:	Original	NE33284A 24-Hour NE33284AS NE33284A-SL NE33284A-T1 MODEL 536	PDF
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518	PDF
Nec 4558 c Abstract: NE33284A-SL NE33284AS 33284a Text: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA V ER Y LO W NO ISE FIG URE: 0.8 dB typical at 12 GHz HIG H A S S O C IA T E D G AIN : 10.5 dB Typical at 12 GHz m G A TE LE N G T H : 0.3 urn «	OCR Scan	NE33284A NE33284A NE33284AS NE33284A-T1 84ASL NE33284A-SL. Nec 4558 c NE33284A-SL 33284a	PDF
Untitled Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSO CIATED GAIN vs. FREQ UENCY V ds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASS O C IA TED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 \|im • GATE W ID TH : 280 nm	OCR Scan	NE33200 NE33200 NE33200N NE33200M lS22l	PDF
NE33284A-SL Abstract: NE33284AS Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids s 10 m A FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz m GATE LENGTH: 0.3 urn *o GATE WIDTH: 280 c LOW COST METAL/CERAMIC PACKAGE	OCR Scan	NE33284A NE33284A NE33284AS NE33284A-T1 84ASL NE33284A-SL. NE33284A-SL	PDF

NE67383 Abstract: No abstract text available Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> \|N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1	OCR Scan	NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383	PDF
NE33284A Abstract: NE33284A-SL NE33284AS Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm	OCR Scan	NE33284A NE33284A 24-Hour NE33284A-SL NE33284AS	PDF
NE33200 Abstract: LG 631 low noise, hetero junction fet NE33200M NE33200N sl2 357 sn 7441 Text: SUPER LOW NOISE HJ FET FEATURES NE33200 N O IS E F IG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y V ds = 2 V, I ds = 10 m A • V E R Y L O W N O IS E FIG U R E : 0 .7 5 dB typica l at 12 G H z • H IG H A S S O C IA T E D G A IN : 10.5 dB T ypica l at 12 G H z	OCR Scan	NE33200 NE33200 S12S21\| 24-Hour LG 631 low noise, hetero junction fet NE33200M NE33200N sl2 357 sn 7441	PDF
IC ATA 2398 Abstract: ata 2398 transistor D 2395 NE33284A te 2395 TRANSISTOR low noise FET NEC U TVR 681 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The N E33284A is a Herero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for GPS,	OCR Scan	NE33284A NE33284A IC ATA 2398 ata 2398 transistor D 2395 te 2395 TRANSISTOR low noise FET NEC U TVR 681	PDF
sn 7441 Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn	OCR Scan	NE33200 NE33200 IS2212 24-Hour sn 7441	PDF
sn 7441 Abstract: No abstract text available Text: NEC SUPER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0 75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 nm • GATE WIDTH: 280 \|j.m	OCR Scan	NE33200 NE33200 NE33200N NE33200M IS221 sn 7441	PDF
Untitled Abstract: No abstract text available Text: SU PER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vd s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz 4 - - -I- .1 1 - r 24 • HIGH ASSOCIATED GAIN:	OCR Scan	NE33200 NE33200 sur33200 NE33200N NE33200M 300nm IS12I IS22I2 IS12I	PDF
NE329 Abstract: No abstract text available Text: Low Noise GaAs FETs Typical Specifications @ Ta = 25°C Part \|j\| Hiigf g 8 NE24200 NE32400 NE33200 0.25 0.25 0.3 0.1 to 40 0.1 to 40 0.1 to 18 12 12 12 2.0 2.0 2.0 10 10 10 0.6 0.6 0.75 11.0 11.0 10.5 2.0 2.0 2.0 20 20 20 NE325S01 0.2 200 O.t to 14 12 2.0	OCR Scan	NE24200 NE32400 NE33200 NE325S01 NE334S01 NE34018 NE425S01 NE434S01 NE24283B NE32484A NE329	PDF
4558 Abstract: NE33284A-SL NE33284AS Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V , Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz 24 • HIG H ASSO C IA TED GAIN: 10.5 dB Typical at 12 GHz 21 m • GATE LENG TH : 0.3 \|im CD	OCR Scan	NE33284A NE33284A lS22l IS12S21I NE33284AS NE33284A-T1 84ASL NE33284A-SL. L427S25 4558 NE33284A-SL	PDF
NE32184A Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084 Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B	OCR Scan	NE345L-10B NE345L-20B NE20248 NE24200 NE24283A NE32084 4/12GBz NE76038 4/12GHz NE76184A NE32184A Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A	PDF

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NE332 Price and Stock

ITT Interconnect Solutions DPX3NE-33-23-F99

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Wall Industries Inc LANE3324NDH

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NE332 Datasheets (19)

NE332 Datasheets Context Search

nec k 813

GM 90 562 573

NE33200

ne325

Untitled

Untitled

Untitled

LAMBDA rs SERIES

NE42484A

NE33284AS

micro servo 9g

Nec 4558 c

Untitled

NE33284A-SL

NE67383

NE33284A

NE33200

IC ATA 2398

sn 7441

sn 7441

Untitled

NE329

4558

NE32184A