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    NE324 Price and Stock

    Microchip Technology Inc DSC1201NE3-24M57600

    MEMS OSC XO 24.5760MHZ CMOS SMD
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    DigiKey DSC1201NE3-24M57600 1
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    Mouser Electronics DSC1201NE3-24M57600
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    Microchip Technology Inc DSC1201NE3-24M57600 Tube 4 Weeks
    • 1 $1.23
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    NAC DSC1201NE3-24M57600 1
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    Microchip Technology Inc DSC1201NE3-24M57600T

    MEMS OSC, HIGH PERFORMANCE, 24.5
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    DigiKey DSC1201NE3-24M57600T 1
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    Mouser Electronics DSC1201NE3-24M57600T
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    Microchip Technology Inc DSC1201NE3-24M57600T Reel 4 Weeks
    • 1 $1.23
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    NAC DSC1201NE3-24M57600T 1
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    LUMEL SA BA391NE3240000

    Ammeter; on panel; I AC: 0÷800A; Class: 3; 300V; BA39; 96x96x64mm
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    TME BA391NE3240000 1
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    NEC Electronics Group NE32484A

    Electronic Component
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    ComSIT USA NE32484A 750
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    NE324 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32400 NEC Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA. Original PDF
    NE32400 NEC C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP Original PDF
    NE32400 Unknown FET Data Book Scan PDF
    NE32400M NEC Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA. Original PDF
    NE32400N NEC Ultra low noise pseudomorphic HJ FET. Original PDF
    NE32484A NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32484A NEC Semiconductor Selection Guide Original PDF
    NE32484A NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32484A NEC Semiconductor Selection Guide 1995 Original PDF
    NE32484A Unknown FET Data Book Scan PDF
    NE32484AS NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32484AS NEC Ultra low noise pseudomorphic HJ FET. Original PDF
    NE32484A-SL NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32484A-T1 NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32484A-T1A NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF

    NE324 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NE32400 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)4.0 V(BR)GSS (V)3.0 I(D) Max. (A)70m P(D) Max. (W)200m Maximum Operating Temp (øC)175 I(DSS) Min. (A)15m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		NE32400 PDF

    The Japanese Transistor Manual 1981

    Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		NE32484A NE32484A NE32484A-SL The Japanese Transistor Manual 1981 japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking PDF

    ne325

    Abstract: small signal GaAs FET RF Transistor Selection ne324
    Text: Small Signal GaAs FET Selection Graph Minimum Noise Figure, NF Min dB 2 NE332 1 NE324 NE325 1 4 2 6 8 10 12 16 20 30 Frequency, f (GHz) Gain, GA (dB) 20 NE325 10 NE324 NE332 NE760 NE761 1 2 4 6 8 10 12 16 20 30 Frequency, f (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR


    Original     		NE332 NE324 NE325 NE760 NE761 24-Hour ne325 small signal GaAs FET RF Transistor Selection ne324 PDF

    NE32484AS

    Abstract: NE32484A NE32484A-SL NE32484A-T1 FET 4812
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1 FET 4812 PDF

    NE32484A

    Abstract: NE32484AS NE32484A-SL NE32484A-T1 1S2118
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1 1S2118 PDF

    NE32484A

    Abstract: NE32484AS NE32484A-SL NE32484A-T1
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 1.2 21 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1 PDF

    NE32400

    Abstract: NE32400M NE32400N
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip


    Original     		NE32400 NE32400 24-Hour NE32400M NE32400N PDF

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 NE32400 transistor NEC 882 p NE24200
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		NE32400, NE24200 NE32400 NE24200 NE32400 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 transistor NEC 882 p PDF

    ne324

    Abstract: NE32400
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip


    Original     		NE32400 NE32400 24-Hour ne324 PDF

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 GHz m • LG = 0.25 urn, Wg = 200 |im


    OCR Scan     		NE32400 NE32400 str11 IS12I lS22l PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim


    OCR Scan     		NE32400 NE32400 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES N O IS E FIG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y V d s = 2 V , Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSO CIATED GAIN: G a = 11.0 dB typical at f = 12 GHz


    OCR Scan     		NE32400 NE32400 PDF

    GLDS

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0 .6 dB typical at 12 G H z 24 • HIGH ASSOCIATED GAIN: 21 11 dB typical at 12 G H z • L g = 0.25 nm, W g = 200 nm


    OCR Scan     		NE32484A resul83 IS12I IS22I2 IS12S21I NE32484AS NE32484A-T1 NE32484A-SL. GLDS PDF

    NEC 2705 L 107

    Abstract: IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The N E32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		NE32484A E32484A NEC 2705 L 107 IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION N E 3 2 4 0 0 and N E 2 4 2 0 0 a re H e te ro J u n c tio n F ET ch ip th a t u tiliz e s th e h e tero ju n c tio n be tw e e n S i-d o p e d A IG a A s


    OCR Scan     		NE32400, NE24200 PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I d s = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz • Lg = 0.25 jam, W g = 200 irn


    OCR Scan     		NE32484A TheNE32484Ais NE32484AS E32484A-T1 NE32484A-SL. 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, I d s = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 21 L g = 0.25 jim , W g = 200 |im


    OCR Scan     		NE32484A NE32484A NE32484AS NE32484A-T1 NE32484A-SL. PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m T3 • Lg = 0.25 |im, W q = 200 |im


    OCR Scan     		NE32484A E32484Ais IS12I IS12S21I NE32484AS NE32484A-T1 NE32484A-SL. PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high m obility electrons. Its excellent low noise and high associated gain make it suitable


    OCR Scan     		NE32400, NE24200 NE32400 NE24200 NE32400 PDF

    NE329

    Abstract: No abstract text available
    Text: Low Noise GaAs FETs Typical Specifications @ Ta = 25°C Part |j| Hiigf g 8 NE24200 NE32400 NE33200 0.25 0.25 0.3 0.1 to 40 0.1 to 40 0.1 to 18 12 12 12 2.0 2.0 2.0 10 10 10 0.6 0.6 0.75 11.0 11.0 10.5 2.0 2.0 2.0 20 20 20 NE325S01 0.2 200 O.t to 14 12 2.0


    OCR Scan     		NE24200 NE32400 NE33200 NE325S01 NE334S01 NE34018 NE425S01 NE434S01 NE24283B NE32484A NE329 PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 |im, Wg = 200 urn


    OCR Scan     		NE32484A E32484A NE32484AS NE32484A-T1 NE32484A-SL. L427525 PDF

    NE32184A

    Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
    Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B


    OCR Scan     		NE345L-10B NE345L-20B NE20248 NE24200 NE24283A NE32084 4/12GBz NE76038 4/12GHz NE76184A NE32184A Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF