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    NEC TRANSISTORS Search Results

    NEC TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NEC TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    isp1161* Embedded Programming

    Abstract: V832 ISP1161 ISP1161A1 NECV832-02 SH7709 uPD705102 operation of 8237 programmable direct memory access ericsson isp116x ISP116x
    Text: AN10018 Interfacing ISP1161A1 to NEC V832 processor Rev. 04 — 12 October 2009 Application note Document information Info Content Keywords isp1161; isp1161a1; host controller; usb; universal serial bus Abstract This application note describes interfacing the ISP1161A1 to the NEC


    Original     		PDF AN10018 ISP1161A1 isp1161; isp1161a1; ISP1161 ISP1161A1 AN10018 isp1161* Embedded Programming V832 NECV832-02 SH7709 uPD705102 operation of 8237 programmable direct memory access ericsson isp116x ISP116x

    PA101B

    Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
    Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PDF PA101 PA102 PA103 PA104 P10944EJ2V0AN00 PA101B PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00

    uPD654

    Abstract: L302 OPENCAD CMOS Block library
    Text: EA-C9 3.3-Volt, 0.35-Micron drawn CMOS Embedded Array NEC Electronics Inc. Preliminary March 1997 Description Figure 1. Embedded Array Core Integration NEC’s high-performance 0.35 µm drawn (0.27 µm L-effective) EA-C9 embedded array family offers both


    Original     		PDF 35-Micron A12633EU1V0DS00 uPD654 L302 OPENCAD CMOS Block library

    NEC 10F

    Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
    Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.


    OCR Scan     		PDF devic87 P12647EJ3V0PF00 NEC 10F low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book

    2SC2558

    Abstract: 2SC2558K 2SC2559K ne0800 2SC2850K 2SC2850 2SC2559 bM274m NE080190 NE080490
    Text: NEC/ NEC b M 2 7 4 m GQOESa6! ÔTS » N E C C 5bE D CALIFORNIA CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC’s NE0800 series of NPN epitaxial UHF power transistors


    OCR Scan     		PDF bM274m NE0800-12 NE0800 DG0E54E NE0801 NE0804 NE0810 NE080190 2SC2558 2SC2558K 2SC2559K 2SC2850K 2SC2850 2SC2559 NE080490

    uPD95

    Abstract: nec 2561 equivalent transistor tba 222 SH NEC 2561 NEC open cad pwc NEC 2561* D 431
    Text: NEC NEC Electronics Inc. CB-C8 0.5-Micron CMOS Cell-Based ASIC Design Manual March 1995 Document No. 70226-1 1995 NEC Electronics lnc./Printed in U.S.A. • b427525 ÜGÔ3304 bT3 ■ ft CONTENTS CHAPTER 1 GENERAL DESCRIPTION.


    OCR Scan     		PDF b427525 uPD95 nec 2561 equivalent transistor tba 222 SH NEC 2561 NEC open cad pwc NEC 2561* D 431

    Untitled

    Abstract: No abstract text available
    Text: NEC 3.3-V olt, 0.44-M icron G ate Arrays NEC Electronics Inc. Prelim inary April 1996 Figure 1. 672-pin BGA Description NEC’s 3.3-volt QB-8 fam ily consists of ultra-highperform ance, subm icron gate arrays targeted for applications requiring high speeds and low power


    OCR Scan     		PDF 672-pin

    NEC uPA101G

    Abstract: UPA101B UPA101G
    Text: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY


    OCR Scan     		PDF b4274m G002575 UPA101B UPA101G UPA101B: 14-pin UPA101G: NEC uPA101G UPA101B UPA101G

    transistor f422 equivalent

    Abstract: transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641
    Text: NEC CB-C9 Family Design Manual June 1996 Document No. A10927EU1V0UM00 Copyright 1996 NEC Electronics Inc. All Rights Reserved b 4 Ë 75 E 5 0063Û Û1 7 b l NEC CB-C9 Family Design Manual Document Number A10927EU1V0UM00 Revision History Preliminary Release On-Line - June 1996


    OCR Scan     		PDF A10927EU1V0UM00 A11040XEU1V0UM00 b427525 G064122 transistor f422 equivalent transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641

    81E TRANSISTOR

    Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
    Text: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power


    OCR Scan     		PDF b427414 0002SS2 NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 NEM0800 NEM080481E-12 NEM081081E-12 81E TRANSISTOR 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. Description //P C 4 55 8 DUAL HIGH-PERFORMANCE OPERATIONAL AM PLIFIER Pin Configuration The ¿ PC4558 is a dual operational am plifier with internal frequency compensation. Using low noise lateral PNP input transistors on the am plifier inputs


    OCR Scan     		PDF PC4558 RC4558 3-002157A

    d 65632

    Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
    Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products


    OCR Scan     		PDF

    uPD65801

    Abstract: uPD65800 UPD65804
    Text: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device


    OCR Scan     		PDF H27SSS uPD65801 uPD65800 UPD65804

    HPD711

    Abstract: 3.5795MHz PD71101
    Text: NEC APPLICA T/ON NOTE LOW-VOLTAGE OPERATION DRAM Document No. NEC Corporation 1996 M 1 1411E J2V 0A N 00 2nd edition Date Published July 1996 P Printed in Japan V805, V810, and V810 Family are tradem arks o f NEC Corporation. VGA is a tradem ark o f International Business Machines Corporation.


    OCR Scan     		PDF 1411E HPD711 3.5795MHz PD71101

    2SA1224

    Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
    Text: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­


    OCR Scan     		PDF 00GS512 NE90100 NE90115 NE74014 NE901 NE90115 2SA1224 NEC JAPAN 3167 1S955 NE74014

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135

    2SA1424

    Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
    Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and


    OCR Scan     		PDF b427414 NE88900 NE88912 NE88933 NE88935 NE327 NE889 NE88900) NE88935 2SA1424 2SA1228 G503 NE327 NE AND micro-X 2SA1223

    PD71101

    Abstract: kc114 HPD711
    Text: NEC NEC Corporation 1996 Document No. M11411EJ2V0AN00 2nd edition Date Published July 1996 P Printed m Japan V805, V810, and V810 Family are tradem arks o f NEC Corporation. VGA is a tradem ark o f International Business Machines Corporation. The application circuits and their parameters are for reference only and are not intended for use in actuai design-ins.


    OCR Scan     		PDF M11411EJ2V0AN00 PD71101 kc114 HPD711

    NEC 41-A 002

    Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
    Text: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for


    OCR Scan     		PDF b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353

    2SC4091

    Abstract: 2SC4088 NE68339 NE68339B
    Text: NEC/ CALIFORNIA 5bE D NEC • b M 2 ? m 4 0D05MS2 345 BINECC r-3 \ - i £ NPN SILICON HIGH FREQUENCY TRANSISTOR NE68339 NE68339B FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE The NE68339 and NE68339B are NPN silicon high frequency transistors designed primarily for use in low voltage and low


    OCR Scan     		PDF 0D05MS2 NE68339 NE68339B 2SC4091 2SC4088 NE68339B

    65630

    Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
    Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		PDF IEU-7922, IP-8090 65630 RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442