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    RJP60D0DPK Search Results

    RJP60D0DPK Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJP60D0DPK-00#T0 Renesas Electronics Corporation IGBT for Inverter Applications, TO-3P, / Visit Renesas Electronics Corporation
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    RJP60D0DPK Price and Stock

    Renesas Electronics Corporation RJP60D0DPK-00-T0

    IGBT 600V 45A TO3P
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    DigiKey RJP60D0DPK-00-T0 Tube
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    Rochester Electronics LLC RJP60D0DPK-01-T0

    RJH60D0 - INSULATED GATE BIPOLAR
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    DigiKey RJP60D0DPK-01-T0 Bulk 135
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    Renesas Electronics Corporation RJP60D0DPK-01#T0

    RJH60D0 - Insulated Gate Bipolar Transistor '
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    Rochester Electronics RJP60D0DPK-01#T0 1,052 1
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    • 1000 $1.83
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    RJP60D0DPK Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJP60D0DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-3P Original PDF

    RJP60D0DPK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjp60d

    Abstract: RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA
    Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPK R07DS0166EJ0100 PRSS0004ZE-A temperature9044 rjp60d RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA

    rjp60d

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPK R07DS0166EJ0200 PRSS0004ZE-A

    rjp60d

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPK R07DS0166EJ0300 PRSS0004ZE-A rjp60d

    RJH60F7

    Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
    Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units


    Original     		PDF RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram