8ETL06
Abstract: No abstract text available
Text: PD - 20989 FD100T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD100T06A5B
150ns
8ETL06
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Untitled
Abstract: No abstract text available
Text: I - 0519J revB FD087H02A5B FRED Die in Wafer Form z z 200V VF = 0.975V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0519J
FD087H02A5B
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Untitled
Abstract: No abstract text available
Text: PD - 20988 rev. A FD120W06A5B FRED Die in Wafer Form z z 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120W06A5B
350nC
60due
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Untitled
Abstract: No abstract text available
Text: PD - 20987 rev. A FD120T06A5B FRED Die in Wafer Form z z 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120T06A5B
190ns
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Untitled
Abstract: No abstract text available
Text: I - 0514J rev.C FD075H06A5B FRED Die in Wafer Form z z 600V VF = 2.4V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0514J
FD075H06A5B
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Untitled
Abstract: No abstract text available
Text: PD - 20987 FD120T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel, Chip Pack, and Sawn on Film " (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120T06A5B
190ns
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Untitled
Abstract: No abstract text available
Text: I - 0517J rev. B FD100U06A5B FRED Die in Wafer Form z 600V VF = 1.25V typ. 5" Wafer 100% Tested at Probe c Electrical Characteristics Parameter VFM VFM VRRM IRM trr Description Typical Forward Voltage Typical Forward Voltage Minimum Reverse Breakdown Voltage
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0517J
FD100U06A5B
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Untitled
Abstract: No abstract text available
Text: I - 0517J rev. A FD100U06A5B FRED Die in Wafer Form z 600V VF = 1.25V typ. 5" Wafer 100% Tested at Probe c Electrical Characteristics Parameter VFM VFM VRRM IRM trr Description Typical Forward Voltage Typical Forward Voltage Minimum Reverse Breakdown Voltage
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0517J
FD100U06A5B
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FD059
Abstract: No abstract text available
Text: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0513J
FD059U06A5B
FD059
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8ETU04
Abstract: No abstract text available
Text: I - 0523J rev.A FD090U04A5B FRED Die in Wafer Form z z 400V VF = 1.3V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0523J
FD090U04A5B
8ETU04
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Untitled
Abstract: No abstract text available
Text: PD - 20533 revE FD160H06A5B FRED Die in Wafer Form z z 600V VF = 2.6 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD160H06A5B
345nC
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Untitled
Abstract: No abstract text available
Text: Bulletin I0167J 02/05 FD150U06A5B FRED Die in Wafer Form z z 600V VF = 1.9 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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I0167J
FD150U06A5B
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FD046H02A5F
Abstract: No abstract text available
Text: I - 0520J rev.A FD046H02A5B FRED Die in Wafer Form z z 200V VF = 1.0V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0520J
FD046H02A5B
FD046H02A5F
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FD100H06A5B
Abstract: FD100H06A5F 8ETH06 FD100H06A5P FD100H06A5R MIL-HDBK-263 S1025
Text: PD - 20201 rev.C FD100H06A5B FRED Die in Wafer Form z z 600V VF = 2.4 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD100H06A5B
220nC
12-Mar-07
FD100H06A5B
FD100H06A5F
8ETH06
FD100H06A5P
FD100H06A5R
MIL-HDBK-263
S1025
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FD122H02A5B
Abstract: FD122H02A5F FD122H02A5P MIL-HDBK-263 MUR3020WT S1025
Text: I - 0518J rev.B FD122H02A5B FRED Die in Wafer Form z z 200V VF = 1.05 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0518J
FD122H02A5B
12-Mar-07
FD122H02A5B
FD122H02A5F
FD122H02A5P
MIL-HDBK-263
MUR3020WT
S1025
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FD059U06A5B
Abstract: fd059u06 MIL-HDBK-263 S1025 FD059
Text: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0513J
FD059U06A5B
12-Mar-07
FD059U06A5B
fd059u06
MIL-HDBK-263
S1025
FD059
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FD160H03A5R
Abstract: 30EPH03 FD160H03A5B FD160H03A5F FD160H03A5P MIL-HDBK-263 S1025
Text: PD - 20993 rev.B FD160H03A5B FRED Die in Wafer Form z z 300V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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FD160H03A5B
12-Mar-07
FD160H03A5R
30EPH03
FD160H03A5B
FD160H03A5F
FD160H03A5P
MIL-HDBK-263
S1025
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FD160S04A5B
Abstract: FD160S04A5P MIL-HDBK-263 S1025 UFB60FA40
Text: I - 0525J rev.A FD160S04A5B FRED Die in Wafer Form z z 400V VF = 1.39V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0525J
FD160S04A5B
12-Mar-07
FD160S04A5B
FD160S04A5P
MIL-HDBK-263
S1025
UFB60FA40
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MIL-HDBK-263
Abstract: S1025
Text: Bulletin I0164J 09/04 FD100N06A5B FRED Die in Wafer Form z 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe (*) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VFM VFM VRRM IRM Description Maximum Forward Voltage Maximum Forward Voltage
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I0164J
FD100N06A5B
12-Mar-07
MIL-HDBK-263
S1025
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S1025 equivalent
Abstract: No abstract text available
Text: Bulletin I - 0165J rev. A 12/05 FD075T06A5B FRED Die in Wafer Form z z 600V VF = 0.95V typ. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VFM VRRM IRM trr
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0165J
FD075T06A5B
S1025 equivalent
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Untitled
Abstract: No abstract text available
Text: Bulletin I0533J 12/05 FD080H02A5F FRED Die in Wafer Form z z z 200V VF = 0.9V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics (@ TJ = 25°C) Parameter VFM VFM VFM VRRM
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I0533J
FD080H02A5F
25life.
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MIL-HDBK-263
Abstract: S1025
Text: Bulletin I - 0165J rev. A 12/05 FD075T06A5B FRED Die in Wafer Form z z 600V VF = 0.95V typ. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VFM VRRM IRM trr
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0165J
FD075T06A5B
100Aability,
12-Mar-07
MIL-HDBK-263
S1025
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FD100T06A5B
Abstract: 8ETL06 MIL-HDBK-263 S1025 for IR hexfet die
Text: PD - 20989 rev.A FD100T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD100T06A5B
150ns
12-Mar-07
FD100T06A5B
8ETL06
MIL-HDBK-263
S1025
for IR hexfet die
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FD120W06A5B
Abstract: for IR hexfet die 15ETX06 MIL-HDBK-263 S1025 FD120W06A5
Text: PD - 20988 rev. B FD120W06A5B FRED Die in Wafer Form z z 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter
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FD120W06A5B
350nC
12-Mar-07
FD120W06A5B
for IR hexfet die
15ETX06
MIL-HDBK-263
S1025
FD120W06A5
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