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    S1025 EQUIVALENT Search Results

    S1025 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    S1025 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8ETL06

    Abstract: No abstract text available
    Text: PD - 20989 FD100T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter


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    PDF FD100T06A5B 150ns 8ETL06

    Untitled

    Abstract: No abstract text available
    Text: I - 0519J revB FD087H02A5B FRED Die in Wafer Form z z 200V VF = 0.975V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF 0519J FD087H02A5B

    Untitled

    Abstract: No abstract text available
    Text: PD - 20988 rev. A FD120W06A5B FRED Die in Wafer Form z z 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter


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    PDF FD120W06A5B 350nC 60due

    Untitled

    Abstract: No abstract text available
    Text: PD - 20987 rev. A FD120T06A5B FRED Die in Wafer Form z z 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter


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    PDF FD120T06A5B 190ns

    Untitled

    Abstract: No abstract text available
    Text: I - 0514J rev.C FD075H06A5B FRED Die in Wafer Form z z 600V VF = 2.4V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF 0514J FD075H06A5B

    Untitled

    Abstract: No abstract text available
    Text: PD - 20987 FD120T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel, Chip Pack, and Sawn on Film " (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter


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    PDF FD120T06A5B 190ns

    Untitled

    Abstract: No abstract text available
    Text: I - 0517J rev. B FD100U06A5B FRED Die in Wafer Form z 600V VF = 1.25V typ. 5" Wafer 100% Tested at Probe c Electrical Characteristics Parameter VFM VFM VRRM IRM trr Description Typical Forward Voltage Typical Forward Voltage Minimum Reverse Breakdown Voltage


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    PDF 0517J FD100U06A5B

    Untitled

    Abstract: No abstract text available
    Text: I - 0517J rev. A FD100U06A5B FRED Die in Wafer Form z 600V VF = 1.25V typ. 5" Wafer 100% Tested at Probe c Electrical Characteristics Parameter VFM VFM VRRM IRM trr Description Typical Forward Voltage Typical Forward Voltage Minimum Reverse Breakdown Voltage


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    PDF 0517J FD100U06A5B

    FD059

    Abstract: No abstract text available
    Text: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF 0513J FD059U06A5B FD059

    8ETU04

    Abstract: No abstract text available
    Text: I - 0523J rev.A FD090U04A5B FRED Die in Wafer Form z z 400V VF = 1.3V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF 0523J FD090U04A5B 8ETU04

    Untitled

    Abstract: No abstract text available
    Text: PD - 20533 revE FD160H06A5B FRED Die in Wafer Form z z 600V VF = 2.6 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter


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    PDF FD160H06A5B 345nC

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I0167J 02/05 FD150U06A5B FRED Die in Wafer Form z z 600V VF = 1.9 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified)


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    PDF I0167J FD150U06A5B

    FD046H02A5F

    Abstract: No abstract text available
    Text: I - 0520J rev.A FD046H02A5B FRED Die in Wafer Form z z 200V VF = 1.0V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF 0520J FD046H02A5B FD046H02A5F

    FD100H06A5B

    Abstract: FD100H06A5F 8ETH06 FD100H06A5P FD100H06A5R MIL-HDBK-263 S1025
    Text: PD - 20201 rev.C FD100H06A5B FRED Die in Wafer Form z z 600V VF = 2.4 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter


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    PDF FD100H06A5B 220nC 12-Mar-07 FD100H06A5B FD100H06A5F 8ETH06 FD100H06A5P FD100H06A5R MIL-HDBK-263 S1025

    FD122H02A5B

    Abstract: FD122H02A5F FD122H02A5P MIL-HDBK-263 MUR3020WT S1025
    Text: I - 0518J rev.B FD122H02A5B FRED Die in Wafer Form z z 200V VF = 1.05 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF 0518J FD122H02A5B 12-Mar-07 FD122H02A5B FD122H02A5F FD122H02A5P MIL-HDBK-263 MUR3020WT S1025

    FD059U06A5B

    Abstract: fd059u06 MIL-HDBK-263 S1025 FD059
    Text: I - 0513J rev.B FD059U06A5B FRED Die in Wafer Form z z 600V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF 0513J FD059U06A5B 12-Mar-07 FD059U06A5B fd059u06 MIL-HDBK-263 S1025 FD059

    FD160H03A5R

    Abstract: 30EPH03 FD160H03A5B FD160H03A5F FD160H03A5P MIL-HDBK-263 S1025
    Text: PD - 20993 rev.B FD160H03A5B FRED Die in Wafer Form z z 300V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF FD160H03A5B 12-Mar-07 FD160H03A5R 30EPH03 FD160H03A5B FD160H03A5F FD160H03A5P MIL-HDBK-263 S1025

    FD160S04A5B

    Abstract: FD160S04A5P MIL-HDBK-263 S1025 UFB60FA40
    Text: I - 0525J rev.A FD160S04A5B FRED Die in Wafer Form z z 400V VF = 1.39V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage


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    PDF 0525J FD160S04A5B 12-Mar-07 FD160S04A5B FD160S04A5P MIL-HDBK-263 S1025 UFB60FA40

    MIL-HDBK-263

    Abstract: S1025
    Text: Bulletin I0164J 09/04 FD100N06A5B FRED Die in Wafer Form z 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe (*) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VFM VFM VRRM IRM Description Maximum Forward Voltage Maximum Forward Voltage


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    PDF I0164J FD100N06A5B 12-Mar-07 MIL-HDBK-263 S1025

    S1025 equivalent

    Abstract: No abstract text available
    Text: Bulletin I - 0165J rev. A 12/05 FD075T06A5B FRED Die in Wafer Form z z 600V VF = 0.95V typ. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VFM VRRM IRM trr


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    PDF 0165J FD075T06A5B S1025 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I0533J 12/05 FD080H02A5F FRED Die in Wafer Form z z z 200V VF = 0.9V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics (@ TJ = 25°C) Parameter VFM VFM VFM VRRM


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    PDF I0533J FD080H02A5F 25life.

    MIL-HDBK-263

    Abstract: S1025
    Text: Bulletin I - 0165J rev. A 12/05 FD075T06A5B FRED Die in Wafer Form z z 600V VF = 0.95V typ. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VFM VRRM IRM trr


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    PDF 0165J FD075T06A5B 100Aability, 12-Mar-07 MIL-HDBK-263 S1025

    FD100T06A5B

    Abstract: 8ETL06 MIL-HDBK-263 S1025 for IR hexfet die
    Text: PD - 20989 rev.A FD100T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter


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    PDF FD100T06A5B 150ns 12-Mar-07 FD100T06A5B 8ETL06 MIL-HDBK-263 S1025 for IR hexfet die

    FD120W06A5B

    Abstract: for IR hexfet die 15ETX06 MIL-HDBK-263 S1025 FD120W06A5
    Text: PD - 20988 rev. B FD120W06A5B FRED Die in Wafer Form z z 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter


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    PDF FD120W06A5B 350nC 12-Mar-07 FD120W06A5B for IR hexfet die 15ETX06 MIL-HDBK-263 S1025 FD120W06A5