Untitled
Abstract: No abstract text available
Text: f Z 7 SGS-THOMSON TECHNICAL NOTE AN INTRODUCTION TO POWER MOS A POWER MOS transistor is a power transistor pro duced with MOS, and not the usual bipolar tech nology. Special characteristics are high switching speeds and easy driving. This introductory note describes
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Untitled
Abstract: No abstract text available
Text: rz T SGS-THOMSON *•7#. ¡»mmgsraraofss TECHNICAL NOTE AN INTRODUCTION TO POWER MOS A POWER MOS transistor is a power transistor pro duced with MOS, and not the usual bipolar tech nology. Special characteristics are high switching speeds and easy driving. This introductory note describes
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VDMOS
Abstract: VDMOS DEVICE
Text: /T T SGS-THOMSON ^ 7 Ê R Æ O iS ^ O ilL tlÊ iri^ lS ^ D Ê S TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech nology represents the final evolution of the deve lopment of a process to obtain POWER MOS
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S-8471
VDMOS
VDMOS DEVICE
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VDMOS DEVICE
Abstract: No abstract text available
Text: S G S -T H O M S O N itLKSTTMIiÎODÊS TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech nology represents the final evolution of the deve lopment of a process to obtain POWER MOS devices, started in SGS in 1977.
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S-8471
VDMOS DEVICE
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SGS-ATES l120
Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Text: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the
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D100E
Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
Text: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same
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SGSP321,
SGSP352
BUV48,
BU508A
SGSD00035
SGSD00039
SGSD00031,
BU810
D100E
ic uc3842
BUV48 SE
sgsd00031
uc3842 application 600V
BU508
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BUV48 SE
Abstract: SGSD00036 kkz 10
Text: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous
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SGS30MA050D1
250fi
SGS30M
SGS40TA045D:
SGS400T045D
O-24Q
BUV48 SE
SGSD00036
kkz 10
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u810 diode
Abstract: diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508 BU810
Text: SGS-THOMSON 5 7 ,. APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi gation carried out on power devices with both MOS and BIPOLAR parts working together in the same circuit. The “ emitter drive” configuration was con
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SGSP321,
SGSP352
BUV48,
BU508A
SGSD00035
SGSD00039
SGSD00031,
BU810
u810 diode
diode u810
flyback uc3842 power supply
BUV48 SE
u810
sgsd00031
SGSP321
BU508
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TSD5MG40V
Abstract: STHV102 TSD5MG40F sthv QG30S
Text: 30E D • 71S1SB7 DQ3058b H T '- S f i- lS SGS-THOMSON s s . CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON N TYPE V dss Ros on Id TSD5MG40F/V 1000 V 0.7 n 17 A ■ . ■ ■ ■ ■ . « TSD5MG40F TSD5MG40V HIGH CURRENT POWER MOS MODULE
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TSD5MG40F
TSD5MG40V
TSD5MG40F/V
STHV102
TSD5MG40V
T-91-20
O-240)
TSD5MG40F
sthv
QG30S
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SD 1496 transistor
Abstract: TSD2M350F
Text: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE
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QG3D534
TSD2M350F
TSD2M350V
TSD2M350F/V
T-91-20
O-240)
PC-029«
SD 1496 transistor
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5358A
Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Text: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE
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Q0305Sb
251F/V
TSD4M251F
TSD4M251V
STH33N20FI
T-91-20
O-240)
PC-029«
5358A
d 317 transistor
TSD4M251V
SP 358 s
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schematic diagram UPS
Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Text: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS
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TSD180N1
TSD180N1OV
TSD180N10F/V
C045S0
T-91-20
O-240)
schematic diagram UPS
TSD180N10V
k 815 MOSFET
smps&ups
TSD180N10F
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TSD4M350V
Abstract: T397 TSD4M350F IRFP350 L072A
Text: 3QE T> m 7^5^537 00305b5_l • SGS-THOMSON i L[iOT(s*S s g N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON TY P E V d ss RDS(on Id TS D 4M 350F /V 400 V 0.075 n 50 A . . . ■ ■ . « . TSD4M350F TSD4M350V HIGH CURRENT POWER MOS MODULE
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TSD4M350F
TSD4M350V
TSD4M350F/V
IRFP350
TSD4M350V
t-91-20
O-240)
T397
TSD4M350F
L072A
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400v p - CHANNEL mos
Abstract: STH9N50D
Text: SGS-THOMSON STH9N50D M N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE STH9N50D V dss RDS on Id 500 V 0.85 a 9 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE
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STH9N50D
O-218
400v p - CHANNEL mos
STH9N50D
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STK2N50
Abstract: No abstract text available
Text: SGS-THOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N 50 ' V dss R d s oii Id 500 V 6 Ü 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION
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STK2N50
OT-82
OT-194
STK2N50
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Untitled
Abstract: No abstract text available
Text: 3QE D • 7 ^ 5 3 7 QQ3074Q T ■ £Z7 SGS-THOMSON Ä 7# [* ^ « [IO T a [* S IR F K 4 H 4 5 0 s g s - thomson" N - CHANNEL ENHANCEMENT MODE -POWER MOS TRANSISTOR MODULE TYPE IRFK4H450 V d ss RDS(on) Id 500 V 0.1 n 44 A ■ . « . HIGH CURRENT POWER MOS MODULE
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3074Q
IRFK4H450
T-91-20
O-240)
PC-029«
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TSD4M450V
Abstract: tsd4m450 TSD4M450F
Text: 3PE c ï s g » • 7^5*1537 Q D3 Q5 74 SGS-THOMSON id O T * ! ï N TYPE V dss RDS on lo 500 V 0.1 £2 45 A ■ . ■ ■ TSD4M450F TSD4M450V _ CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON TSD4M450F/V ■ ■ ■ ■ ÔJB HIGH CURRENT POWER MOS MODULE
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TSD4M450F
TSD4M450V
TSD4M450F/V
IRFP450
TSD4M450V
TSD4M450F
T-91-20
O-240)
PC-029«
tsd4m450
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TSD2M450V
Abstract: TSD2M450F TSD2M450
Text: 30E S G S-THOMSON Q03GS3b D SGS-THOMSON X - 3 ° \- \5 iy D TSD2M450F TSD2M450V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE A D VANC E DATA TYPE V d ss RDS on Id T S D 2 M 4 5 0 F /V 500 V 0 .2 n 26 A . . . • HIGH CURRENT POWER MOS MODULE
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Q03GS3b
TSD2M450F
TSD2M450V
O-240)
PC-029«
TSD2M450V
TSD2M450
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON [MOigœilLiera *® STP53N08 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss R dS oii Id STP53N 08 80 V < 0.024 Û. 53 A . TYPICAL Ros(on) =0.018 £1 . A VALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED
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STP53N08
STP53N
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:
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BUZ11A
156x156
C-0071.
19source
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5460a
Abstract: STV50N05 D073
Text: / I T SGS-THOMSON ^7# IRülOOTSIILIlCTIBSllülOGS STV50N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R D S on lo STV50N05 50 V < 0.028 ß 50 A • . . . . . . . TYPICAL RDS(on) = 0.022 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STV50N05
STV50N05
0068039-C
5460a
D073
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Untitled
Abstract: No abstract text available
Text: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STB5NA80
O-262)
O-263)
O-263
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GC2269
Abstract: No abstract text available
Text: SGS-THOMSON STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 50XI . . • . . V dss RoS on Id 500 V 4 il 1,7 A AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLICATION O RIENTED CHARACTERIZATION
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STP3N50XI
ISOWATT221
GC22690
GC2269
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10n50d
Abstract: STH10N50
Text: SGS-THOMSON STH10N50D EO N - CHANNEL ENHANCEMENT MODE FREDFET PRELIMINARY DATA TYPE STH 10N 50D V dss RDS on Id 500 V 0 .6 5 il 10 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE CONFIGURATION
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STH10N50D
SC06020
10n50d
STH10N50
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