Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR770DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si3453DV
11-Mar-11
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sir882a
Abstract: No abstract text available
Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR882ADP
11-Mar-11
sir882a
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S12-1319
Abstract: No abstract text available
Text: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7820DN
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S12-1319
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PDF
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Si7625DN
Abstract: mosfet 4430 si7625 S10-2503
Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7625DN
S10-2503-Rev.
01-Nov-10
mosfet 4430
si7625
S10-2503
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ730DT
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ790DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ790DT
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si1012CR
11-Mar-11
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s1124
Abstract: No abstract text available
Text: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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Si5999EDU
11-Mar-11
s1124
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiS698DN
11-Mar-11
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62630
Abstract: No abstract text available
Text: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA920DJ
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
62630
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PDF
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SIR876
Abstract: No abstract text available
Text: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR876ADP
11-Mar-11
SIR876
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7093
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range
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SUP/SUB75N08-10
7093
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mosfet 2891
Abstract: No abstract text available
Text: SPICE Device Model Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8499DB
18-Jul-08
mosfet 2891
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SiA447DJ
Abstract: No abstract text available
Text: SPICE Device Model SiA447DJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the P-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiA447DJ
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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S10-1617
Abstract: No abstract text available
Text: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4004DY
18-Jul-08
S10-1617
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR774DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR774DP
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7629DN
18-Jul-08
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67125
Abstract: No abstract text available
Text: SPICE Device Model Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4200DY
18-Jul-08
67125
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ710DT
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si1902CDL www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si1902CDL
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Si2329DS
Abstract: si2329 si23
Text: SPICE Device Model Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si2329DS
11-Mar-11
si2329
si23
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63935
Abstract: No abstract text available
Text: SPICE Device Model SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiRA14DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
63935
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PDF
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Si4401DDY
Abstract: No abstract text available
Text: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4401DDY
18-Jul-08
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